Marco Saraniti

Vice Dean of Faculty Administration

  • 806 Citations
  • 16 h-Index
1990 …2021
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Research Output 1990 2019

  • 806 Citations
  • 16 h-Index
  • 80 Article
  • 49 Conference contribution
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Article
2019

Assessment of self-heating effects under lateral scaling of GaN HEMTs

Latorre-Rey, A. D., Merrill, K., Albrecht, J. D. & Saraniti, M., Feb 1 2019, In : IEEE Transactions on Electron Devices. 66, 2, p. 908-916 9 p., 8601308.

Research output: Contribution to journalArticle

High electron mobility transistors
Heating
Electric fields
Phonons
Energy balance
2018
2 Citations (Scopus)

A π-Shaped Gate Design for Reducing Hot-Electron Generation in GaN HEMTs

Latorre-Rey, A. D., Albrecht, J. D. & Saraniti, M., Aug 24 2018, (Accepted/In press) In : IEEE Transactions on Electron Devices.

Research output: Contribution to journalArticle

Hot electrons
High electron mobility transistors
Hot carriers
Millimeter waves
Distribution functions
2017

Momentum Space Engineering of GaN HETs for RF Applications Through Full-Band Monte Carlo Simulations

Soligo, R., Sabatti, F., Chowdhury, S. & Saraniti, M., Oct 6 2017, (Accepted/In press) In : IEEE Transactions on Electron Devices.

Research output: Contribution to journalArticle

Aerospace engineering
Hot electrons
Momentum
Transistors
Satellites
1 Citation (Scopus)
Scattering
Semiconductor materials
Phonons
scattering
phonons
2016

Modeling of multi-band drift in nanowires using a full band Monte Carlo simulation

Hathwar, R., Saraniti, M. & Goodnick, S., Jul 28 2016, In : Journal of Applied Physics. 120, 4, 044307.

Research output: Contribution to journalArticle

nanowires
simulation
Runge-Kutta method
Brillouin zones
electric fields
2015
3 Citations (Scopus)

Energy Relaxation and Non-linear Transport in InAs Nanowires

Hathwar, R., Saraniti, M. & Goodnick, S., Oct 13 2015, In : Journal of Physics: Conference Series. 647, 1, 012029.

Research output: Contribution to journalArticle

nanowires
relaxation time
scattering
energy
electron energy
1 Citation (Scopus)

Full-band 3-D Monte Carlo simulation of InAs nanowires and high frequency analysis

Popescu, B., Popescu, D., Saraniti, M. & Lugli, P., Jun 1 2015, In : IEEE Transactions on Electron Devices. 62, 6, p. 1848-1854 7 p., 7102727.

Research output: Contribution to journalArticle

Nanowires
Signal analysis
Frequency response
Transistors
Cutoff frequency
2 Citations (Scopus)

The Role of the Base Stack on the AC Performance of GaN Hot Electron Transistor

Soligo, R., Chowdhury, S., Gupta, G., Mishra, U. & Saraniti, M., Jul 1 2015, In : IEEE Electron Device Letters. 36, 7, p. 669-671 3 p., 7112128.

Research output: Contribution to journalArticle

Hot electrons
Cutoff frequency
Transistors
Short circuit currents
Amplification
2014
4 Citations (Scopus)

Avalanche breakdown in SOI MESFETs

Lepkowski, W., Wilk, S. J., Parsi, A., Saraniti, M., Ferry, D. & Thornton, T., 2014, In : Solid-State Electronics. 91, p. 78-80 3 p.

Research output: Contribution to journalArticle

MISFET devices
MESFET devices
MIS (semiconductors)
Silicon
avalanches
2012
3 Citations (Scopus)

Modeling and simulation of terahertz devices

Goodnick, S. & Saraniti, M., 2012, In : IEEE Microwave Magazine. 13, 7, p. 36-44 9 p., 6355782.

Research output: Contribution to journalArticle

Terahertz spectroscopy
Submillimeter waves
submillimeter waves
solid state
simulation
2011
10 Citations (Scopus)

Carrier dynamics investigation on passivation dielectric constant and RF performance of millimeter-wave power GaN HEMTs

Guerra, D., Saraniti, M., Ferry, D. K., Goodnick, S. & Marino, F. A., Nov 2011, In : IEEE Transactions on Electron Devices. 58, 11, p. 3876-3884 9 p., 6024451.

Research output: Contribution to journalArticle

Wave power
Millimeter waves
Passivation
Permittivity
Theophylline

Extraction of gate capacitance of high-frequency and high-power GaN HEMTs by means of cellular Monte Carlo simulations

Guerra, D., Marino, F. ALESSIO., Goodnick, S., Ferry, D. & Saraniti, M., Sep 2011, In : International Journal of High Speed Electronics and Systems. 20, 3, p. 423-430 8 p.

Research output: Contribution to journalArticle

Capacitance
Simulators
Signal analysis
Monte Carlo simulation
Power HEMT
2010
30 Citations (Scopus)

Aspect ratio impact on RF and DC performance of state-of-the-art short-channel GaN and InGaAs HEMTs

Guerra, D., Akis, R., Marino, F. A., Ferry, D. K., Goodnick, S. & Saraniti, M., Nov 2010, In : IEEE Electron Device Letters. 31, 11, p. 1217-1219 3 p., 5585697.

Research output: Contribution to journalArticle

High electron mobility transistors
Aspect ratio
Band structure
Permittivity
Simulators
1 Citation (Scopus)

Brownian Dynamics study of the effects of dielectric constant on conductivity of porins

Smolyanitsky, A., Aboud, S. & Saraniti, M., Dec 2010, In : Journal of Computational and Theoretical Nanoscience. 7, 12, p. 2543-2546 4 p.

Research output: Contribution to journalArticle

Ionic conduction
Porins
Brownian Dynamics
Dielectric Constant
Poisson equation
12 Citations (Scopus)

Comparison of N- and Ga-face GaN HEMTs through cellular Monte Carlo simulations

Guerra, D., Saraniti, M., Faralli, N., Ferry, D. K., Goodnick, S. & Marino, F. A., Dec 2010, In : IEEE Transactions on Electron Devices. 57, 12, p. 3348-3354 7 p., 5595023.

Research output: Contribution to journalArticle

High electron mobility transistors
Simulators
Electron gas
Cutoff frequency
Band structure
63 Citations (Scopus)

Effects of threading dislocations on AlGaN/GaN high-electron mobility transistors

Marino, F. A., Faralli, N., Palacios, T., Ferry, D. K., Goodnick, S. & Saraniti, M., Jan 2010, In : IEEE Transactions on Electron Devices. 57, 1, p. 353-360 8 p., 5339189.

Research output: Contribution to journalArticle

High electron mobility transistors
Transistors
Simulators
Edge dislocations
Band structure
7 Citations (Scopus)

Emerging N-face GaN HEMT technology: A cellular Monte Carlo study

Marino, F. A., Saraniti, M., Faralli, N., Ferry, D. K., Goodnick, S. & Guerra, D., Oct 2010, In : IEEE Transactions on Electron Devices. 57, 10, p. 2579-2586 8 p., 5549880.

Research output: Contribution to journalArticle

High electron mobility transistors
Simulators
Millimeter waves
Band structure
Microwaves
28 Citations (Scopus)

Field effect modulation of ionic conductance of cylindrical silicon-on-insulator nanopore array

Joshi, P., Smolyanitsky, A., Petrossian, L., Goryll, M., Saraniti, M. & Thornton, T., 2010, In : Journal of Applied Physics. 107, 5, 054701.

Research output: Contribution to journalArticle

insulators
modulation
silicon
electrolytes

Optimizing performance to achieve multi-terahertz operating frequencies in pseudomorphic HEMTs

Akis, R., Faralli, N., Goodnick, S., Ferry, D. K. & Saraniti, M., Oct 2010, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 7, 10, p. 2502-2505 4 p.

Research output: Contribution to journalArticle

high electron mobility transistors
power gain
cut-off
spacing
oscillations

RF and DC characterization of state-of-the-art GaN HEMT devices through cellular Monte Carlo simulations

Marino, F. A., Guerra, D., Goodnick, S., Ferry, D. & Saraniti, M., Oct 2010, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 7, 10, p. 2445-2449 5 p.

Research output: Contribution to journalArticle

high electron mobility transistors
direct current
simulators
simulation
transport properties
15 Citations (Scopus)
high electron mobility transistors
holography
polarization
electrons
simulation
2009
5 Citations (Scopus)

Ballistic transport in InP-based HEMTs

Akis, R., Faralli, N., Ferry, D. K., Goodnick, S., Phatak, K. A. & Saraniti, M., Dec 2009, In : IEEE Transactions on Electron Devices. 56, 12, p. 2935-2944 10 p., 5299052.

Research output: Contribution to journalArticle

High electron mobility transistors
Ballistics
Scattering
Semiconductor devices
Band structure
8 Citations (Scopus)

Figures of merit in high-frequency and high-power GaN HEMTs

Marino, F. A., Faralli, N., Ferry, D. K., Goodnick, S. & Saraniti, M., 2009, In : Journal of Physics: Conference Series. 193, 012040.

Research output: Contribution to journalArticle

high electron mobility transistors
figure of merit
cut-off
electrical faults
Fourier analysis
17 Citations (Scopus)

Rigid ion model of high field transport inGaN

Yamakawa, S., Akis, R., Faralli, N., Saraniti, M. & Goodnick, S., 2009, In : Journal of Physics Condensed Matter. 21, 17, 174206.

Research output: Contribution to journalArticle

Phonons
Ions
phonons
velocity distribution
ions
4 Citations (Scopus)

Silicon nanopores as bioelectronic devices: A simulation study

Smolyanitsky, A. & Saraniti, M., 2009, In : Journal of Computational Electronics. 8, 2, p. 90-97 8 p.

Research output: Contribution to journalArticle

Nanopore
Nanopores
Silicon
Simulation Study
silicon
2008
3 Citations (Scopus)

Artificial cells: Designing biomimetic nanomachines

Saraniti, M., Nov 2008, In : Nature Nanotechnology. 3, 11, p. 647-648 2 p.

Research output: Contribution to journalArticle

biomimetics
Biomimetics
cells
6 Citations (Scopus)

Full-band cellular Monte Carlo simulations of terahertz high electron mobility transistors

Akis, R., Ayubi-Moak, J. S., Ferry, D. K., Goodnick, S., Faralli, N. & Saraniti, M., Sep 24 2008, In : Journal of Physics Condensed Matter. 20, 38, 384201.

Research output: Contribution to journalArticle

High electron mobility transistors
high electron mobility transistors
Cutoff frequency
Semiconductor quantum wells
simulation
4 Citations (Scopus)

Full-band CMC simulations of terahertz HEMTs

Ferry, K., Ayubi-Moak, J., Akis, R., Faralli, N., Saraniti, M. & Goodnick, S., Mar 1 2008, In : Journal of Physics: Conference Series. 109, 1, 012001.

Research output: Contribution to journalArticle

high electron mobility transistors
simulation
low noise
spacing
quantum wells

Full band Monte Carlo simulation of dislocation effects on 250 nm AlGaN-GaN HEMT

Vitobello, F., Faralli, N., Yamakawa, S., Goodnick, S. & Saraniti, M., 2008, In : Journal of Computational Electronics. 7, 3, p. 244-247 4 p.

Research output: Contribution to journalArticle

AlGaN
High electron mobility transistors
high electron mobility transistors
Dislocation
Monte Carlo Simulation
1 Citation (Scopus)

Hot electron effects in ultra-short gate length InAs/lnAlAs HEMTs

Ayubi-Moak, J. S., Akis, R., Saraniti, M., Ferry, D. K. & Goodnick, S., 2008, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 5, 1, p. 135-138 4 p.

Research output: Contribution to journalArticle

high electron mobility transistors
hot electrons
valleys
cut-off
frequency response
40 Citations (Scopus)

The upper limit of the cutoff frequency in ultrashort gate-length InGaAs/ InAlAs HEMTs: A new definition of effective gate length

Akis, R., Ayubi-Moak, J. S., Faralli, N., Ferry, D. K., Goodnick, S. & Saraniti, M., Apr 2008, In : IEEE Electron Device Letters. 29, 4, p. 306-308 3 p.

Research output: Contribution to journalArticle

Gates (transistor)
Cutoff frequency
High electron mobility transistors
Interpolation
Simulators
8 Citations (Scopus)

Towards the global modeling of InGaAs-based pseudomorphic HEMTs

Ayubi-Moak, J. S., Akis, R., Ferry, D. K., Goodnick, S., Faralli, N. & Saraniti, M., 2008, In : Journal of Computational Electronics. 7, 3, p. 187-191 5 p.

Research output: Contribution to journalArticle

InGaAs
High electron mobility transistors
high electron mobility transistors
simulators
Simulator
2007
12 Citations (Scopus)

Brownian dynamics simulation of charge transport in ion channels

Marreiro, D., Saraniti, M. & Aboud, S., May 30 2007, In : Journal of Physics Condensed Matter. 19, 21, 215203.

Research output: Contribution to journalArticle

Ion Channels
Charge transfer
Electrodynamics
Computer simulation
Ions
High electron mobility transistors
Semiconductor devices
Band structure
Heterojunctions
Monte Carlo methods
3 Citations (Scopus)

Improving the efficiency of BD algorithms for biological systems simulations

Marreiro, D., Tang, Y., Aboud, S., Jakobsson, E. & Saraniti, M., Sep 2007, In : Journal of Computational Electronics. 6, 1-3, p. 377-380 4 p.

Research output: Contribution to journalArticle

systems simulation
Biological systems
System Simulation
Biological Systems
Predictor-corrector
24 Citations (Scopus)

Simulation of ultrasubmicrometer-gate In0.52Al0.48 As/In0.75Ga0.25As/In0.52 Al0.48As/InP pseudomorphic HEMTs using a full-band Monte Carlo simulator

Ayubi-Moak, J. S., Ferry, D. K., Goodnick, S., Akis, R. & Saraniti, M., Sep 2007, In : IEEE Transactions on Electron Devices. 54, 9, p. 2327-2338 12 p.

Research output: Contribution to journalArticle

High electron mobility transistors
high electron mobility transistors
simulators
Physics
Simulators
2006
7 Citations (Scopus)

Comparative analysis of SOI and GOI MOSFETs

Beysserie, S., Branlard, J., Aboud, S., Goodnick, S. & Saraniti, M., 2006, In : IEEE Transactions on Electron Devices. 53, 10, p. 2545-2550 6 p.

Research output: Contribution to journalArticle

Germanium
Silicon
Impact ionization
Cutoff frequency
Transconductance
1 Citation (Scopus)

Full-band particle-based simulation of 85 nm AlInSb/InSb quantum well transistors

Faralli, N., Markandeya, H., Branlard, J., Saraniti, M., Goodnick, S. & Ferry, D. K., Dec 2006, In : Journal of Computational Electronics. 5, 4, p. 483-486 4 p.

Research output: Contribution to journalArticle

Quantum Well
Depletion
Semiconductor quantum wells
Slope
Transistors
9 Citations (Scopus)

Global modeling of high frequency devices

Ayubi-Moak, J. S., Goodnick, S. & Saraniti, M., Dec 2006, In : Journal of Computational Electronics. 5, 4, p. 415-418 4 p.

Research output: Contribution to journalArticle

Finite-difference Time-domain Method
Finite difference time domain method
Maxwell equations
Frequency Response
Maxwell's equations
4 Citations (Scopus)

Ion channel conductance measurements on a silicon-based platform

Wilk, S. J., Aboud, S., Petrossian, L., Goryll, M., Tang, J. M., Eisenberg, R. S., Saraniti, M., Goodnick, S. & Thornton, T., May 10 2006, In : Journal of Physics: Conference Series. 38, 1, p. 21-24 4 p.

Research output: Contribution to journalArticle

platforms
proteins
silicon
Poisson equation
charge distribution
1 Citation (Scopus)

Particle-based simulation: An algorithmic perspective

Saraniti, M., Aboud, S., Branlard, J. & Goodnick, S., Dec 2006, In : Journal of Computational Electronics. 5, 4, p. 405-410 6 p.

Research output: Contribution to journalArticle

Solid state devices
solid state devices
Dynamic Algorithms
Biological systems
Biological Systems
23 Citations (Scopus)

The simulation of ionic charge transport in biological ion channels: An introduction to numerical methods

Saraniti, M., Aboud, S. & Eisenberg, R., 2006, In : Reviews in Computational Chemistry. 22, p. 229-293 65 p.

Research output: Contribution to journalArticle

Ion Channels
Charge transfer
Numerical methods
2005
26 Citations (Scopus)

A poisson P3M force field scheme for particle-based simulations of ionic liquids

Aboud, S., Marreiro, D., Saraniti, M. & Eisenberg, R., Apr 2005, In : Journal of Computational Electronics. 3, 2, p. 117-133 17 p.

Research output: Contribution to journalArticle

Ionic Liquid
Ionic Liquids
Force Field
Ion Channels
Ionic liquids
3 Citations (Scopus)

Error analysis of the poisson P3M force field scheme for particle-based simulations of biological systems

Marreiro, D., Aboud, S., Saraniti, M. & Eisenberg, R., Apr 2005, In : Journal of Computational Electronics. 4, 1-2, p. 179-183 5 p.

Research output: Contribution to journalArticle

error analysis
Force Field
Biological systems
Biological Systems
Error Analysis
2 Citations (Scopus)

Full-band particle-based analysis of device scaling for 3D tri-gate FETs

Chiney, P., Branlard, J., Aboud, S., Saraniti, M. & Goodnick, S., Apr 2005, In : Journal of Computational Electronics. 4, 1-2, p. 45-49 5 p.

Research output: Contribution to journalArticle

Field effect transistors
field effect transistors
Scaling
scaling
Frequency Analysis
3 Citations (Scopus)

Ion channels on silicon

Wilk, S. J., Petrossian, L., Goryll, M., Thornton, T., Goodnick, S., Tang, J. M., Eisenberg, R. S., Saraniti, M., Wong, D., Schmidt, J. J. & Montemagno, C. D., Jun 8 2005, In : e-Journal of Surface Science and Nanotechnology. 3

Research output: Contribution to journalArticle

Silicon
Ion Channels
Ions
silicon
Microelectronic processing

The role of long-range forces in porin channel conduction

Aboud, S., Marreiro, D., Saraniti, M. & Eisenberg, R., Apr 2005, In : Journal of Computational Electronics. 4, 1-2, p. 175-178 4 p.

Research output: Contribution to journalArticle

Porins
Electrostatic force
Potential energy
Conduction
Anions
2004

Efficient memory management for cellular Monte Carlo algorithm

Branlard, J., Aboud, S. J., Goodnick, S. & Saraniti, M., Oct 2004, In : Journal of Computational Electronics. 3, 3-4, p. 323-327 5 p.

Research output: Contribution to journalArticle

Memory Management
Monte Carlo Algorithm
Data storage equipment
data compression
random access memory
3 Citations (Scopus)

Frequency analysis of semiconductor devices using full-band cellular Monte Carlo simulations

Branlard, J., Aboud, S., Osuch, P., Goodnick, S. & Saraniti, M., Dec 2004, In : Monte Carlo Methods and Applications. 10, 3-4, p. 227-233 7 p.

Research output: Contribution to journalArticle

Frequency Analysis
Semiconductor Devices
Gallium Arsenide
Semiconductor devices
Simulation Tool
3 Citations (Scopus)

Full-band Monte Carlo simulations of photo excitation in silicon diode structures

Aboud, S., Saraniti, M., Goodnick, S., Brodschelm, A. & Leitenstorfer, A., Apr 2004, In : Semiconductor Science and Technology. 19, 4 SPEC. ISS.

Research output: Contribution to journalArticle

Photoexcitation
Silicon
photoexcitation
Charge transfer
Momentum