TY - JOUR
T1 - Investigation of defect creation in GaP/Si(0 0 1) epitaxial structures
AU - Zhang, Chaomin
AU - Boley, Allison
AU - Faleev, Nikolai
AU - Smith, David
AU - Honsberg, Christiana
N1 - Funding Information:
The authors acknowledge funding from the U.S. Department of Energy under contract DE-EE0006335 and the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC‐1041895. We gratefully acknowledge the use of facilities within the Eyring Materials Center and the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.
Funding Information:
The authors acknowledge funding from the U.S. Department of Energy under contract DE-EE0006335 and the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC‐1041895 . We gratefully acknowledge the use of facilities within the Eyring Materials Center and the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.
Publisher Copyright:
© 2018 Elsevier B.V.
PY - 2018/12/1
Y1 - 2018/12/1
N2 - This work investigates defect formation and evolution associated with the deposition of GaP layers on precisely oriented Si(0 0 1) substrates. The GaP layers were grown with thicknesses ranging from ∼37 nm to ∼2 µm at a growth rate of 0.52 μm/hr using molecular beam epitaxy (MBE). The crystallinity of thin (37-nm) MBE-grown GaP layers was also compared with thin GaP layers grown by migration-enhanced epitaxy (MEE). The MBE growth procedure was shown to postpone relaxation of the epitaxial GaP layers up to a thickness of ∼250 nm. Detailed analysis of high-resolution X-ray diffraction patterns and comparison with cross-sectional transmission electron micrographs clarified the defect formation mechanism. Thin GaP layers showed very low defect densities except for anti-phase boundaries, whereas substantial threading defects predominated in the thicker, noticeably relaxed structures.
AB - This work investigates defect formation and evolution associated with the deposition of GaP layers on precisely oriented Si(0 0 1) substrates. The GaP layers were grown with thicknesses ranging from ∼37 nm to ∼2 µm at a growth rate of 0.52 μm/hr using molecular beam epitaxy (MBE). The crystallinity of thin (37-nm) MBE-grown GaP layers was also compared with thin GaP layers grown by migration-enhanced epitaxy (MEE). The MBE growth procedure was shown to postpone relaxation of the epitaxial GaP layers up to a thickness of ∼250 nm. Detailed analysis of high-resolution X-ray diffraction patterns and comparison with cross-sectional transmission electron micrographs clarified the defect formation mechanism. Thin GaP layers showed very low defect densities except for anti-phase boundaries, whereas substantial threading defects predominated in the thicker, noticeably relaxed structures.
KW - A1. Crystal structure
KW - A1. Defects
KW - A1. High resolution X-ray diffraction
KW - A3. Molecular beam epitaxy
KW - B2. Semiconducting III-V materials
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U2 - 10.1016/j.jcrysgro.2018.09.020
DO - 10.1016/j.jcrysgro.2018.09.020
M3 - Article
AN - SCOPUS:85054027708
VL - 503
SP - 36
EP - 44
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -