Characterization of double stacking faults induced by thermal processing of heavily n-doped 4H-SiC substrates

Brian Skromme, M. K. Mikhov, L. Chen, G. Samson, R. Wang, C. Li, I. Bhat

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Abstract

Double stacking faults (3C lamellae) formed by thermal processing of heavily (∼3×1019 cm-3 n-type) doped 4H-SiC substrates, with or without lightly n-doped epilayers, are characterized by low temperature photoluminescence (PL), Raman scattering, secondary electron imaging (SEI), and electrostatic force microscopy (EFM). Electric fields are evident in the SEI and EFM images where the faults intersect the surface. Self-consistent simulations including spontaneous polarization explain several features observed in PL and Raman spectra.

Original languageEnglish (US)
Pages (from-to)581-584
Number of pages4
JournalMaterials Science Forum
Volume457-460
Issue numberI
Publication statusPublished - 2004

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Keywords

  • Electrostatic force microscopy
  • Heavy doping
  • Oxidation
  • Photoluminescence
  • Polytype transformation
  • Raman scattering
  • Secondary electron imaging
  • Stacking faults

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Skromme, B., Mikhov, M. K., Chen, L., Samson, G., Wang, R., Li, C., & Bhat, I. (2004). Characterization of double stacking faults induced by thermal processing of heavily n-doped 4H-SiC substrates. Materials Science Forum, 457-460(I), 581-584.