First-principles simulations of a-Si and a-Si:H surfaces

Engineering & Materials Science

• Hydrogen 100%
• Local density approximation 87%
• Dangling bonds 76%
• Defects 57%
• Surface defects 50%
• Surface structure 50%
• Atoms 43%
• Boundary conditions 31%

Chemical Compounds

• Simulation 79%
• Local-Density Approximation 60%
• Dangling Bond 55%
• Surface Defect 49%
• Calculation Method 45%
• Surface Structure 40%
• Surface 40%

Physics & Astronomy

• simulation 47%
• defects 34%
• surface defects 34%
• boundary conditions 22%
• hydrogen 19%
• approximation 16%
• electronics 16%
• atoms 15%