Hollow‐anode plasma source for molecular beam epitaxy of gallium nitride

Engineering & Materials Science

• Plasma sources 76%
• Molecular beam epitaxy 72%
• Gallium nitride 64%
• Anodes 45%
• Cathodoluminescence 17%
• Rutherford backscattering spectroscopy 17%
• Plasmas 17%
• Nitrogen plasma 17%
• Photoluminescence 15%
• Plasma jets 14%
• Glow discharges 13%
• Pressure gradient 10%
• Diffraction 10%
• Contamination 9%
• Aluminum oxide 9%
• Ions 8%
• Ignition 8%
• Substrates 6%
• Defects 6%
• Electric potential 4%

Physics & Astronomy

• gallium nitrides 54%
• anodes 40%
• molecular beam epitaxy 40%
• nitrogen plasma 11%
• dense plasmas 10%
• cathodoluminescence 10%
• sheaths 9%
• pressure gradients 9%
• glow discharges 9%
• ignition 9%
• plasma jets 8%
• contamination 8%
• backscattering 8%
• damage 6%
• photoluminescence 6%
• defects 5%
• curves 5%
• electric potential 5%
• diffraction 5%
• ions 4%

Medicine & Life Sciences

• gallium nitride 100%
• Electrodes 40%
• X-Ray Diffraction 11%
• Nitrogen 9%
• Ions 7%
• X-Rays 7%
• Pressure 6%
• Growth 4%