Erratum: Surface passivation of n-type c-Si wafers by a-Si/SiO 2/SiNx stack with <1 cm/s effective surface recombination velocity (Applied Physics Letters (2013) 103 (183903))

Stanislau Herasimenka, Clarence J. Tracy, Vivek Sharma, Natasa Vulic, William J. Dauksher, Stuart Bowden

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