Analysis of electron transport in a high-mobility freestanding GaN substrate grown by hydride vapor-phase epitaxy

Engineering & Materials Science

• Vapor phase epitaxy 100%
• Electron Transport 90%
• Hydrides 71%
• Hall mobility 45%
• Substrates 39%
• Carrier concentration 32%
• Sapphire 30%
• Electron scattering 20%
• Lattice mismatch 20%
• Phonons 17%
• Electron mobility 17%
• Point defects 17%
• Defect density 16%
• Raman spectroscopy 15%
• Transport properties 14%
• Nitrides 13%
• Etching 12%
• Activation energy 11%
• Scattering 10%
• Vapors 10%
• Semiconductor materials 10%
• Defects 7%

Chemical Compounds

• Vapor Phase Epitaxy 89%
• Electron Transport 55%
• Hydride 47%
• Compound Mobility 43%
• LO Phonon 24%
• Electron Scattering 22%
• Donor 19%
• Crystal Point Defect 18%
• Electron Mobility 16%
• Phonon 15%
• Nitride 13%
• Transport Property 13%
• Etching 12%
• Semiconductor 10%
• Raman Spectroscopy 10%
• Reaction Activation Energy 9%
• Liquid Film 6%
• Energy 6%
• Reaction Yield 5%
• Surface 4%

Physics & Astronomy

• vapor phase epitaxy 58%
• hydrides 57%
• templates 35%
• electrons 23%
• sapphire 16%
• Boltzmann transport equation 11%
• defects 10%
• electron mobility 9%
• wurtzite 9%
• point defects 8%
• nitrides 8%
• electron scattering 8%
• Raman spectroscopy 8%
• vapor phases 7%
• transport properties 7%
• etching 7%
• activation energy 6%
• phonons 6%
• scattering 4%
• energy 2%