Energy loss to bound hydrogen at the Si surface

D. K. Ferry, K. Hess

Research output: Contribution to journalConference article

Abstract

The degradation of Si VLSI circuits has been a continuing topic of considerable interest for many years. It was at first thought that the basic 3.1 eV required to lift a carrier from the Si conduction band into the SiO2 insulator would be a limit that could be passed by reductions in the operating voltages. This has proved not to be the case. More recently, it has been proposed that electron-electron scattering between carriers in the channel of the device could lead to charge injection and subsequent degradation. In an accompanying paper, we show that this effect is rather small. Recently, we have predicted a new, low voltage process in which hydrogen bonded at the Si interface can be transferred to an anti-bonding site in the Si lattice with the absorption of only 1.2 eV. In this paper, we examine the scattering rate for a hot carrier to lose an energy hω to a bound particle. In this case, the momentum exchange is primarily two dimensional, so that the quasi-two-dimensional nature of the carriers in the inversion layer becomes important.

Original languageEnglish (US)
Pages (from-to)535-537
Number of pages3
JournalPhysica B: Condensed Matter
Volume272
Issue number1-4
DOIs
StatePublished - Dec 1 1999
EventProceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn
Duration: Jul 19 1999Jul 23 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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