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Energy loss to bound hydrogen at the Si surface
D. K. Ferry, K. Hess
Solid State Electronics Research Center (CSSER)
Electrical, Computer, and Energy Engineering, School of (IAFSE-ECEE)
Research output
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peer-review
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Engineering & Materials Science
Electron scattering
100%
Inversion layers
95%
Energy dissipation
92%
Conduction bands
92%
Hydrogen
86%
Charge injection
78%
Degradation
75%
Hot carriers
72%
VLSI circuits
64%
Electric potential
56%
Electrons
54%
Scattering
51%
Momentum
49%
Chemical Compounds
Voltage
78%
Momentum
71%
Nonconductor
61%
Conduction Band
58%
Hydrogen
55%
Energy
51%
Surface
34%
Reduction
24%
Physics & Astronomy
energy dissipation
87%
hydrogen
66%
very large scale integration
32%
low voltage
26%
electron scattering
24%
conduction bands
23%
inversions
22%
insulators
19%
injection
19%
momentum
18%
electric potential
14%
scattering
13%
electrons
11%
energy
8%