Electron and hole velocity overshoots in an Al 0.3Ga 0.7As -based p-i-n semiconductor nanostructure observed by subpicosecond time-resolved Raman spectroscopy

W. Liang, Kong-Thon Tsen, D. K. Ferry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Engineering & Materials Science

Physics & Astronomy