Estimation and verification of radiation induced not and Nit energy distribution using combined bipolar and MOS characterization methods in gated bipolar devices

X. J. Chen, Hugh Barnaby, R. L. Pease, R. D. Schrimpf, D. Platteter, M. Shaneyfelt, B. Vermeire

Research output: Contribution to journalArticle

22 Scopus citations


Complementary bipolar and MOS characterization techniques, specifically the gate sweep (GS) and sub-threshold sweep (SS), are used to estimate the radiation induced oxide charge (Not) and interface trap (N it) buildup in gated bipolar test devices. The gate sweep and sub-threshold sweep data from recent TID testing of gated lateral PNP devices suggests an asymmetric energy distribution of interface traps after ionizing radiation exposure. Charge pumping (CP) experiments were done on the test devices to estimate the energy distribution of interface traps induced by radiation. The CP results are used in this paper to confirm the analytical findings from the GS and SS techniques and solidify the use of the complementary method as a simple way of determining radiation induced interface trap distribution in gated bipolar devices.

Original languageEnglish (US)
Pages (from-to)2245-2251
Number of pages7
JournalIEEE Transactions on Nuclear Science
Issue number6
StatePublished - Dec 1 2005



  • BJT
  • Charge pumping
  • Interface traps
  • TID

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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