Effect of growth temperature on the luminescent and structural properties of InGaAsSbN/GaAs quantum wells for 1.3 μm telecom application

L. Borkovska, O. Yefanov, O. Gudymenko, Shane Johnson, V. Kladko, N. Korsunska, T. Kryshtab, Yu Sadofyev, Yong-Hang Zhang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Variations of the characteristics of Sb-surfactant assisted grown InGaAsN/GaAs single quantum wells (QWs) in dependence on QW growth temperature (TGR = 442-505 °C) are investigated by the photoluminescence (PL) and high-resolution X-ray diffraction (HRXRD) methods. The QWs grown at ∼480 °C demonstrated optimal PL characteristics, namely the highest PL intensity and small potential fluctuations. A good quality of heterointerfaces is proved by HRXRD. These structures emit at ∼1.29 μm at 300 K and are promising for application in long wavelength opto-electronic devices. The good structural properties of these QWs are assigned to Sb surfactant effect that allows shifting of the TGR to higher temperatures without significant alloy decomposition. The increase of TGR in its turn results in the decrease of the density of nonradiative defects that are the specific feature of low temperature growth.

Original languageEnglish (US)
Pages (from-to)786-789
Number of pages4
JournalThin Solid Films
Volume515
Issue number2 SPEC. ISS.
DOIs
StatePublished - Oct 25 2006

Fingerprint

Growth temperature
Semiconductor quantum wells
Structural properties
quantum wells
Photoluminescence
photoluminescence
Surface-Active Agents
Surface active agents
surfactants
X ray diffraction
temperature
high resolution
optoelectronic devices
diffraction
Optoelectronic devices
x rays
Decomposition
decomposition
Wavelength
Defects

Keywords

  • HRXRD
  • III-V semiconductors
  • PL
  • Quantum well
  • Surfactant-assisted growth

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Effect of growth temperature on the luminescent and structural properties of InGaAsSbN/GaAs quantum wells for 1.3 μm telecom application. / Borkovska, L.; Yefanov, O.; Gudymenko, O.; Johnson, Shane; Kladko, V.; Korsunska, N.; Kryshtab, T.; Sadofyev, Yu; Zhang, Yong-Hang.

In: Thin Solid Films, Vol. 515, No. 2 SPEC. ISS., 25.10.2006, p. 786-789.

Research output: Contribution to journalArticle

Borkovska, L. ; Yefanov, O. ; Gudymenko, O. ; Johnson, Shane ; Kladko, V. ; Korsunska, N. ; Kryshtab, T. ; Sadofyev, Yu ; Zhang, Yong-Hang. / Effect of growth temperature on the luminescent and structural properties of InGaAsSbN/GaAs quantum wells for 1.3 μm telecom application. In: Thin Solid Films. 2006 ; Vol. 515, No. 2 SPEC. ISS. pp. 786-789.
@article{9c895baf33954b26a3c0a025ab33b5a0,
title = "Effect of growth temperature on the luminescent and structural properties of InGaAsSbN/GaAs quantum wells for 1.3 μm telecom application",
abstract = "Variations of the characteristics of Sb-surfactant assisted grown InGaAsN/GaAs single quantum wells (QWs) in dependence on QW growth temperature (TGR = 442-505 °C) are investigated by the photoluminescence (PL) and high-resolution X-ray diffraction (HRXRD) methods. The QWs grown at ∼480 °C demonstrated optimal PL characteristics, namely the highest PL intensity and small potential fluctuations. A good quality of heterointerfaces is proved by HRXRD. These structures emit at ∼1.29 μm at 300 K and are promising for application in long wavelength opto-electronic devices. The good structural properties of these QWs are assigned to Sb surfactant effect that allows shifting of the TGR to higher temperatures without significant alloy decomposition. The increase of TGR in its turn results in the decrease of the density of nonradiative defects that are the specific feature of low temperature growth.",
keywords = "HRXRD, III-V semiconductors, PL, Quantum well, Surfactant-assisted growth",
author = "L. Borkovska and O. Yefanov and O. Gudymenko and Shane Johnson and V. Kladko and N. Korsunska and T. Kryshtab and Yu Sadofyev and Yong-Hang Zhang",
year = "2006",
month = "10",
day = "25",
doi = "10.1016/j.tsf.2005.12.194",
language = "English (US)",
volume = "515",
pages = "786--789",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "2 SPEC. ISS.",

}

TY - JOUR

T1 - Effect of growth temperature on the luminescent and structural properties of InGaAsSbN/GaAs quantum wells for 1.3 μm telecom application

AU - Borkovska, L.

AU - Yefanov, O.

AU - Gudymenko, O.

AU - Johnson, Shane

AU - Kladko, V.

AU - Korsunska, N.

AU - Kryshtab, T.

AU - Sadofyev, Yu

AU - Zhang, Yong-Hang

PY - 2006/10/25

Y1 - 2006/10/25

N2 - Variations of the characteristics of Sb-surfactant assisted grown InGaAsN/GaAs single quantum wells (QWs) in dependence on QW growth temperature (TGR = 442-505 °C) are investigated by the photoluminescence (PL) and high-resolution X-ray diffraction (HRXRD) methods. The QWs grown at ∼480 °C demonstrated optimal PL characteristics, namely the highest PL intensity and small potential fluctuations. A good quality of heterointerfaces is proved by HRXRD. These structures emit at ∼1.29 μm at 300 K and are promising for application in long wavelength opto-electronic devices. The good structural properties of these QWs are assigned to Sb surfactant effect that allows shifting of the TGR to higher temperatures without significant alloy decomposition. The increase of TGR in its turn results in the decrease of the density of nonradiative defects that are the specific feature of low temperature growth.

AB - Variations of the characteristics of Sb-surfactant assisted grown InGaAsN/GaAs single quantum wells (QWs) in dependence on QW growth temperature (TGR = 442-505 °C) are investigated by the photoluminescence (PL) and high-resolution X-ray diffraction (HRXRD) methods. The QWs grown at ∼480 °C demonstrated optimal PL characteristics, namely the highest PL intensity and small potential fluctuations. A good quality of heterointerfaces is proved by HRXRD. These structures emit at ∼1.29 μm at 300 K and are promising for application in long wavelength opto-electronic devices. The good structural properties of these QWs are assigned to Sb surfactant effect that allows shifting of the TGR to higher temperatures without significant alloy decomposition. The increase of TGR in its turn results in the decrease of the density of nonradiative defects that are the specific feature of low temperature growth.

KW - HRXRD

KW - III-V semiconductors

KW - PL

KW - Quantum well

KW - Surfactant-assisted growth

UR - http://www.scopus.com/inward/record.url?scp=33748898706&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33748898706&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2005.12.194

DO - 10.1016/j.tsf.2005.12.194

M3 - Article

AN - SCOPUS:33748898706

VL - 515

SP - 786

EP - 789

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 2 SPEC. ISS.

ER -