Direct strain measurement in a 65 nm node strained silicon transistor by convergent-beam electron diffraction

Physics & Astronomy

• silicon transistors 100%
• strain measurement 84%
• electron diffraction 61%
• p-type semiconductors 46%
• silicon 38%
• metal oxide semiconductors 36%
• metrology 35%
• lattice parameters 31%
• electron microscopes 28%
• field effect transistors 28%
• energy 10%