Abstract
AlGaN/GaN HEMTs grown on both-side-polished sapphire substrates were successfully lifted-off with a 193-nm UV excimer laser system. The photon energy of the 193 nm laser is larger than the band gap of AlN and thus it can be used to lift-off AlGaN HEMT structures with AlN or AlGaN interfacial layers grown on sapphire substrates prior to growth of the GaN buffer layers. The lifted-off HEMT chip was warped and showed 25-42 reduction of the saturation drain current. There was no degradation observed either in the forward or reverse gate current-voltage (I-V) characteristics or on the drain punch-through voltage. Based on comparisons of cross-sectional electron micrographs, no additional dislocations were created in the HEMT structures after the laser lift-off process. Reduction in saturation drain current was attributed to relaxation of the lifted-off HEMT structures. Newtons rings and Raman spectrum E2 peak shifts were used to estimate the strain relaxation of the laser lifted-off samples.
| Original language | English (US) |
|---|---|
| Article number | 051209 |
| Journal | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics |
| Volume | 30 |
| Issue number | 5 |
| DOIs | |
| State | Published - 2012 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
193 nm excimer laser lift-off for AlGaN/GaN high electron mobility transistors. / Wang, Xiaotie; Lo, Chien Fong; Liu, Lu; Cuervo, Camilo V.; Fan, Ren; Pearton, Stephen J.; Gila, Brent; Johnson, Michael R.; Zhou, Lin; Smith, David; Kim, Jihyun; Laboutin, Oleg; Cao, Yu; Johnson, Jerry W.
In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 30, No. 5, 051209, 2012.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - 193 nm excimer laser lift-off for AlGaN/GaN high electron mobility transistors
AU - Wang, Xiaotie
AU - Lo, Chien Fong
AU - Liu, Lu
AU - Cuervo, Camilo V.
AU - Fan, Ren
AU - Pearton, Stephen J.
AU - Gila, Brent
AU - Johnson, Michael R.
AU - Zhou, Lin
AU - Smith, David
AU - Kim, Jihyun
AU - Laboutin, Oleg
AU - Cao, Yu
AU - Johnson, Jerry W.
PY - 2012
Y1 - 2012
N2 - AlGaN/GaN HEMTs grown on both-side-polished sapphire substrates were successfully lifted-off with a 193-nm UV excimer laser system. The photon energy of the 193 nm laser is larger than the band gap of AlN and thus it can be used to lift-off AlGaN HEMT structures with AlN or AlGaN interfacial layers grown on sapphire substrates prior to growth of the GaN buffer layers. The lifted-off HEMT chip was warped and showed 25-42 reduction of the saturation drain current. There was no degradation observed either in the forward or reverse gate current-voltage (I-V) characteristics or on the drain punch-through voltage. Based on comparisons of cross-sectional electron micrographs, no additional dislocations were created in the HEMT structures after the laser lift-off process. Reduction in saturation drain current was attributed to relaxation of the lifted-off HEMT structures. Newtons rings and Raman spectrum E2 peak shifts were used to estimate the strain relaxation of the laser lifted-off samples.
AB - AlGaN/GaN HEMTs grown on both-side-polished sapphire substrates were successfully lifted-off with a 193-nm UV excimer laser system. The photon energy of the 193 nm laser is larger than the band gap of AlN and thus it can be used to lift-off AlGaN HEMT structures with AlN or AlGaN interfacial layers grown on sapphire substrates prior to growth of the GaN buffer layers. The lifted-off HEMT chip was warped and showed 25-42 reduction of the saturation drain current. There was no degradation observed either in the forward or reverse gate current-voltage (I-V) characteristics or on the drain punch-through voltage. Based on comparisons of cross-sectional electron micrographs, no additional dislocations were created in the HEMT structures after the laser lift-off process. Reduction in saturation drain current was attributed to relaxation of the lifted-off HEMT structures. Newtons rings and Raman spectrum E2 peak shifts were used to estimate the strain relaxation of the laser lifted-off samples.
UR - http://www.scopus.com/inward/record.url?scp=84866480053&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84866480053&partnerID=8YFLogxK
U2 - 10.1116/1.4751278
DO - 10.1116/1.4751278
M3 - Article
AN - SCOPUS:84866480053
VL - 30
JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
SN - 2166-2746
IS - 5
M1 - 051209
ER -