Implantation-and etching-free high voltage vertical GaN p-n diodes terminated by plasma-hydrogenated p-GaN: Revealing the role of thermal annealing

Houqiang Fu, Kai Fu, Hanxiao Liu, Shanthan R. Alugubelli, Xuanqi Huang, Hong Chen, Jossue Montes, Tsung Han Yang, Chen Yang, Jingan Zhou, Fernando A. Ponce, Yuji Zhao

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Engineering & Materials Science

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