Evaluation of diffusion barrier and electrical properties of tantalum oxynitride thin films for silver metallization

Engineering & Materials Science

• Diffusion barriers 100%
• Tantalum 93%
• Metallizing 78%
• Silver 73%
• Electric properties 72%
• Thin films 64%
• Rutherford backscattering spectroscopy 50%
• Spectrometry 35%
• Silicon 32%
• Leakage currents 29%
• Current density 26%
• Diodes 24%
• Depth profiling 22%
• X ray diffraction analysis 17%
• Thermodynamic stability 14%
• Transmission electron microscopy 13%
• Vacuum 11%
• Characterization (materials science) 11%
• Substrates 9%
• Cracks 9%
• Temperature 5%

Physics & Astronomy

• oxynitrides 80%
• tantalum 73%
• silver 55%
• electrical properties 49%
• evaluation 42%
• thin films 34%
• backscattering 15%
• leakage 14%
• silicon 13%
• diodes 12%
• current density 12%
• spectroscopy 8%
• electrical measurement 8%
• thermal stability 7%
• direct current 6%
• cracks 6%
• transmission electron microscopy 5%
• vacuum 5%
• causes 5%
• characterization 4%
• diffraction 4%
• x rays 3%
• interactions 3%
• temperature 2%

Chemical Compounds

• Diffusion Barrier 85%
• Electrical Property 56%
• Rutherford Backscattering Spectroscopy 34%
• Current Density 19%
• Leakage Current 17%
• Depth Profiling 16%
• Vacuum 10%
• Thermal Stability 8%
• Transmission Electron Microscopy 8%
• X-Ray Diffraction 6%