Characterization of double stacking faults induced by thermal processing of heavily n-doped 4H-SiC substrates

Engineering & Materials Science

• Photoluminescence 97%
• Raman scattering 87%
• Stacking faults 86%
• Electrostatic force 81%
• Microscopic examination 65%
• Electrons 60%
• Epilayers 51%
• Imaging techniques 46%
• Substrates 42%
• Electric fields 27%
• Polarization 27%
• Temperature 12%

Physics & Astronomy

• crystal defects 59%
• Raman spectra 46%
• electrostatics 46%
• photoluminescence 42%
• microscopy 42%
• characterization 33%
• lamella 32%
• electrons 25%
• electric fields 17%
• polarization 16%
• simulation 11%

Chemical Compounds

• Electric Force Microscopy 100%
• Stacking Fault 82%
• Electron Particle 32%
• Photoluminescence Spectrum 29%
• Electric Field 27%
• Raman Spectrum 24%
• Photoluminescence 23%
• Polarization 22%
• Simulation 19%
• Surface 9%