First-principles simulations of a-Si and a-Si:H surfaces

Karland A. Kilian, David A. Drabold, James B. Adams

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

We use ab initio local-density-approximation methods to develop an ab initio model of an a-Si and an a-Si:H surface. Starting with a supercell of bulk a-Si, we remove periodic boundary conditions in one direction and relax the sample using ab initio methods. H is added to remove bulk defects. The surface structure and coordination of atoms is discussed, and defect states are characterized. H is added to dangling bonds on the a-Si:H surface, creating a hydrogen-terminated a-Si:H surface. We explore the relationship between electronic and geometric surface defects.

Original languageEnglish (US)
Pages (from-to)17393-17399
Number of pages7
JournalPhysical Review B
Volume48
Issue number23
DOIs
StatePublished - Jan 1 1993
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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