Implantation-and etching-free high voltage vertical GaN p-n diodes terminated by plasma-hydrogenated p-GaN: Revealing the role of thermal annealing

Houqiang Fu, Kai Fu, Hanxiao Liu, Shanthan R. Alugubelli, Xuanqi Huang, Hong Chen, Jossue Montes, Tsung Han Yang, Chen Yang, Jingan Zhou, Fernando Ponce, Yuji Zhao

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Low-damage, low-temperature, and easy-to-implement hydrogen-plasma-based termination is attractive for fabricating implantation- and etching-free GaN power p-n diodes. This work investigates in detail the hydrogenation process and unveils the critical role of thermal annealing. A subsequent thermal annealing is key to thermally driving down hydrogen to fully hydrogenate p-GaN to form the termination. The devices showed a specific on-resistance of 0.4 mΩ cm 2 and a breakdown voltage (BV) of ∼1.4 kV. They also exhibited improved BV compared with mesa-etched devices. High temperature performance was also investigated. These results can serve as important references for future developments of GaN power electronics.

Original languageEnglish (US)
Article number051015
JournalApplied Physics Express
Volume12
Issue number5
DOIs
StatePublished - Jan 1 2019

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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