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Full band Monte Carlo simulation of dislocation effects on 250 nm AlGaN-GaN HEMT
Fabio Vitobello, Nicolas Faralli, Shinya Yamakawa, Stephen Goodnick, Marco Saraniti
- Nano-Electronics, Arizona Institute of (AINE)
- Materials Science and Engineering
- Adaptive Neural Systems, Center for (ANS)
- Single Molecule Biophysics, Center for (SMB)
- Engineering, Ira A. Fulton Schools of (IAFSE)
- Electrical Engineering
- Solid State Electronics Research Center (CSSER)
- Electrical, Computer, and Energy Engineering, School of (IAFSE-ECEE)
- Knowledge Enterprise (KE)
- Biodesign Institute
- Computational Nanoscience, Center for (CCN)
Research output: Contribution to journal › Article › peer-review