Epitaxial growth of barium titanate thin films on germanium via atomic layer deposition

Edward L. Lin, Agham B. Posadas, Hsin Wei Wu, David Smith, Alexander A. Demkov, John G. Ekerdt

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

Barium titanate BaTiO3 (BTO) thin films were epitaxially grown at 225 °C on 2 × 1-reconstructed Ge(001) surfaces via atomic layer deposition (ALD). Approximately 2 nm of BTO film was grown directly on Ge(001) as an amorphous film. Electron diffraction confirmed the epitaxy of the BTO films after post-deposition annealing at 650 °C. Additional BTO layers grown on the crystalline BTO/Ge(001) film were crystalline as-deposited. X-ray diffraction indicated that the epitaxial BTO films had a c-axis out-of-plane orientation, and the abrupt BTO/Ge interface was preserved with no sign of any interfacial germanium oxide. Scanning transmission electron microscopy provided evidence of Ba atoms occupying the troughs of the dimer rows of the 2 × 1-reconstructed Ge(001) surface, as well as preservation of the 2 × 1-reconstructed Ge(001) surface. This study presents a low-temperature process to fabricate BTO/Ge heterostructures.

Original languageEnglish (US)
Pages (from-to)6-11
Number of pages6
JournalJournal of Crystal Growth
Volume476
DOIs
StatePublished - Oct 15 2017

Keywords

  • A1. Interfaces
  • A3. Atomic layer deposition
  • B1. Perovskites
  • B2. Ferroelectric materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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