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Research Output 1990 2019

  • 814 Citations
  • 16 h-Index
  • 80 Article
  • 49 Conference contribution
2019

Assessment of self-heating effects under lateral scaling of GaN HEMTs

Latorre-Rey, A. D., Merrill, K., Albrecht, J. D. & Saraniti, M., Feb 1 2019, In : IEEE Transactions on Electron Devices. 66, 2, p. 908-916 9 p., 8601308.

Research output: Contribution to journalArticle

High electron mobility transistors
Heating
Electric fields
Phonons
Energy balance
2018
3 Citations (Scopus)

A π-Shaped Gate Design for Reducing Hot-Electron Generation in GaN HEMTs

Latorre-Rey, A. D., Albrecht, J. D. & Saraniti, M., Aug 24 2018, (Accepted/In press) In : IEEE Transactions on Electron Devices.

Research output: Contribution to journalArticle

Hot electrons
High electron mobility transistors
Hot carriers
Millimeter waves
Distribution functions

Multiscale Coupled Electro-Thermal Simulations of Electron Devices

Merrill, K. & Saraniti, M., Dec 27 2018, THERMINIC 2018 - 24th International Workshop on Thermal Investigations of ICs and Systems, Proceedings. Institute of Electrical and Electronics Engineers Inc., 8593320. (THERMINIC 2018 - 24th International Workshop on Thermal Investigations of ICs and Systems, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electron devices
thermal simulation
electrons
Temperature
temperature
2017
3 Citations (Scopus)

Electro-thermal characterization of GaN HEMT on Si through self-consistent energy balance-cellular Monte Carlo device simulations

Latorre-Rey, A. D., Merrill, K., Albrecht, J. D. & Saraniti, M., Dec 26 2017, 2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017. Institute of Electrical and Electronics Engineers Inc., Vol. 2017-January. p. 1-4 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
Energy balance
high electron mobility transistors
Heating
heating
2 Citations (Scopus)

Generation of hot electrons in GaN HEMTs under RF Class A and AB PAs

Latorre-Rey, A. D., Albrecht, J. D. & Saraniti, M., Aug 1 2017, 75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc., 7999436

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hot electrons
High electron mobility transistors
Power amplifiers
Hot carriers
Distribution functions

Momentum Space Engineering of GaN HETs for RF Applications Through Full-Band Monte Carlo Simulations

Soligo, R., Sabatti, F., Chowdhury, S. & Saraniti, M., Oct 6 2017, (Accepted/In press) In : IEEE Transactions on Electron Devices.

Research output: Contribution to journalArticle

Aerospace engineering
Hot electrons
Momentum
Transistors
Satellites
1 Citation (Scopus)
Scattering
Semiconductor materials
Phonons
scattering
phonons
2016
2 Citations (Scopus)

A fully online accredited undergraduate electrical engineering program

Phillips, S. & Saraniti, M., Jun 26 2016, 2016 ASEE Annual Conference and Exposition. American Society for Engineering Education, Vol. 2016-June.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electrical engineering
Students
Accreditation
Curricula
Industry

Carrier relaxation and impact ionization in core-shell III-V nanowires

Hathwar, R., Saraniti, M. & Goodnick, S., Nov 21 2016, 16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., p. 832-835 4 p. 7751540

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Impact ionization
Nanowires
nanowires
ionization
Energy gap

Modeling of multi-band drift in nanowires using a full band Monte Carlo simulation

Hathwar, R., Saraniti, M. & Goodnick, S., Jul 28 2016, In : Journal of Applied Physics. 120, 4, 044307.

Research output: Contribution to journalArticle

nanowires
simulation
Runge-Kutta method
Brillouin zones
electric fields
2015
3 Citations (Scopus)

Energy Relaxation and Non-linear Transport in InAs Nanowires

Hathwar, R., Saraniti, M. & Goodnick, S., Oct 13 2015, In : Journal of Physics: Conference Series. 647, 1, 012029.

Research output: Contribution to journalArticle

nanowires
relaxation time
scattering
energy
electron energy
1 Citation (Scopus)

Full-band 3-D Monte Carlo simulation of InAs nanowires and high frequency analysis

Popescu, B., Popescu, D., Saraniti, M. & Lugli, P., Jun 1 2015, In : IEEE Transactions on Electron Devices. 62, 6, p. 1848-1854 7 p., 7102727.

Research output: Contribution to journalArticle

Nanowires
Signal analysis
Frequency response
Transistors
Cutoff frequency
2 Citations (Scopus)

The Role of the Base Stack on the AC Performance of GaN Hot Electron Transistor

Soligo, R., Chowdhury, S., Gupta, G., Mishra, U. & Saraniti, M., Jul 1 2015, In : IEEE Electron Device Letters. 36, 7, p. 669-671 3 p., 7112128.

Research output: Contribution to journalArticle

Hot electrons
Cutoff frequency
Transistors
Short circuit currents
Amplification
2014
4 Citations (Scopus)

Avalanche breakdown in SOI MESFETs

Lepkowski, W., Wilk, S. J., Parsi, A., Saraniti, M., Ferry, D. & Thornton, T., 2014, In : Solid-State Electronics. 91, p. 78-80 3 p.

Research output: Contribution to journalArticle

MISFET devices
MESFET devices
MIS (semiconductors)
Silicon
avalanches
3 Citations (Scopus)

Full band monte carlo simulation of In0.7Ga0.3As junctionless nanowire field effect transistors

Hathwar, R., Saraniti, M. & Goodnick, S., Nov 26 2014, 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014. Institute of Electrical and Electronics Engineers Inc., p. 645-649 5 p. 6968090

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Field-effect Transistor
Nanowires
Field effect transistors
nanowires
field effect transistors

Terahertz devices and device modeling

Soligo, R., Saraniti, M. & Goodnick, S., 2014, Proceedings of SPIE - The International Society for Optical Engineering. SPIE, Vol. 9083. 90830B

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
high electron mobility transistors
UHF devices
Physics
Electron

X-parameters and efficient physical device simulation of mm-wave power transistors with harmonic loading

Guerra, D., Saraniti, M., Ferry, D. K. & Goodnick, S., 2014, IEEE MTT-S International Microwave Symposium Digest. Institute of Electrical and Electronics Engineers Inc., 6848583

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wave power
transistors
Simulators
harmonics
Parameter extraction
2013

Incorporating 2D quantum effects into full band Monte Carlo simulations of QWFETs

Marino, F. A., Tierney, B., Akis, R., Saraniti, M. & Goodnick, S., 2013, Proceedings of the IEEE Conference on Nanotechnology. p. 67-70 4 p. 6721009

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Field effect transistors
Semiconductor quantum wells
field effect transistors
Simulators
quantum wells
3 Citations (Scopus)

Linearity analysis of millimeter wave GaN power transistors through X-parameters and TCAD device simulations

Guerra, D., Saraniti, M., Ferry, D. K. & Goodnick, S., 2013, IEEE MTT-S International Microwave Symposium Digest. 6697725

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wave power
Millimeter waves
millimeter waves
linearity
transistors
2012
3 Citations (Scopus)

Cellular Monte Carlo study lateral scaling impact of on the DC-RF performance of high-power GaN HEMTs

Soligo, R., Guerra, D., Ferry, D. K., Goodnick, S. & Saraniti, M., 2012, 2012 15th International Workshop on Computational Electronics, IWCE 2012. 6242863

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Drain current
Transconductance
High electron mobility transistors
Millimeter waves
Frequency response
3 Citations (Scopus)

Millimeter-wave power amplifier circuit-device simulations through coupled Harmonic Balance-Monte Carlo particle-based device simulator

Guerra, D., Ferry, D. K., Saraniti, M. & Goodnick, S., 2012, IEEE MTT-S International Microwave Symposium Digest. 6258430

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wave power
power amplifiers
Field effect transistors
Power amplifiers
Millimeter waves
3 Citations (Scopus)

Modeling and simulation of terahertz devices

Goodnick, S. & Saraniti, M., 2012, In : IEEE Microwave Magazine. 13, 7, p. 36-44 9 p., 6355782.

Research output: Contribution to journalArticle

Terahertz spectroscopy
Submillimeter waves
submillimeter waves
solid state
simulation
1 Citation (Scopus)

Simulating InP-based composite channel p-HEMTs with ultrashort gates for THz applications

Akis, R., Soligo, R., Marino, F. A., Ferry, D. K., Goodnick, S. & Saraniti, M., 2012, Proceedings of the IEEE Conference on Nanotechnology. 6322205

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Impact ionization
Cutoff frequency
Tunnels
Transistors
transistors
2011
10 Citations (Scopus)

Carrier dynamics investigation on passivation dielectric constant and RF performance of millimeter-wave power GaN HEMTs

Guerra, D., Saraniti, M., Ferry, D. K., Goodnick, S. & Marino, F. A., Nov 2011, In : IEEE Transactions on Electron Devices. 58, 11, p. 3876-3884 9 p., 6024451.

Research output: Contribution to journalArticle

Wave power
Millimeter waves
Passivation
Permittivity
Theophylline

Extraction of gate capacitance of high-frequency and high-power GaN HEMTs by means of cellular Monte Carlo simulations

Guerra, D., Marino, F. ALESSIO., Goodnick, S., Ferry, D. & Saraniti, M., Sep 2011, In : International Journal of High Speed Electronics and Systems. 20, 3, p. 423-430 8 p.

Research output: Contribution to journalArticle

Capacitance
Simulators
Signal analysis
Monte Carlo simulation
Power HEMT
3 Citations (Scopus)

Large-signal full-band Monte Carlo device simulation of millimeter-wave power GaN HEMTs with the inclusion of parasitic and reliability issues

Guerra, D., Ferry, D. K., Goodnick, S., Saraniti, M. & Marino, F. A., 2011, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. p. 87-90 4 p. 6035056

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Device Simulation
Wave power
Millimeter Wave
Power amplifiers
Millimeter waves
3 Citations (Scopus)

Large-signal mm-wave InAlN/GaN HEMT power amplifier characterization through self-consistent harmonic balance/cellular Monte Carlo device simulation

Guerra, D., Marino, F. A., Ferry, D. K., Goodnick, S., Saraniti, M. & Soligo, R., 2011, Technical Digest - International Electron Devices Meeting, IEDM. 6131668

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
power amplifiers
Field effect transistors
high electron mobility transistors
Power amplifiers

Terahertz-capability nanoscale InGaAs HEMT design guidelines by means of full-band Monte Carlo device simulations

Guerra, D., Marino, F. A., Akis, R., Ferry, D. K., Goodnick, S. & Saraniti, M., 2011, 2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2011 - Digest of Papers. p. 193-196 4 p. 5719347

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
Aspect ratio
Simulators
Electrons
2010
30 Citations (Scopus)

Aspect ratio impact on RF and DC performance of state-of-the-art short-channel GaN and InGaAs HEMTs

Guerra, D., Akis, R., Marino, F. A., Ferry, D. K., Goodnick, S. & Saraniti, M., Nov 2010, In : IEEE Electron Device Letters. 31, 11, p. 1217-1219 3 p., 5585697.

Research output: Contribution to journalArticle

High electron mobility transistors
Aspect ratio
Band structure
Permittivity
Simulators
1 Citation (Scopus)

Brownian Dynamics study of the effects of dielectric constant on conductivity of porins

Smolyanitsky, A., Aboud, S. & Saraniti, M., Dec 2010, In : Journal of Computational and Theoretical Nanoscience. 7, 12, p. 2543-2546 4 p.

Research output: Contribution to journalArticle

Ionic conduction
Porins
Brownian Dynamics
Dielectric Constant
Poisson equation

Catalytic surfaces of silicon nanopores, a brownian dynamics study

Ramaprasad, P., Goodnick, S. & Saraniti, M., 2010, 2010 14th International Workshop on Computational Electronics, IWCE 2010. p. 137-140 4 p. 5677998

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nanopores
Surface charge
Silicon
Silica
Numerical models

Cellular Monte Carlo investigation of InAs and InGaAs quantum well field effect transistors

Marino, F. A., Guerra, D., Ferry, D. K., Goodnick, S. & Saraniti, M., 2010, 2010 14th International Workshop on Computational Electronics, IWCE 2010. p. 109-112 4 p. 5678003

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electron mobility
Field effect transistors
Band structure
Semiconductor quantum wells
Simulators
1 Citation (Scopus)

Cellular Monte Carlo study of RF short-channel effects, effective gate length, and aspect ratio in GaN and InGaAs HEMTs

Guerra, D., Akis, R., Ferry, D. K., Goodnick, S., Saraniti, M. & Marino, F. A., 2010, 2010 14th International Workshop on Computational Electronics, IWCE 2010. p. 105-108 4 p. 5678006

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
Aspect ratio
Electrons
Signal analysis
Cutoff frequency
14 Citations (Scopus)

Comparison of N- and Ga-face GaN HEMTs through cellular Monte Carlo simulations

Guerra, D., Saraniti, M., Faralli, N., Ferry, D. K., Goodnick, S. & Marino, F. A., Dec 2010, In : IEEE Transactions on Electron Devices. 57, 12, p. 3348-3354 7 p., 5595023.

Research output: Contribution to journalArticle

High electron mobility transistors
Simulators
Electron gas
Cutoff frequency
Band structure
64 Citations (Scopus)

Effects of threading dislocations on AlGaN/GaN high-electron mobility transistors

Marino, F. A., Faralli, N., Palacios, T., Ferry, D. K., Goodnick, S. & Saraniti, M., Jan 2010, In : IEEE Transactions on Electron Devices. 57, 1, p. 353-360 8 p., 5339189.

Research output: Contribution to journalArticle

High electron mobility transistors
Transistors
Simulators
Edge dislocations
Band structure
8 Citations (Scopus)

Emerging N-face GaN HEMT technology: A cellular Monte Carlo study

Marino, F. A., Saraniti, M., Faralli, N., Ferry, D. K., Goodnick, S. & Guerra, D., Oct 2010, In : IEEE Transactions on Electron Devices. 57, 10, p. 2579-2586 8 p., 5549880.

Research output: Contribution to journalArticle

High electron mobility transistors
Simulators
Millimeter waves
Band structure
Microwaves
28 Citations (Scopus)

Field effect modulation of ionic conductance of cylindrical silicon-on-insulator nanopore array

Joshi, P., Smolyanitsky, A., Petrossian, L., Goryll, M., Saraniti, M. & Thornton, T., 2010, In : Journal of Applied Physics. 107, 5, 054701.

Research output: Contribution to journalArticle

insulators
modulation
silicon
electrolytes

Optimizing performance to achieve multi-terahertz operating frequencies in pseudomorphic HEMTs

Akis, R., Faralli, N., Goodnick, S., Ferry, D. K. & Saraniti, M., Oct 2010, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 7, 10, p. 2502-2505 4 p.

Research output: Contribution to journalArticle

high electron mobility transistors
power gain
cut-off
spacing
oscillations

Reliability assessment of state-of-the-art GaN HEMT by means of cellular Monte Carlo Simulation

Marino, F. A., Guerra, D., Goodnick, S. & Saraniti, M., 2010, IEEE International Reliability Physics Symposium Proceedings. p. 516-521 6 p. 5488779

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
Edge dislocations
Monte Carlo simulation

RF and DC characterization of state-of-the-art GaN HEMT devices through cellular Monte Carlo simulations

Marino, F. A., Guerra, D., Goodnick, S., Ferry, D. & Saraniti, M., Oct 2010, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 7, 10, p. 2445-2449 5 p.

Research output: Contribution to journalArticle

high electron mobility transistors
direct current
simulators
simulation
transport properties
15 Citations (Scopus)
high electron mobility transistors
holography
polarization
electrons
simulation
2009
5 Citations (Scopus)

Ballistic transport in InP-based HEMTs

Akis, R., Faralli, N., Ferry, D. K., Goodnick, S., Phatak, K. A. & Saraniti, M., Dec 2009, In : IEEE Transactions on Electron Devices. 56, 12, p. 2935-2944 10 p., 5299052.

Research output: Contribution to journalArticle

High electron mobility transistors
Ballistics
Scattering
Semiconductor devices
Band structure
9 Citations (Scopus)

Figures of merit in high-frequency and high-power GaN HEMTs

Marino, F. A., Faralli, N., Ferry, D. K., Goodnick, S. & Saraniti, M., 2009, In : Journal of Physics: Conference Series. 193, 012040.

Research output: Contribution to journalArticle

high electron mobility transistors
figure of merit
cut-off
electrical faults
Fourier analysis
2 Citations (Scopus)

Physical modeling of microwave transistors using a full-band/full-wave simulation approach

Ayubi-Moak, J. S., Akis, R., Saraniti, M., Ferry, D. K. & Goodnick, S., 2009, Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009. 5091139

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Parameter extraction
Scattering parameters
Frequency response
Transistors
Simulators
17 Citations (Scopus)

Rigid ion model of high field transport inGaN

Yamakawa, S., Akis, R., Faralli, N., Saraniti, M. & Goodnick, S., 2009, In : Journal of Physics Condensed Matter. 21, 17, 174206.

Research output: Contribution to journalArticle

Phonons
Ions
phonons
velocity distribution
ions
4 Citations (Scopus)

Silicon nanopores as bioelectronic devices: A simulation study

Smolyanitsky, A. & Saraniti, M., 2009, In : Journal of Computational Electronics. 8, 2, p. 90-97 8 p.

Research output: Contribution to journalArticle

Nanopore
Nanopores
Silicon
Simulation Study
silicon
2008
3 Citations (Scopus)

Artificial cells: Designing biomimetic nanomachines

Saraniti, M., Nov 2008, In : Nature Nanotechnology. 3, 11, p. 647-648 2 p.

Research output: Contribution to journalArticle

biomimetics
Biomimetics
cells
6 Citations (Scopus)

Full-band cellular Monte Carlo simulations of terahertz high electron mobility transistors

Akis, R., Ayubi-Moak, J. S., Ferry, D. K., Goodnick, S., Faralli, N. & Saraniti, M., Sep 24 2008, In : Journal of Physics Condensed Matter. 20, 38, 384201.

Research output: Contribution to journalArticle

High electron mobility transistors
high electron mobility transistors
Cutoff frequency
Semiconductor quantum wells
simulation
4 Citations (Scopus)

Full-band CMC simulations of terahertz HEMTs

Ferry, K., Ayubi-Moak, J., Akis, R., Faralli, N., Saraniti, M. & Goodnick, S., Mar 1 2008, In : Journal of Physics: Conference Series. 109, 1, 012001.

Research output: Contribution to journalArticle

high electron mobility transistors
simulation
low noise
spacing
quantum wells

Full band Monte Carlo simulation of dislocation effects on 250 nm AlGaN-GaN HEMT

Vitobello, F., Faralli, N., Yamakawa, S., Goodnick, S. & Saraniti, M., 2008, In : Journal of Computational Electronics. 7, 3, p. 244-247 4 p.

Research output: Contribution to journalArticle

AlGaN
High electron mobility transistors
high electron mobility transistors
Dislocation
Monte Carlo Simulation