Abstract
This work investigates defect formation and evolution associated with the deposition of GaP layers on precisely oriented Si(0 0 1) substrates. The GaP layers were grown with thicknesses ranging from ∼37 nm to ∼2 µm at a growth rate of 0.52 μm/hr using molecular beam epitaxy (MBE). The crystallinity of thin (37-nm) MBE-grown GaP layers was also compared with thin GaP layers grown by migration-enhanced epitaxy (MEE). The MBE growth procedure was shown to postpone relaxation of the epitaxial GaP layers up to a thickness of ∼250 nm. Detailed analysis of high-resolution X-ray diffraction patterns and comparison with cross-sectional transmission electron micrographs clarified the defect formation mechanism. Thin GaP layers showed very low defect densities except for anti-phase boundaries, whereas substantial threading defects predominated in the thicker, noticeably relaxed structures.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 36-44 |
| Number of pages | 9 |
| Journal | Journal of Crystal Growth |
| Volume | 503 |
| DOIs | |
| State | Published - Dec 1 2018 |
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Keywords
- A1. Crystal structure
- A1. Defects
- A1. High resolution X-ray diffraction
- A3. Molecular beam epitaxy
- B2. Semiconducting III-V materials
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
Cite this
Investigation of defect creation in GaP/Si(0 0 1) epitaxial structures. / Zhang, Chaomin; Boley, Allison; Faleev, Nikolai; Smith, David; Honsberg, Christiana.
In: Journal of Crystal Growth, Vol. 503, 01.12.2018, p. 36-44.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Investigation of defect creation in GaP/Si(0 0 1) epitaxial structures
AU - Zhang, Chaomin
AU - Boley, Allison
AU - Faleev, Nikolai
AU - Smith, David
AU - Honsberg, Christiana
PY - 2018/12/1
Y1 - 2018/12/1
N2 - This work investigates defect formation and evolution associated with the deposition of GaP layers on precisely oriented Si(0 0 1) substrates. The GaP layers were grown with thicknesses ranging from ∼37 nm to ∼2 µm at a growth rate of 0.52 μm/hr using molecular beam epitaxy (MBE). The crystallinity of thin (37-nm) MBE-grown GaP layers was also compared with thin GaP layers grown by migration-enhanced epitaxy (MEE). The MBE growth procedure was shown to postpone relaxation of the epitaxial GaP layers up to a thickness of ∼250 nm. Detailed analysis of high-resolution X-ray diffraction patterns and comparison with cross-sectional transmission electron micrographs clarified the defect formation mechanism. Thin GaP layers showed very low defect densities except for anti-phase boundaries, whereas substantial threading defects predominated in the thicker, noticeably relaxed structures.
AB - This work investigates defect formation and evolution associated with the deposition of GaP layers on precisely oriented Si(0 0 1) substrates. The GaP layers were grown with thicknesses ranging from ∼37 nm to ∼2 µm at a growth rate of 0.52 μm/hr using molecular beam epitaxy (MBE). The crystallinity of thin (37-nm) MBE-grown GaP layers was also compared with thin GaP layers grown by migration-enhanced epitaxy (MEE). The MBE growth procedure was shown to postpone relaxation of the epitaxial GaP layers up to a thickness of ∼250 nm. Detailed analysis of high-resolution X-ray diffraction patterns and comparison with cross-sectional transmission electron micrographs clarified the defect formation mechanism. Thin GaP layers showed very low defect densities except for anti-phase boundaries, whereas substantial threading defects predominated in the thicker, noticeably relaxed structures.
KW - A1. Crystal structure
KW - A1. Defects
KW - A1. High resolution X-ray diffraction
KW - A3. Molecular beam epitaxy
KW - B2. Semiconducting III-V materials
UR - http://www.scopus.com/inward/record.url?scp=85054027708&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85054027708&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2018.09.020
DO - 10.1016/j.jcrysgro.2018.09.020
M3 - Article
VL - 503
SP - 36
EP - 44
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -