Hollow‐anode plasma source for molecular beam epitaxy of gallium nitride

A. Anders, N. Newman, M. Rubin, M. Dickinson, E. Jones, P. Phatak, A. Gassmann

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

GaN films have been grown by molecular beam epitaxy (MBE) using a hollow‐anode nitrogen plasma source. The source was developed to minimize defect formation as a result of contamination and ion damage. The hollow‐anode discharge is a special form of glow discharge with very small anode area. A positive anode voltage drop of 30–40 V and an increased anode sheath thickness leads to ignition of a relatively dense plasma in front of the anode hole. Driven by the pressure gradient, the ‘‘anode’’ plasma forms a bright plasma jet streaming with supersonic velocity towards the substrate. Films of GaN have been grown on (0001) SiC and (0001) Al2O3 at 600–800 °C. The films were investigated by photoluminescence, cathodoluminescence, x‐ray diffraction, Rutherford backscattering, and particle‐induced x‐ray emission. The film with the highest structural quality had a rocking curve width of 5 arcmin, the lowest reported value for MBE growth to date.

Original languageEnglish (US)
Pages (from-to)905-907
Number of pages3
JournalReview of Scientific Instruments
Volume67
Issue number3
DOIs
StatePublished - Mar 1996
Externally publishedYes

Keywords

  • ALUMINIUM OXIDES
  • CATHODOLUMINESCENCE
  • CRYSTAL STRUCTURE
  • FILMS
  • GALLIUM NITRIDES
  • GLOW DISCHARGES
  • MOLECULAR BEAM EPITAXY
  • NITROGEN
  • PHOTOLUMINESCENCE
  • PLASMA SHEATH
  • SILICON CARBIDES
  • SUBSTRATES
  • TEMPERATURE RANGE 0400−1000 K
  • TEMPERATURE RANGE 1000−4000 K

ASJC Scopus subject areas

  • Instrumentation

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