Abstract
Barium titanate BaTiO3 (BTO) thin films were epitaxially grown at 225 °C on 2 × 1-reconstructed Ge(001) surfaces via atomic layer deposition (ALD). Approximately 2 nm of BTO film was grown directly on Ge(001) as an amorphous film. Electron diffraction confirmed the epitaxy of the BTO films after post-deposition annealing at 650 °C. Additional BTO layers grown on the crystalline BTO/Ge(001) film were crystalline as-deposited. X-ray diffraction indicated that the epitaxial BTO films had a c-axis out-of-plane orientation, and the abrupt BTO/Ge interface was preserved with no sign of any interfacial germanium oxide. Scanning transmission electron microscopy provided evidence of Ba atoms occupying the troughs of the dimer rows of the 2 × 1-reconstructed Ge(001) surface, as well as preservation of the 2 × 1-reconstructed Ge(001) surface. This study presents a low-temperature process to fabricate BTO/Ge heterostructures.
Original language | English (US) |
---|---|
Pages (from-to) | 6-11 |
Number of pages | 6 |
Journal | Journal of Crystal Growth |
Volume | 476 |
DOIs | |
State | Published - Oct 15 2017 |
Keywords
- A1. Interfaces
- A3. Atomic layer deposition
- B1. Perovskites
- B2. Ferroelectric materials
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry