Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction

Physics & Astronomy

• design analysis 100%
• p-n junctions 78%
• transistors 60%
• fabrication 45%
• electrical faults 37%
• high current 34%
• performance 33%
• electrons 31%
• breakdown 29%
• conductivity 25%
• low resistance 21%
• ammonia 19%
• electron gas 17%
• metalorganic chemical vapor deposition 17%
• radiant flux density 17%
• heterojunctions 16%
• molecular beam epitaxy 16%
• apertures 14%
• electric fields 11%
• temperature 5%