Evaluation of diffusion barrier and electrical properties of tantalum oxynitride thin films for silver metallization

E. Misra, Y. Wang, N. D. Theodore, Terry Alford

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The thermal stability and the diffusion barrier properties of DC reactively sputtered tantalum oxynitride (Ta-O-N) thin films, between silver (Ag) and silicon (Si) p+n diodes were investigated. Both materials characterization (X-ray diffraction analysis, Rutherford backscattering spectrometry (RBS), Auger depth profiling) and electrical measurements (reverse-biased junction leakage current-density) were used to evaluate diffusion barrier properties of the thin films. The leakage current density of p+n diodes with the barrier (Ta-O-N) was approximately four orders of magnitude lower than those without barriers after a 30 min, 400°C back contact anneal. The Ta-O-N barriers were stable up to 500°C, 30 min anneals. However, this was not the case for the 600 °C anneal. RBS spectra and cross-sectional transmission electron microscopy of as-deposited and vacuum annealed samples of Ag/barrier (Ta-O-N)/Si indicate the absence of any interfacial interaction between the barrier and substrate (silicon). The failure of the Ta-O-N barriers has been attributed to thermally induced stresses, which cause the thin film to crack at elevated temperatures.

Original languageEnglish (US)
Pages (from-to)338-345
Number of pages8
JournalThin Solid Films
Volume457
Issue number2
DOIs
StatePublished - Jun 15 2004

Fingerprint

Tantalum
Diffusion barriers
oxynitrides
tantalum
Metallizing
Silver
Electric properties
electrical properties
silver
Silicon
Thin films
evaluation
thin films
Rutherford backscattering spectroscopy
Leakage currents
Spectrometry
Diodes
Current density
Depth profiling
backscattering

Keywords

  • Diffusion barrier
  • Electrical properties and measurements
  • Silver metallization

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Evaluation of diffusion barrier and electrical properties of tantalum oxynitride thin films for silver metallization. / Misra, E.; Wang, Y.; Theodore, N. D.; Alford, Terry.

In: Thin Solid Films, Vol. 457, No. 2, 15.06.2004, p. 338-345.

Research output: Contribution to journalArticle

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