Abstract
We report experimental results on simultaneous measurement of electron as well as hole transient transport in an Al 0.3Ga 0.7 As -based p-i-n semiconductor nanostructure by using picosecond/subpicosecond Raman spectroscopy. Electron and hole velocity overshoots are directly observed. These experimental results are discussed and explained.
Original language | English (US) |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Editors | K.T. Tsen, J.J. Song, H. Jiang |
Pages | 412-421 |
Number of pages | 10 |
Volume | 5352 |
DOIs | |
State | Published - 2004 |
Event | Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII - San Jose, CA, United States Duration: Jan 26 2004 → Jan 29 2004 |
Other
Other | Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII |
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Country/Territory | United States |
City | San Jose, CA |
Period | 1/26/04 → 1/29/04 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics