Effect of growth temperature on the luminescent and structural properties of InGaAsSbN/GaAs quantum wells for 1.3 μm telecom application

L. Borkovska, O. Yefanov, O. Gudymenko, Shane Johnson, V. Kladko, N. Korsunska, T. Kryshtab, Yu Sadofyev, Yong-Hang Zhang

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