Characterization of double stacking faults induced by thermal processing of heavily n-doped 4H-SiC substrates

Brian Skromme; M. K. Mikhov; L. Chen; G. Samson; R. Wang; C. Li; I. Bhat

doi:10.4028/www.scientific.net/msf.457-460.581

Characterization of double stacking faults induced by thermal processing of heavily n-doped 4H-SiC substrates

Brian Skromme, M. K. Mikhov, L. Chen, G. Samson, R. Wang, C. Li, I. Bhat

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

Double stacking faults (3C lamellae) formed by thermal processing of heavily (∼3×10¹⁹ cm^-3 n-type) doped 4H-SiC substrates, with or without lightly n-doped epilayers, are characterized by low temperature photoluminescence (PL), Raman scattering, secondary electron imaging (SEI), and electrostatic force microscopy (EFM). Electric fields are evident in the SEI and EFM images where the faults intersect the surface. Self-consistent simulations including spontaneous polarization explain several features observed in PL and Raman spectra.

Original language	English (US)
Pages (from-to)	581-584
Number of pages	4
Journal	Materials Science Forum
Volume	457-460
Issue number	I
DOIs	https://doi.org/10.4028/www.scientific.net/msf.457-460.581
State	Published - Jan 1 2004
Event	Proceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, France Duration: Oct 5 2003 → Oct 10 2003

Keywords

Electrostatic force microscopy
Heavy doping
Oxidation
Photoluminescence
Polytype transformation
Raman scattering
Secondary electron imaging
Stacking faults

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Cite this

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title = "Characterization of double stacking faults induced by thermal processing of heavily n-doped 4H-SiC substrates",

abstract = "Double stacking faults (3C lamellae) formed by thermal processing of heavily (∼3×1019 cm-3 n-type) doped 4H-SiC substrates, with or without lightly n-doped epilayers, are characterized by low temperature photoluminescence (PL), Raman scattering, secondary electron imaging (SEI), and electrostatic force microscopy (EFM). Electric fields are evident in the SEI and EFM images where the faults intersect the surface. Self-consistent simulations including spontaneous polarization explain several features observed in PL and Raman spectra.",

keywords = "Electrostatic force microscopy, Heavy doping, Oxidation, Photoluminescence, Polytype transformation, Raman scattering, Secondary electron imaging, Stacking faults",

author = "Brian Skromme and Mikhov, {M. K.} and L. Chen and G. Samson and R. Wang and C. Li and I. Bhat",

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TY - JOUR

T1 - Characterization of double stacking faults induced by thermal processing of heavily n-doped 4H-SiC substrates

AU - Skromme, Brian

AU - Mikhov, M. K.

AU - Chen, L.

AU - Samson, G.

AU - Wang, R.

AU - Li, C.

AU - Bhat, I.

PY - 2004/1/1

Y1 - 2004/1/1

N2 - Double stacking faults (3C lamellae) formed by thermal processing of heavily (∼3×1019 cm-3 n-type) doped 4H-SiC substrates, with or without lightly n-doped epilayers, are characterized by low temperature photoluminescence (PL), Raman scattering, secondary electron imaging (SEI), and electrostatic force microscopy (EFM). Electric fields are evident in the SEI and EFM images where the faults intersect the surface. Self-consistent simulations including spontaneous polarization explain several features observed in PL and Raman spectra.

AB - Double stacking faults (3C lamellae) formed by thermal processing of heavily (∼3×1019 cm-3 n-type) doped 4H-SiC substrates, with or without lightly n-doped epilayers, are characterized by low temperature photoluminescence (PL), Raman scattering, secondary electron imaging (SEI), and electrostatic force microscopy (EFM). Electric fields are evident in the SEI and EFM images where the faults intersect the surface. Self-consistent simulations including spontaneous polarization explain several features observed in PL and Raman spectra.

KW - Electrostatic force microscopy

KW - Heavy doping

KW - Oxidation

KW - Photoluminescence

KW - Polytype transformation

KW - Raman scattering

KW - Secondary electron imaging

KW - Stacking faults

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T2 - Proceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003

Y2 - 5 October 2003 through 10 October 2003

ER -

Characterization of double stacking faults induced by thermal processing of heavily n-doped 4H-SiC substrates

Abstract

Keywords

ASJC Scopus subject areas

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