Brian Skromme

Assistant Dean for Academic & Student Affairs and Professor

  • 2202 Citations
  • 29 h-Index
1900 …2022

Research output per year

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Research Output

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Article
1982

An analytical evaluation of GaAs grown with commercial and repurified trimethylgallium

Hess, K. L., Dapkus, P. D., Manasevit, H. M., Low, T. S., Skromme, B. J. & Stillman, G. E., Nov 1 1982, In : Journal of Electronic Materials. 11, 6, p. 1115-1137 23 p.

Research output: Contribution to journalArticle

33 Scopus citations
1983

High purity GaAs grown by the hydride vpe process

Abrokwah, J. K., Peck, T. N., Walterson, R. A., Stillman, G. E., Low, T. S. & Skromme, B., Jul 1 1983, In : Journal of Electronic Materials. 12, 4, p. 681-699 19 p.

Research output: Contribution to journalArticle

12 Scopus citations

Impact ionization of excitons and shallow donors in InP

Skromme, B. J. & Stillman, G. E., Jan 1 1983, In : Physical Review B. 28, 8, p. 4602-4607 6 p.

Research output: Contribution to journalArticle

34 Scopus citations

Residual donors and acceptors in high-purity GaAs and InP grown by hydride VPE

Skromme, B. J., Low, T. S., Roth, T. J., Stillman, G. E., Kennedy, J. K. & Abrokwah, J. K., Mar 1 1983, In : Journal of Electronic Materials. 12, 2, p. 433-457 25 p.

Research output: Contribution to journalArticle

47 Scopus citations
1984

Excited-state-donor to acceptor transitions in the photoluminescence spectrum of GaAs and InP

Skromme, B. J. & Stillman, G. E., Jan 1 1984, In : Physical Review B. 29, 4, p. 1982-1992 11 p.

Research output: Contribution to journalArticle

35 Scopus citations

Identification of the residual acceptors in undoped high purity InP

Skromme, B. J., Stillman, G. E., Oberstar, J. D. & Chan, S. S., Dec 1 1984, In : Applied Physics Letters. 44, 3, p. 319-321 3 p.

Research output: Contribution to journalArticle

29 Scopus citations

Photoluminescence characterization of molecular beam epitaxial GaAs grown using cracked AsH3

Skromme, B. J., Stillman, G. E., Calawa, A. R. & Metze, G. M., Dec 1 1984, In : Applied Physics Letters. 44, 2, p. 240-242 3 p.

Research output: Contribution to journalArticle

11 Scopus citations

Photoluminescence identification of the C and Be acceptor levels in InP

Skromme, B. J., Stillman, G. E., Oberstar, J. D. & Chan, S. S., May 1 1984, In : Journal of Electronic Materials. 13, 3, p. 463-491 29 p.

Research output: Contribution to journalArticle

57 Scopus citations
1985

Characterization of high-purity Si-doped molecular beam epitaxial GaAs

Skromme, B. J., Bose, S. S., Lee, B., Low, T. S., Lepkowski, T. R., DeJule, R. Y., Stillman, G. E. & Hwang, J. C. M., Dec 1 1985, In : Journal of Applied Physics. 58, 12, p. 4685-4702 18 p.

Research output: Contribution to journalArticle

74 Scopus citations

Neutron transmutation doping of high purity GaAs

Low, T. S., Kim, M. H., Lee, B., Skromme, B. J., Lepkowski, T. R. & Stillman, G. E., Sep 1 1985, In : Journal of Electronic Materials. 14, 5, p. 477-511 35 p.

Research output: Contribution to journalArticle

13 Scopus citations
1986

New shallow acceptor levels in GaAs

Skromme, B. J., Bose, S. S. & Stillman, G. E., Nov 1 1986, In : Journal of Electronic Materials. 15, 6, p. 345-348 4 p.

Research output: Contribution to journalArticle

7 Scopus citations
1987

DRAMATIC ENHANCEMENT IN THE GAIN OF ALGAAS/GAAS HETEROSTRUCTURE BIPOLAR TRANSISTORS BY SURFACE PASSIVATION.

Nottenburg, R. N., Sandroff, C. J., Skromme, B. J., Bischoff, J. C. & Bhat, R., Nov 1 1987, In : IEEE Transactions on Electron Devices. ED-34, 11

Research output: Contribution to journalArticle

1 Scopus citations

Effects of passivating ionic films on the photoluminescence properties of GaAs

Skromme, B. J., Sandroff, C. J., Yablonovitch, E. & Gmitter, T., Dec 1 1987, In : Applied Physics Letters. 51, 24, p. 2022-2024 3 p.

Research output: Contribution to journalArticle

178 Scopus citations

Growth of high-quality GaAs using trimethylgallium and diethylarsine

Bhat, R., Koza, M. A. & Skromme, B. J., Dec 1 1987, In : Applied Physics Letters. 50, 17, p. 1194-1196 3 p.

Research output: Contribution to journalArticle

75 Scopus citations

IVA-4 Dramatic Enhancement In The Gain of AlGaAs/GaAs Heterostructure Bipolar Transistors by Surface Passivation

Nottenburg, R. N., Sandroff, C. J., Skromme, B., Bischoff, J. C. & Bhat, R., 1987, In : IEEE Transactions on Electron Devices. 34, 11, p. 2370 1 p.

Research output: Contribution to journalArticle

1988

Extrinsic photoluminescence in coupled-well GaAs/AlGaAs superlattices

Skromme, B. J., Bhat, R. & Koza, M. A., May 1988, In : Solid State Communications. 66, 5, p. 543-547 5 p.

Research output: Contribution to journalArticle

12 Scopus citations

GaAs-on-InP heteroepitaxial waveguides grown by molecular beam epitaxy

Lo, Y. H., Deri, R. J., Harbison, J., Skromme, B. J., Seto, M., Hwang, D. M. & Lee, T. P., Dec 1 1988, In : Applied Physics Letters. 53, 14, p. 1242-1244 3 p.

Research output: Contribution to journalArticle

8 Scopus citations

Highly resolved excitonic spectra in GaAs/AlGaAs superlattices grown by organometallic chemical vapor deposition

Skromme, B. J., Bhat, R. & Koza, M. A., Dec 1 1988, In : Applied Physics Letters. 52, 12, p. 990-992 3 p.

Research output: Contribution to journalArticle

1 Scopus citations

InGaAs/InP superlattice mixing induced by Zn or Si diffusion

Schwarz, S. A., Mei, P., Venkatesan, T., Bhat, R., Hwang, D. M., Schwartz, C. L., Koza, M., Nazar, L. & Skromme, B. J., Dec 1 1988, In : Applied Physics Letters. 53, 12, p. 1051-1053 3 p.

Research output: Contribution to journalArticle

47 Scopus citations

Planar doping with gallium of molecular beam epitaxial ZnSe

De Miguel, J. L., Shibli, S. M., Tamargo, M. C. & Skromme, B. J., Dec 1 1988, In : Applied Physics Letters. 53, 21, p. 2065-2067 3 p.

Research output: Contribution to journalArticle

35 Scopus citations

Reduction of defects and inhomogeneous strain in heteroepitaxial ZnSe

Skromme, B. J., Tamargo, M. C., De Miguel, J. L. & Nahory, R. E., Dec 1 1988, In : Applied Physics Letters. 53, 22, p. 2217-2219 3 p.

Research output: Contribution to journalArticle

15 Scopus citations
1989

Atomic layer epitaxy of device quality GaAs

Colas, E., Bhat, R., Skromme, B. J. & Nihous, G. C., Dec 1 1989, In : Applied Physics Letters. 55, 26, p. 2769-2771 3 p.

Research output: Contribution to journalArticle

17 Scopus citations

Band bending, Fermi level pinning, and surface fixed charge on chemically prepared GaAs surfaces

Yablonovitch, E., Skromme, B. J., Bhat, R., Harbison, J. P. & Gmitter, T. J., Dec 1 1989, In : Applied Physics Letters. 54, 6, p. 555-557 3 p.

Research output: Contribution to journalArticle

78 Scopus citations

Electrical characterization of gallium planar-doped ZnSe grown by molecular-beam epitaxy

Shibli, S. M., Tamargo, M. C., De Miguel, J. L., Skromme, B. J., Nahory, R. E. & Farrell, H. H., Dec 1 1989, In : Journal of Applied Physics. 66, 9, p. 4295-4300 6 p.

Research output: Contribution to journalArticle

11 Scopus citations

Identification of Donors in GaAs by Resonantly Excited High-Field Magnetospectroscopy

Skromme, B. J., Bhat, R., Cox, H. M. & Colas, E., May 1989, In : IEEE Journal of Quantum Electronics. 25, 5, p. 1035-1045 11 p.

Research output: Contribution to journalArticle

10 Scopus citations

Multiple chamber molecular beam epitaxy growth system: Growth of GaAs/ZnSe heterostructures

Tamargo, M. C., De Miguel, J. L., Turco, F. S., Skromme, B., Meynadier, M. H., Nahory, R. E., Hwang, D. M. & Farrell, H. H., Mar 15 1989, In : Proceedings of SPIE - The International Society for Optical Engineering. 1037, p. 73-77 5 p.

Research output: Contribution to journalArticle

Photoluminescence characterization of ZnSe doped with Ga by bulk and planar doping techniques in molecular-beam epitaxy

Skromme, B. J., Shibli, S. M., De Miguel, J. L. & Tamargo, M. C., Dec 1 1989, In : Journal of Applied Physics. 65, 10, p. 3999-4005 7 p.

Research output: Contribution to journalArticle

38 Scopus citations

Spectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor-phase epitaxial gallium arsenide

Lee, B., Arai, K., Skromme, B. J., Bose, S. S., Roth, T. J., Aguilar, J. A., Lepkowski, T. R., Tien, N. C. & Stillman, G. E., Dec 1 1989, In : Journal of Applied Physics. 66, 8, p. 3772-3786 15 p.

Research output: Contribution to journalArticle

6 Scopus citations
1990

Vertical transport in semiconductor superlattices probed by miniband-to-acceptor magnetoluminescence

Skromme, B., Bhat, R., Koza, M. A., Schwarz, S. A., Ravi, T. S. & Hwang, D. M., Jan 1 1990, In : Physical Review Letters. 65, 16, p. 2050-2053 4 p.

Research output: Contribution to journalArticle

20 Scopus citations
1991

Arsenic-doped P-type ZnTe grown by molecular beam epitaxy

Turco-Sandroff, F. S., Brasil, M. J. S. P., Nahory, R. E., Martin, R. J., Zhang, Y-H. & Skromme, B., Dec 1 1991, In : Applied Physics Letters. 59, 6, p. 688-690 3 p.

Research output: Contribution to journalArticle

18 Scopus citations

Hall effect analysis of high purity p-type GaAs grown by metalorganic chemical vapor deposition

Kim, M. H., Bose, S. S., Skromme, B. J., Lee, B. & Stillman, G. E., Sep 1 1991, In : Journal of Electronic Materials. 20, 9, p. 671-679 9 p.

Research output: Contribution to journalArticle

12 Scopus citations

Surface stoichiometry effects on ZnSe/GaAs heteroepitaxy

Tamargo, M. C., Nahory, R. E., Skromme, B. J., Shibli, S. M., Weaver, A. L., Martin, R. J. & Farrell, H. H., May 2 1991, In : Journal of Crystal Growth. 111, 1-4, p. 741-746 6 p.

Research output: Contribution to journalArticle

29 Scopus citations
1992

Characteristics of GaAs, AlGaAs, and InGaAs materials grown by metalorganic chemical vapor deposition using an on-demand hydride gas generator

Hummel, S. G., Zou, Y., Beyler, C. A., Grodzinski, P., Dapkus, P. D., McManus, J. V., Zhang, Y-H., Skromme, B. & Lee, W. I., Dec 1 1992, In : Applied Physics Letters. 60, 12, p. 1483-1485 3 p.

Research output: Contribution to journalArticle

3 Scopus citations

Effects of thermal strain on the optical properties of heteroepitaxial ZnTe

Zhang, Y-H., Skromme, B. & Turco-Sandroff, F. S., Jan 1 1992, In : Physical Review B. 46, 7, p. 3872-3885 14 p.

Research output: Contribution to journalArticle

48 Scopus citations
1993
19 Scopus citations

Properties of the As-related shallow acceptor level in heteroepitaxial ZnSe grown by molecular-beam epitaxy

Zhang, Y-H., Skromme, B., Shibli, S. M. & Tamargo, M. C., Jan 1 1993, In : Physical Review B. 48, 15, p. 10885-10892 8 p.

Research output: Contribution to journalArticle

18 Scopus citations
1994

Effects of C incorporation on the luminescence properties of ZnSe grown by metalorganic chemical vapor deposition

Skromme, B., Liu, W., Jensen, K. F. & Giapis, K. P., Apr 2 1994, In : Journal of Crystal Growth. 138, 1-4, p. 338-345 8 p.

Research output: Contribution to journalArticle

15 Scopus citations

Systematic investigation of shallow acceptor levels in ZnSe

Zhang, Y-H., Liu, W., Skromme, B., Cheng, H., Shibli, S. M. & Tamargo, M. C., Apr 2 1994, In : Journal of Crystal Growth. 138, 1-4, p. 310-317 8 p.

Research output: Contribution to journalArticle

17 Scopus citations
1995

Deep-center photoluminescence in nitrogen-doped ZnSe

Hauksson, I. S., Wang, S. Y., Simpson, J., Prior, K. A., Cavenett, B. C., Liu, W. & Skromme, B., Jan 1 1995, In : Physical Review B. 52, 24, p. 17184-17190 7 p.

Research output: Contribution to journalArticle

22 Scopus citations

Growth and characterization of pseudomorphic single crystal zinc blende Mn

Skromme, B., Zhang, Y-H., Smith, D. & Sivananthan, S., Jan 1 1995, In : Applied Physics Letters. 67, 1 p.

Research output: Contribution to journalArticle

55 Scopus citations

Luminescence as a diagnostic of wide-gap II-VI compound semiconductor materials

Skromme, B., Jan 1 1995, In : Annual Review of Materials Science. 25, 1, p. 601-646 46 p.

Research output: Contribution to journalArticle

9 Scopus citations

Properties of the shallow O-related acceptor level in ZnSe

Chen, J., Zhang, Y-H., Skromme, B., Akimoto, K. & Pachuta, S. J., Dec 1 1995, In : Journal of Applied Physics. 78, 8, p. 5109-5119 11 p.

Research output: Contribution to journalArticle

20 Scopus citations
1996

Heteroepitaxial CdTe(111) grown by MBE on nominally flat and misoriented Si(001) substrates: Characterization by electron microscopy and optical methods

Tsen, S. C. Y., Smith, D., Hutchins, J. W., Skromme, B., Chen, Y. P. & Sivananthan, S., Feb 1996, In : Journal of Crystal Growth. 159, 1-4, p. 58-63 6 p.

Research output: Contribution to journalArticle

10 Scopus citations

Ion beam mixing in ZnSe/CdZnSe strained layer structures

Morton, R., Deng, F., Lau, S. S., Xin, S., Furdyna, J. K., Hutchins, J. W., Skromme, B. & Mayer, J. W., Sep 1996, In : Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 118, 1-4, p. 704-708 5 p.

Research output: Contribution to journalArticle

MnS/ZnSe on GaAs grown by molecular beam epitaxy

Sivananthan, S., Wang, L., Sporken, R., Chen, J., Skromme, B. & Smith, D., Feb 1996, In : Journal of Crystal Growth. 159, 1-4, p. 94-98 5 p.

Research output: Contribution to journalArticle

13 Scopus citations

Optical characterization of ZnMnSSe quaternary alloys for visible light emitting devices

Hutchins, J. W., Parameshwaran, B., Skromme, B., Smith, D. & Sivananthan, S., Feb 1996, In : Journal of Crystal Growth. 159, 1-4, p. 50-53 4 p.

Research output: Contribution to journalArticle

3 Scopus citations
1997

Optical and magneto-optical characterization of heteroepitaxial gallium nitride

Skromme, B., Dec 18 1997, In : Materials Science and Engineering B. 50, 1-3, p. 117-125 9 p.

Research output: Contribution to journalArticle

36 Scopus citations

Optical investigation of strain and defects in (100) CdTe/Ge/Si and ZnTe/Ge/Si grown by molecular beam epitaxy

Hutchins, J. W., Skromme, B., Chen, Y. P., Sivananthan, S. & Posthill, J. B., Jul 21 1997, In : Applied Physics Letters. 71, 3, p. 350-352 3 p.

Research output: Contribution to journalArticle

4 Scopus citations

Strain determination in heteroepitaxial GaN

Skromme, B., Zhao, H., Wang, D., Kong, H. S., Leonard, M. T., Bulman, G. E. & Molnar, R. J., Aug 11 1997, In : Applied Physics Letters. 71, 6, p. 829-831 3 p.

Research output: Contribution to journalArticle

54 Scopus citations
1998

Optical spectroscopy of Si-related donor and acceptor levels in Si-doped GaN grown by hydride vapor phase epitaxy

Jayapalan, J., Skromme, B., Vaudo, R. P. & Phanse, V. M., Dec 1 1998, In : Applied Physics Letters. 73, 9, p. 1188-1190 3 p.

Research output: Contribution to journalArticle

72 Scopus citations