In this work, we present a full band Monte Carlo simulation of the effects of dislocation scattering on the performance of a 0.25 μm AlGaN/GaN HEMT (high electron mobility transistor). We performed a full characterization of the device and validated the simulation results with experimental data (Lee et al. in IEEE Electron. Dev. Lett. 24:613-615, 2003). Here we show a study of the DC device performance as a function of the density of thread dislocations.
- Dislocation scattering
- Full band Monte Carlo
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Modeling and Simulation
- Electrical and Electronic Engineering