Growth and characterization of high quality epitaxial GaN on ZnO(0001) by reactive molecular beam epitaxy

F. Hamdani, M. Yeadon, David Smith, H. Tang, W. Kim, A. Salvador, A. E. Botchkarev, J. M. Gibson, H. Morkoç

Research output: Contribution to journalArticle

Abstract

High quality wurtzite GaN epilayers have been grown on oxygen and zinc surfaces of ZnO(0001) substrates by reactive molecular beam epitaxy. Optical measurements point to high quality presumably due to the near close match of both the crystal lattice parameter and the stacking order between GaN and ZnO. The optional and structural characterization of the GaN epilayers and ZnO substrates was performed using photoluminescence, reflectivity, atomic force microscopy, and transmission electron microscopy. Although atomic force microscopy results indicate that the zinc face of ZnO is smoother than the oxygen-face, optical measuremets demonstrate that the oxygen face leads to higher quality GaN compared to the zinc-face. The surface roughness has been reduced by using an intermediate low temperature GaN buffer layer. Transmission electron microscopy and electron diffraction pattern show a considerable improvement in crystal quality of the GaN top-region compared to the interface region.

Original languageEnglish (US)
Pages (from-to)1201-1204
Number of pages4
JournalMaterials Science Forum
Volume264-268
Issue numberPART 2
StatePublished - Dec 1 1998

Keywords

  • Atomic Force Microscopy
  • Photoluminescence
  • Reflectivity
  • Surface Polarity
  • TEM
  • Zinc Oxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Hamdani, F., Yeadon, M., Smith, D., Tang, H., Kim, W., Salvador, A., Botchkarev, A. E., Gibson, J. M., & Morkoç, H. (1998). Growth and characterization of high quality epitaxial GaN on ZnO(0001) by reactive molecular beam epitaxy. Materials Science Forum, 264-268(PART 2), 1201-1204.