Growth and characterization of high quality epitaxial GaN on ZnO(0001) by reactive molecular beam epitaxy

Engineering & Materials Science

• Molecular beam epitaxy 100%
• Epilayers 73%
• Zinc 69%
• Characterization (materials science) 56%
• Atomic force microscopy 54%
• Oxygen 52%
• Transmission electron microscopy 44%
• Photoluminescence 34%
• Crystal lattices 33%
• Lattice constants 31%
• Buffer layers 30%
• Diffraction patterns 30%
• Substrates 30%
• Electron diffraction 28%
• Crystals 21%
• Surface roughness 17%
• Temperature 8%

Chemical Compounds

• Molecular Beam Epitaxy 92%
• Crystal Lattice Parameter 51%
• Atomic Force Microscopy 51%
• Transmission Electron Microscopy 42%
• Reflectivity 37%
• Electron Diffraction 32%
• Surface Roughness 32%
• Dioxygen 31%
• Photoluminescence 24%
• Buffer Solution 20%
• Surface 10%

Physics & Astronomy

• molecular beam epitaxy 54%
• zinc 43%
• characterization 35%
• oxygen 29%
• atomic force microscopy 24%
• transmission electron microscopy 21%
• crystal lattices 16%
• optical measurement 16%
• wurtzite 16%
• lattice parameters 14%
• electron diffraction 13%
• surface roughness 13%
• buffers 13%
• diffraction patterns 13%
• photoluminescence 11%
• reflectance 11%
• crystals 7%