Hollow‐anode plasma source for molecular beam epitaxy of gallium nitride

GaN films have been grown by molecular beam epitaxy (MBE) using a hollow‐anode nitrogen plasma source. The source was developed to minimize defect formation as a result of contamination and ion damage. The hollow‐anode discharge is a special form of glow discharge with very small anode area. A positive anode voltage drop of 30–40 V and an increased anode sheath thickness leads to ignition of a relatively dense plasma in front of the anode hole. Driven by the pressure gradient, the ‘‘anode’’ plasma forms a bright plasma jet streaming with supersonic velocity towards the substrate. Films of GaN have been grown on (0001) SiC and (0001) Al₂O₃ at 600–800 °C. The films were investigated by photoluminescence, cathodoluminescence, x‐ray diffraction, Rutherford backscattering, and particle‐induced x‐ray emission. The film with the highest structural quality had a rocking curve width of 5 arcmin, the lowest reported value for MBE growth to date.