Electron and hole velocity overshoots in an Al 0.3Ga 0.7As -based p-i-n semiconductor nanostructure observed by subpicosecond time-resolved Raman spectroscopy

W. Liang, Kong-Thon Tsen, D. K. Ferry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report experimental results on simultaneous measurement of electron as well as hole transient transport in an Al 0.3Ga 0.7 As -based p-i-n semiconductor nanostructure by using picosecond/subpicosecond Raman spectroscopy. Electron and hole velocity overshoots are directly observed. These experimental results are discussed and explained.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsK.T. Tsen, J.J. Song, H. Jiang
Pages412-421
Number of pages10
Volume5352
DOIs
StatePublished - 2004
EventUltrafast Phenomena in Semiconductors and Nanostructure Materials VIII - San Jose, CA, United States
Duration: Jan 26 2004Jan 29 2004

Other

OtherUltrafast Phenomena in Semiconductors and Nanostructure Materials VIII
CountryUnited States
CitySan Jose, CA
Period1/26/041/29/04

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Liang, W., Tsen, K-T., & Ferry, D. K. (2004). Electron and hole velocity overshoots in an Al 0.3Ga 0.7As -based p-i-n semiconductor nanostructure observed by subpicosecond time-resolved Raman spectroscopy In K. T. Tsen, J. J. Song, & H. Jiang (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 5352, pp. 412-421) https://doi.org/10.1117/12.528339