@article{f378040a717a40df90b9501c8b1700c8,
title = "Direct strain measurement in a 65 nm node strained silicon transistor by convergent-beam electron diffraction",
abstract = "Using the energy-filtered convergent-beam electron diffraction (CBED) technique in a transmission electron microscope, the authors report here a direct measurement of the lattice parameters of uniaxially strained silicon as close as 25 nm below the gate in a 65 nm node p -type metal-oxide-semiconductor field-effect transistor with SiGe source and drain. It is found that the dominant strain component (0.58%) is compressive along the source-drain direction. The compressive stress is 1.1 GPa along this direction. These findings demonstrate that CBED can serve as a strain metrology technique for the development of strained silicon device technology.",
author = "Peng Zhang and Istratov, {Andrei A.} and Weber, {Eicke R.} and Christian Kisielowski and Haifeng He and Chris Nelson and Spence, {John C.H.}",
note = "Funding Information: The UC Berkeley group was supported by SiWEDS. The authors acknowledge the use of the facilities of the National Center for Electron Microscopy, Lawrence Berkeley National Laboratory. J.C.H.S. and H.H. acknowledge the support of Department of Energy under Contract No. DOE.FG03-02ER45596. The authors thank A. Armigliato, M. Wibbelt, and J. Krieger for establishing the ASAC loaning license. They acknowledge the assistance from R. Wise and H. Weijtmans of Texas Instruments and from the TEM group, Santa Clara site of Intel Corporation.",
year = "2006",
doi = "10.1063/1.2362978",
language = "English (US)",
volume = "89",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "16",
}