Erratum: Surface passivation of n-type c-Si wafers by a-Si/SiO 2/SiNx stack with <1 cm/s effective surface recombination velocity (Applied Physics Letters (2013) 103 (183903))

Stanislau Herasimenka, Clarence J. Tracy, Vivek Sharma, Natasa Vulic, William J. Dauksher, Stuart Bowden

Research output: Contribution to journalArticle

Original languageEnglish (US)
Article number219901
JournalApplied Physics Letters
Volume103
Issue number21
DOIs
StatePublished - Nov 18 2013

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passivity
wafers
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  • Physics and Astronomy (miscellaneous)

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Erratum : Surface passivation of n-type c-Si wafers by a-Si/SiO 2/SiNx stack with <1 cm/s effective surface recombination velocity (Applied Physics Letters (2013) 103 (183903)). / Herasimenka, Stanislau; Tracy, Clarence J.; Sharma, Vivek; Vulic, Natasa; Dauksher, William J.; Bowden, Stuart.

In: Applied Physics Letters, Vol. 103, No. 21, 219901, 18.11.2013.

Research output: Contribution to journalArticle

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