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Article
2019

Assessment of self-heating effects under lateral scaling of GaN HEMTs

Latorre-Rey, A. D., Merrill, K., Albrecht, J. D. & Saraniti, M., Feb 1 2019, In : IEEE Transactions on Electron Devices. 66, 2, p. 908-916 9 p., 8601308.

Research output: Contribution to journalArticle

2 Scopus citations
2018

A π-Shaped Gate Design for Reducing Hot-Electron Generation in GaN HEMTs

Latorre-Rey, A. D., Albrecht, J. D. & Saraniti, M., Aug 24 2018, (Accepted/In press) In : IEEE Transactions on Electron Devices.

Research output: Contribution to journalArticle

3 Scopus citations
2017

Momentum Space Engineering of GaN HETs for RF Applications Through Full-Band Monte Carlo Simulations

Soligo, R., Sabatti, F., Chowdhury, S. & Saraniti, M., Oct 6 2017, (Accepted/In press) In : IEEE Transactions on Electron Devices.

Research output: Contribution to journalArticle

1 Scopus citations
2016

Modeling of multi-band drift in nanowires using a full band Monte Carlo simulation

Hathwar, R., Saraniti, M. & Goodnick, S., Jul 28 2016, In : Journal of Applied Physics. 120, 4, 044307.

Research output: Contribution to journalArticle

1 Scopus citations
2015

Energy Relaxation and Non-linear Transport in InAs Nanowires

Hathwar, R., Saraniti, M. & Goodnick, S., Oct 13 2015, In : Journal of Physics: Conference Series. 647, 1, 012029.

Research output: Contribution to journalArticle

3 Scopus citations

Full-band 3-D Monte Carlo simulation of InAs nanowires and high frequency analysis

Popescu, B., Popescu, D., Saraniti, M. & Lugli, P., Jun 1 2015, In : IEEE Transactions on Electron Devices. 62, 6, p. 1848-1854 7 p., 7102727.

Research output: Contribution to journalArticle

1 Scopus citations

The Role of the Base Stack on the AC Performance of GaN Hot Electron Transistor

Soligo, R., Chowdhury, S., Gupta, G., Mishra, U. & Saraniti, M., Jul 1 2015, In : IEEE Electron Device Letters. 36, 7, p. 669-671 3 p., 7112128.

Research output: Contribution to journalArticle

2 Scopus citations
2014

Avalanche breakdown in SOI MESFETs

Lepkowski, W., Wilk, S. J., Parsi, A., Saraniti, M., Ferry, D. & Thornton, T., Jan 1 2014, In : Solid-State Electronics. 91, p. 78-80 3 p.

Research output: Contribution to journalArticle

4 Scopus citations
2012

Modeling and simulation of terahertz devices

Goodnick, S. & Saraniti, M., Dec 4 2012, In : IEEE Microwave Magazine. 13, 7, p. 36-44 9 p., 6355782.

Research output: Contribution to journalArticle

3 Scopus citations
2011

Carrier dynamics investigation on passivation dielectric constant and RF performance of millimeter-wave power GaN HEMTs

Guerra, D., Saraniti, M., Ferry, D. K., Goodnick, S. & Marino, F. A., Nov 1 2011, In : IEEE Transactions on Electron Devices. 58, 11, p. 3876-3884 9 p., 6024451.

Research output: Contribution to journalArticle

10 Scopus citations

Extraction of gate capacitance of high-frequency and high-power GaN HEMTs by means of cellular Monte Carlo simulations

Guerra, D., Marino, F. ALESSIO., Goodnick, S., Ferry, D. & Saraniti, M., Sep 1 2011, In : International Journal of High Speed Electronics and Systems. 20, 3, p. 423-430 8 p.

Research output: Contribution to journalArticle

2010

Aspect ratio impact on RF and DC performance of state-of-the-art short-channel GaN and InGaAs HEMTs

Guerra, D., Akis, R., Marino, F. A., Ferry, D. K., Goodnick, S. & Saraniti, M., Nov 1 2010, In : IEEE Electron Device Letters. 31, 11, p. 1217-1219 3 p., 5585697.

Research output: Contribution to journalArticle

32 Scopus citations

Brownian Dynamics study of the effects of dielectric constant on conductivity of porins

Smolyanitsky, A., Aboud, S. & Saraniti, M., Dec 1 2010, In : Journal of Computational and Theoretical Nanoscience. 7, 12, p. 2543-2546 4 p.

Research output: Contribution to journalArticle

1 Scopus citations

Comparison of N- and Ga-face GaN HEMTs through cellular Monte Carlo simulations

Guerra, D., Saraniti, M., Faralli, N., Ferry, D. K., Goodnick, S. & Marino, F. A., Dec 1 2010, In : IEEE Transactions on Electron Devices. 57, 12, p. 3348-3354 7 p., 5595023.

Research output: Contribution to journalArticle

14 Scopus citations

Effects of threading dislocations on AlGaN/GaN high-electron mobility transistors

Marino, F. A., Faralli, N., Palacios, T., Ferry, D. K., Goodnick, S. & Saraniti, M., Jan 1 2010, In : IEEE Transactions on Electron Devices. 57, 1, p. 353-360 8 p., 5339189.

Research output: Contribution to journalArticle

69 Scopus citations

Emerging N-face GaN HEMT technology: A cellular Monte Carlo study

Marino, F. A., Saraniti, M., Faralli, N., Ferry, D. K., Goodnick, S. & Guerra, D., Oct 1 2010, In : IEEE Transactions on Electron Devices. 57, 10, p. 2579-2586 8 p., 5549880.

Research output: Contribution to journalArticle

8 Scopus citations

Field effect modulation of ionic conductance of cylindrical silicon-on-insulator nanopore array

Joshi, P., Smolyanitsky, A., Petrossian, L., Goryll, M., Saraniti, M. & Thornton, T., Mar 26 2010, In : Journal of Applied Physics. 107, 5, 054701.

Research output: Contribution to journalArticle

28 Scopus citations

Optimizing performance to achieve multi-terahertz operating frequencies in pseudomorphic HEMTs

Akis, R., Faralli, N., Goodnick, S., Ferry, D. K. & Saraniti, M., Oct 1 2010, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 7, 10, p. 2502-2505 4 p.

Research output: Contribution to journalArticle

RF and DC characterization of state-of-the-art GaN HEMT devices through cellular Monte Carlo simulations

Marino, F. A., Guerra, D., Goodnick, S., Ferry, D. & Saraniti, M., Oct 1 2010, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 7, 10, p. 2445-2449 5 p.

Research output: Contribution to journalArticle

Simulation of polarization charge on AlGaN/GaN high electron mobility transistors: Comparison to electron holography

Marino, F. A., Cullen, D. A., Smith, D., McCartney, M. & Saraniti, M., Mar 26 2010, In : Journal of Applied Physics. 107, 5, 054516.

Research output: Contribution to journalArticle

16 Scopus citations
2009

Ballistic transport in InP-based HEMTs

Akis, R., Faralli, N., Ferry, D. K., Goodnick, S., Phatak, K. A. & Saraniti, M., Dec 1 2009, In : IEEE Transactions on Electron Devices. 56, 12, p. 2935-2944 10 p., 5299052.

Research output: Contribution to journalArticle

6 Scopus citations

Figures of merit in high-frequency and high-power GaN HEMTs

Marino, F. A., Faralli, N., Ferry, D. K., Goodnick, S. & Saraniti, M., Jan 1 2009, In : Journal of Physics: Conference Series. 193, 012040.

Research output: Contribution to journalArticle

9 Scopus citations

Rigid ion model of high field transport inGaN

Yamakawa, S., Akis, R., Faralli, N., Saraniti, M. & Goodnick, S., May 11 2009, In : Journal of Physics Condensed Matter. 21, 17, 174206.

Research output: Contribution to journalArticle

17 Scopus citations

Silicon nanopores as bioelectronic devices: A simulation study

Smolyanitsky, A. & Saraniti, M., Jul 13 2009, In : Journal of Computational Electronics. 8, 2, p. 90-97 8 p.

Research output: Contribution to journalArticle

4 Scopus citations
2008

Full-band cellular Monte Carlo simulations of terahertz high electron mobility transistors

Akis, R., Ayubi-Moak, J. S., Ferry, D. K., Goodnick, S., Faralli, N. & Saraniti, M., Sep 24 2008, In : Journal of Physics Condensed Matter. 20, 38, 384201.

Research output: Contribution to journalArticle

7 Scopus citations

Full-band CMC simulations of terahertz HEMTs

Ferry, K., Ayubi-Moak, J., Akis, R., Faralli, N., Saraniti, M. & Goodnick, S., Mar 1 2008, In : Journal of Physics: Conference Series. 109, 1, 012001.

Research output: Contribution to journalArticle

4 Scopus citations

Full band Monte Carlo simulation of dislocation effects on 250 nm AlGaN-GaN HEMT

Vitobello, F., Faralli, N., Yamakawa, S., Goodnick, S. & Saraniti, M., Feb 13 2008, In : Journal of Computational Electronics. 7, 3, p. 244-247 4 p.

Research output: Contribution to journalArticle

The upper limit of the cutoff frequency in ultrashort gate-length InGaAs/ InAlAs HEMTs: A new definition of effective gate length

Akis, R., Ayubi-Moak, J. S., Faralli, N., Ferry, D. K., Goodnick, S. & Saraniti, M., Apr 1 2008, In : IEEE Electron Device Letters. 29, 4, p. 306-308 3 p.

Research output: Contribution to journalArticle

40 Scopus citations

Towards the global modeling of InGaAs-based pseudomorphic HEMTs

Ayubi-Moak, J. S., Akis, R., Ferry, D. K., Goodnick, S., Faralli, N. & Saraniti, M., Feb 15 2008, In : Journal of Computational Electronics. 7, 3, p. 187-191 5 p.

Research output: Contribution to journalArticle

8 Scopus citations
2007

Brownian dynamics simulation of charge transport in ion channels

Marreiro, D., Saraniti, M. & Aboud, S., May 30 2007, In : Journal of Physics Condensed Matter. 19, 21, 215203.

Research output: Contribution to journalArticle

12 Scopus citations

Improving the efficiency of BD algorithms for biological systems simulations

Marreiro, D., Tang, Y., Aboud, S., Jakobsson, E. & Saraniti, M., Sep 1 2007, In : Journal of Computational Electronics. 6, 1-3, p. 377-380 4 p.

Research output: Contribution to journalArticle

3 Scopus citations

Simulation of ultrasubmicrometer-gate In0.52Al0.48 As/In0.75Ga0.25As/In0.52 Al0.48As/InP pseudomorphic HEMTs using a full-band Monte Carlo simulator

Ayubi-Moak, J. S., Ferry, D. K., Goodnick, S., Akis, R. & Saraniti, M., Sep 1 2007, In : IEEE Transactions on Electron Devices. 54, 9, p. 2327-2338 12 p.

Research output: Contribution to journalArticle

25 Scopus citations
2006

Comparative analysis of SOI and GOI MOSFETs

Beysserie, S., Branlard, J., Aboud, S., Goodnick, S. & Saraniti, M., Dec 1 2006, In : IEEE Transactions on Electron Devices. 53, 10, p. 2545-2550 6 p.

Research output: Contribution to journalArticle

7 Scopus citations

Full-band particle-based simulation of 85 nm AlInSb/InSb quantum well transistors

Faralli, N., Markandeya, H., Branlard, J., Saraniti, M., Goodnick, S. & Ferry, D. K., Dec 1 2006, In : Journal of Computational Electronics. 5, 4, p. 483-486 4 p.

Research output: Contribution to journalArticle

1 Scopus citations

Global modeling of high frequency devices

Ayubi-Moak, J. S., Goodnick, S. & Saraniti, M., Dec 1 2006, In : Journal of Computational Electronics. 5, 4, p. 415-418 4 p.

Research output: Contribution to journalArticle

9 Scopus citations

Ion channel conductance measurements on a silicon-based platform

Wilk, S. J., Aboud, S., Petrossian, L., Goryll, M., Tang, J. M., Eisenberg, R. S., Saraniti, M., Goodnick, S. & Thornton, T., May 10 2006, In : Journal of Physics: Conference Series. 38, 1, p. 21-24 4 p.

Research output: Contribution to journalArticle

4 Scopus citations

The simulation of ionic charge transport in biological ion channels: An introduction to numerical methods

Saraniti, M., Aboud, S. & Eisenberg, R., 2006, In : Reviews in Computational Chemistry. 22, p. 229-293 65 p.

Research output: Contribution to journalArticle

23 Scopus citations
2005

Error analysis of the poisson P3M force field scheme for particle-based simulations of biological systems

Marreiro, D., Aboud, S., Saraniti, M. & Eisenberg, R., Apr 1 2005, In : Journal of Computational Electronics. 4, 1-2, p. 179-183 5 p.

Research output: Contribution to journalArticle

3 Scopus citations

Full-band particle-based analysis of device scaling for 3D tri-gate FETs

Chiney, P., Branlard, J., Aboud, S., Saraniti, M. & Goodnick, S., Apr 1 2005, In : Journal of Computational Electronics. 4, 1-2, p. 45-49 5 p.

Research output: Contribution to journalArticle

2 Scopus citations

Ion channels on silicon

Wilk, S. J., Petrossian, L., Goryll, M., Thornton, T., Goodnick, S., Tang, J. M., Eisenberg, R. S., Saraniti, M., Wong, D., Schmidt, J. J. & Montemagno, C. D., Jun 8 2005, In : e-Journal of Surface Science and Nanotechnology. 3

Research output: Contribution to journalArticle

3 Scopus citations

The role of long-range forces in porin channel conduction

Aboud, S., Marreiro, D., Saraniti, M. & Eisenberg, R., Apr 1 2005, In : Journal of Computational Electronics. 4, 1-2, p. 175-178 4 p.

Research output: Contribution to journalArticle

2004

A poisson P3M force field scheme for particle-based simulations of ionic liquids

Aboud, S., Marreiro, D., Saraniti, M. & Eisenberg, R., Apr 2004, In : Journal of Computational Electronics. 3, 2, p. 117-133 17 p.

Research output: Contribution to journalArticle

26 Scopus citations

Efficient memory management for cellular Monte Carlo algorithm

Branlard, J., Aboud, S. J., Goodnick, S. & Saraniti, M., Oct 1 2004, In : Journal of Computational Electronics. 3, 3-4, p. 323-327 5 p.

Research output: Contribution to journalArticle

Frequency analysis of semiconductor devices using full-band cellular Monte Carlo simulations

Branlard, J., Aboud, S., Osuch, P., Goodnick, S. & Saraniti, M., Dec 2004, In : Monte Carlo Methods and Applications. 10, 3-4, p. 227-233 7 p.

Research output: Contribution to journalArticle

3 Scopus citations

Full-band Monte Carlo simulations of photo excitation in silicon diode structures

Aboud, S., Saraniti, M., Goodnick, S., Brodschelm, A. & Leitenstorfer, A., Apr 1 2004, In : Semiconductor Science and Technology. 19, 4 SPEC. ISS., p. S301-S303

Research output: Contribution to journalArticle

3 Scopus citations

Full-band particle-based simulation of SOI and GOI MOSFETs

Beysserie, S., Aboud, S., Goodnick, S., Thornton, T. & Saraniti, M., Aug 1 2004, In : Physica Status Solidi (B) Basic Research. 241, 10, p. 2297-2302 6 p.

Research output: Contribution to journalArticle

2 Scopus citations

Influence of the electron-phonon interaction on electron transport in wurtzite GaN

Yamakawa, S., Aboud, S., Saraniti, M. & Goodnick, S., Apr 1 2004, In : Semiconductor Science and Technology. 19, 4 SPEC. ISS., p. S475-S477

Research output: Contribution to journalArticle

29 Scopus citations

Quantum corrected full-band cellular Monte Carlo simulation of AlGaN/GaN HEMTs

Yamakawa, S., Goodnick, S., Aboud, S. & Saraniti, M., Oct 1 2004, In : Journal of Computational Electronics. 3, 3-4, p. 299-303 5 p.

Research output: Contribution to journalArticle

16 Scopus citations