Effect of growth temperature on the luminescent and structural properties of InGaAsSbN/GaAs quantum wells for 1.3 μm telecom application

L. Borkovska, O. Yefanov, O. Gudymenko, Shane Johnson, V. Kladko, N. Korsunska, T. Kryshtab, Yu Sadofyev, Yong-Hang Zhang

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Variations of the characteristics of Sb-surfactant assisted grown InGaAsN/GaAs single quantum wells (QWs) in dependence on QW growth temperature (TGR = 442-505 °C) are investigated by the photoluminescence (PL) and high-resolution X-ray diffraction (HRXRD) methods. The QWs grown at ∼480 °C demonstrated optimal PL characteristics, namely the highest PL intensity and small potential fluctuations. A good quality of heterointerfaces is proved by HRXRD. These structures emit at ∼1.29 μm at 300 K and are promising for application in long wavelength opto-electronic devices. The good structural properties of these QWs are assigned to Sb surfactant effect that allows shifting of the TGR to higher temperatures without significant alloy decomposition. The increase of TGR in its turn results in the decrease of the density of nonradiative defects that are the specific feature of low temperature growth.

Original languageEnglish (US)
Pages (from-to)786-789
Number of pages4
JournalThin Solid Films
Volume515
Issue number2 SPEC. ISS.
DOIs
StatePublished - Oct 25 2006

Keywords

  • HRXRD
  • III-V semiconductors
  • PL
  • Quantum well
  • Surfactant-assisted growth

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Effect of growth temperature on the luminescent and structural properties of InGaAsSbN/GaAs quantum wells for 1.3 μm telecom application'. Together they form a unique fingerprint.

  • Cite this