Abstract

Reliability simulations are critical for lifetime prediction and verification of long-term performance of integrated circuits designed in advanced CMOS technologies. The existing techniques for reliability simulation model aging effects using threshold voltage (Vth) shifts that do not reflect the bias-dependence of stress-induced defects. In this work we present a defect-based modeling approach that captures the dynamic effects of both oxide-trapped charge and interface traps through calculations of surface potential. Such defects are attributed to aging effects and to ionizing-radiation damage in advanced CMOS technologies. The approach provides a connection between physics-based reliability models and integrated circuit simulation. The model is implemented as a Verilog-A sub-circuit module and is compatible with standard EDA tools and MOSFET compact models. The model formulation is verified using two-dimensional TCAD simulations. Demonstrations with digital integrated circuit simulations in SPICE and comparisons with calculations using Vth-based models are also presented.

Original languageEnglish (US)
Pages (from-to)81-86
Number of pages6
JournalSolid-State Electronics
Volume91
DOIs
StatePublished - 2014

Fingerprint

integrated circuits
Integrated circuits
CMOS
Defects
defects
Circuit simulation
simulation
Aging of materials
Digital integrated circuits
Computer hardware description languages
Ionizing radiation
Radiation damage
Surface potential
SPICE
Threshold voltage
radiation damage
ionizing radiation
threshold voltage
Oxides
Demonstrations

Keywords

  • CMOS
  • Interface traps
  • NBTI
  • Oxide-trapped charge
  • Reliability
  • Surface potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

A defect-based compact modeling approach for the reliability of CMOS devices and integrated circuits. / Esqueda, Ivan S.; Barnaby, Hugh.

In: Solid-State Electronics, Vol. 91, 2014, p. 81-86.

Research output: Contribution to journalArticle

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