Investigation of defect creation in GaP/Si(0 0 1) epitaxial structures

Engineering & Materials Science

• Molecular beam epitaxy 100%
• Defects 44%
• Epitaxial films 32%
• Defect density 30%
• Diffraction patterns 30%
• Epitaxial growth 30%
• Phase boundaries 29%
• Crystallinity 26%
• Electrons 21%
• X ray diffraction 21%
• Relaxation 20%
• Substrates 15%

Chemical Compounds

• Molecular Beam Epitaxy 92%
• Migration-Enhanced Epitaxy 70%
• Antiphase Boundary 54%
• Molecular Beam 38%
• Crystallinity 24%
• Electron Particle 17%
• X-Ray Diffraction 15%

Physics & Astronomy

• defects 35%
• molecular beam epitaxy 27%
• antiphase boundaries 13%
• epitaxy 10%
• crystallinity 9%
• diffraction patterns 8%
• high resolution 6%
• x rays 4%
• electrons 4%