Abstract

This work investigates defect formation and evolution associated with the deposition of GaP layers on precisely oriented Si(0 0 1) substrates. The GaP layers were grown with thicknesses ranging from ∼37 nm to ∼2 µm at a growth rate of 0.52 μm/hr using molecular beam epitaxy (MBE). The crystallinity of thin (37-nm) MBE-grown GaP layers was also compared with thin GaP layers grown by migration-enhanced epitaxy (MEE). The MBE growth procedure was shown to postpone relaxation of the epitaxial GaP layers up to a thickness of ∼250 nm. Detailed analysis of high-resolution X-ray diffraction patterns and comparison with cross-sectional transmission electron micrographs clarified the defect formation mechanism. Thin GaP layers showed very low defect densities except for anti-phase boundaries, whereas substantial threading defects predominated in the thicker, noticeably relaxed structures.

Original languageEnglish (US)
Pages (from-to)36-44
Number of pages9
JournalJournal of Crystal Growth
Volume503
DOIs
StatePublished - Dec 1 2018

Fingerprint

Molecular beam epitaxy
Defects
defects
molecular beam epitaxy
Defect density
Epitaxial layers
Phase boundaries
Epitaxial growth
Diffraction patterns
X ray diffraction
antiphase boundaries
Electrons
Substrates
epitaxy
crystallinity
diffraction patterns
high resolution
electrons
x rays

Keywords

  • A1. Crystal structure
  • A1. Defects
  • A1. High resolution X-ray diffraction
  • A3. Molecular beam epitaxy
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Investigation of defect creation in GaP/Si(0 0 1) epitaxial structures. / Zhang, Chaomin; Boley, Allison; Faleev, Nikolai; Smith, David; Honsberg, Christiana.

In: Journal of Crystal Growth, Vol. 503, 01.12.2018, p. 36-44.

Research output: Contribution to journalArticle

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AU - Boley, Allison

AU - Faleev, Nikolai

AU - Smith, David

AU - Honsberg, Christiana

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N2 - This work investigates defect formation and evolution associated with the deposition of GaP layers on precisely oriented Si(0 0 1) substrates. The GaP layers were grown with thicknesses ranging from ∼37 nm to ∼2 µm at a growth rate of 0.52 μm/hr using molecular beam epitaxy (MBE). The crystallinity of thin (37-nm) MBE-grown GaP layers was also compared with thin GaP layers grown by migration-enhanced epitaxy (MEE). The MBE growth procedure was shown to postpone relaxation of the epitaxial GaP layers up to a thickness of ∼250 nm. Detailed analysis of high-resolution X-ray diffraction patterns and comparison with cross-sectional transmission electron micrographs clarified the defect formation mechanism. Thin GaP layers showed very low defect densities except for anti-phase boundaries, whereas substantial threading defects predominated in the thicker, noticeably relaxed structures.

AB - This work investigates defect formation and evolution associated with the deposition of GaP layers on precisely oriented Si(0 0 1) substrates. The GaP layers were grown with thicknesses ranging from ∼37 nm to ∼2 µm at a growth rate of 0.52 μm/hr using molecular beam epitaxy (MBE). The crystallinity of thin (37-nm) MBE-grown GaP layers was also compared with thin GaP layers grown by migration-enhanced epitaxy (MEE). The MBE growth procedure was shown to postpone relaxation of the epitaxial GaP layers up to a thickness of ∼250 nm. Detailed analysis of high-resolution X-ray diffraction patterns and comparison with cross-sectional transmission electron micrographs clarified the defect formation mechanism. Thin GaP layers showed very low defect densities except for anti-phase boundaries, whereas substantial threading defects predominated in the thicker, noticeably relaxed structures.

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