Abstract

In this work, we present a full band Monte Carlo simulation of the effects of dislocation scattering on the performance of a 0.25 μm AlGaN/GaN HEMT (high electron mobility transistor). We performed a full characterization of the device and validated the simulation results with experimental data (Lee et al. in IEEE Electron. Dev. Lett. 24:613-615, 2003). Here we show a study of the DC device performance as a function of the density of thread dislocations.

Original languageEnglish (US)
Pages (from-to)244-247
Number of pages4
JournalJournal of Computational Electronics
Volume7
Issue number3
DOIs
StatePublished - Feb 13 2008

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Keywords

  • Dislocation scattering
  • Full band Monte Carlo
  • GaN
  • HEMT

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

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