Anisotropic mesh refinement for the simulation of three-dimensional semiconductor manufacturing processes

Wilfried Wessner, Johann Cervenka, Clemens Heitzinger, Andreas Hössinger, Siegfried Selberherr

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

This paper presents an anisotropic adaptation strategy for three-dimensional unstructured tetrahedral meshes, which allows us to produce thin mostly anisotropic layers at the outside margin, i.e., the skin of an arbitrary meshed simulation domain. An essential task for any modern algorithm in the finite-element solution of partial differential equations, especially in the field of semiconductor process and device simulation, the major application is to provide appropriate resolution of the partial discretization mesh. The start-up conditions for semiconductor process and device simulations claim an initial mesh preparation that is performed by so-called Laplace refinement. The basic idea is to solve Laplace's equation on an initial coarse mesh with Dirichlet boundary conditions. Afterward, the gradient field is used to form an anisotropic metric that allows to refine the initial mesh based on tetrahedral bisection.

Original languageEnglish (US)
Article number1677696
Pages (from-to)2129-2138
Number of pages10
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume25
Issue number10
DOIs
StatePublished - Oct 1 2006

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Keywords

  • Anisotropy
  • Mesh refinement
  • Tetrahedral bisection
  • Tetrahedral meshes

ASJC Scopus subject areas

  • Software
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering

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