Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction

Ramya Yeluri, Jing Lu, Christophe A. Hurni, David A. Browne, Srabanti Chowdhury, Stacia Keller, James S. Speck, Umesh K. Mishra

Research output: Contribution to journalArticle

44 Scopus citations

Abstract

The Current Aperture Vertical Electron Transistor (CAVET) combines the high conductivity of the two dimensional electron gas channel at the AlGaN/GaN heterojunction with better field distribution offered by a vertical design. In this work, CAVETs with buried, conductive p-GaN layers as the current blocking layer are reported. The p-GaN layer was regrown by metalorganic chemical vapor deposition and the subsequent channel regrowth was done by ammonia molecular beam epitaxy to maintain the p-GaN conductivity. Transistors with high ON current (10.9 kA/cm<sup>2</sup>) and low ON-resistance (0.4 mΩ cm<sup>2</sup>) are demonstrated. Non-planar selective area regrowth is identified as the limiting factor to transistor breakdown, using planar and non-planar n/p/n structures. Planar n/p/n structures recorded an estimated electric field of 3.1 MV/cm, while non-planar structures showed a much lower breakdown voltage. Lowering the p-GaN regrowth temperature improved breakdown in the non-planar n/p/n structure. Combining high breakdown voltage with high current will enable GaN vertical transistors with high power densities.

Original languageEnglish (US)
Article number183502
JournalApplied Physics Letters
Volume106
Issue number18
DOIs
StatePublished - May 4 2015

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Yeluri, R., Lu, J., Hurni, C. A., Browne, D. A., Chowdhury, S., Keller, S., Speck, J. S., & Mishra, U. K. (2015). Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction. Applied Physics Letters, 106(18), [183502]. https://doi.org/10.1063/1.4919866