Brian Skromme

Assistant Dean for Academic & Student Affairs and Professor

  • 2174 Citations
  • 29 h-Index
1900 …2022
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Research Output 1900 2016

2016
2 Citations (Scopus)

Impact of step-based tutoring on student learning in linear circuit courses

Skromme, B., Seetharam, V., Gao, X., Korrapati, B., McNamara, B. E., Huang, Y. F. & Robinson, D. H., Nov 28 2016, FIE 2016 - Frontiers in Education 2016: The Crossroads of Engineering and Business. Institute of Electrical and Electronics Engineers Inc., Vol. 2016-November. 7757638

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Students
Networks (circuits)
learning
student
Textbooks
1 Citation (Scopus)

Interactive tutorial system for linear circuit analysis: Impact on learning and novel tutorials

Skromme, B., Gao, X., Korrapati, B., Seetharam, V., Huang, Y. F. & Robinson, D. H., Jun 26 2016, 2016 ASEE Annual Conference and Exposition. American Society for Engineering Education, Vol. 2016-June.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electric network analysis
Students
Networks (circuits)
Laplace transforms
Inverse transforms
2015
4 Citations (Scopus)

Addressing barriers to learning in linear circuit analysis

Skromme, B. & Robinson, D., 2015, 122nd ASEE Annual Conference and Exposition: Making Value for Society. American Society for Engineering Education

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electric network analysis
Networks (circuits)
Electric potential
Students
Electric network topology
3 Citations (Scopus)

Step-based tutoring system for introductory linear circuit analysis

Skromme, B., Rayes, P. J., McNamara, B. E., Seetharam, V., Gao, X., Thompson, T., Wang, X., Cheng, B., Huang, Y. F. & Robinson, D. H., Dec 2 2015, Proceedings - Frontiers in Education Conference, FIE. Institute of Electrical and Electronics Engineers Inc., Vol. 2015-December. 7344312

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electric network analysis
Students
student
Networks (circuits)
Textbooks
2014
4 Citations (Scopus)

Expansion and evaluation of a step-based tutorial program for linear circuit analysis

Skromme, B., Rayes, P., Cheng, B., McNamara, B., Gibson, A. S., Barrus, A., Quick, J. M., Atkinson, R., Huang, Y. F. & Robinson, D. H., 2014, ASEE Annual Conference and Exposition, Conference Proceedings. American Society for Engineering Education

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electric network analysis
Students
Electric network topology
Networks (circuits)
Textbooks
2013
7 Citations (Scopus)

Computer-aided instruction for introductory linear circuit analysis

Skromme, B., Rayes, P. J., Whitlatch, C. D., Wang, Q., Barrus, A., Quick, J. M., Atkinson, R. & Frank, T. S., 2013, Proceedings - Frontiers in Education Conference, FIE. p. 314-319 6 p. 6684839

Research output: Chapter in Book/Report/Conference proceedingConference contribution

computer-aided instruction
Computer aided instruction
Electric network analysis
Students
Textbooks
10 Citations (Scopus)

Teaching linear circuit analysis techniques with computers

Skromme, B., Wang, Q., Rayes, P., Quick, J. M., Atkinson, R. & Frank, T., 2013, ASEE Annual Conference and Exposition, Conference Proceedings.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electric network analysis
Teaching
Students
Networks (circuits)
Electric network topology
2012
9 Citations (Scopus)

Automated problem and solution generation software for computer-aided instruction in elementary linear circuit analysis

Whitlatch, C. D., Wang, Q. & Skromme, B., 2012, 119th ASEE Annual Conference and Exposition. American Society for Engineering Education

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Computer aided instruction
Electric network analysis
Engines
Networks (circuits)
Textbooks
1 Citation (Scopus)

Photoluminescence studies of type-II CdSe/CdTe superlattices

Li, J. J., Yin, L., Johnson, S., Skromme, B., Wang, S., Liu, X., Ding, D., Ning, C-Z., Furdyna, J. K. & Zhang, Y-H., Aug 6 2012, In : Applied Physics Letters. 101, 6, 061915.

Research output: Contribution to journalArticle

superlattices
photoluminescence
carrier lifetime
Poisson equation
blue shift
2010

Reduction of low-temperature nonlinearities in pseudomorphic AlGaAs/ingaas hemts due to si-related DX centers

Skromme, B., Sasikumar, A., Green, B. M., Hartin, O. L., Weitzel, C. E. & Miller, M. G., Apr 2010, In : IEEE Transactions on Electron Devices. 57, 4, p. 749-754 6 p., 5427054.

Research output: Contribution to journalArticle

Doping (additives)
Deep level transient spectroscopy
Poisson equation
High electron mobility transistors
Code division multiple access
2007
1 Citation (Scopus)

Achieving low sheet resistance from implanted P-type layers in 4H-SiC using high temperature graphite capped annealing

Wang, Y., Losee, P. A., Balachandran, S., Bhat, I. B., Chow, T. P., Wang, Y., Skromme, B., Kim, J. K. & Schubert, E. F., 2007, In : Materials Science Forum. 556-557, p. 567-570 4 p.

Research output: Contribution to journalArticle

Graphite
Sheet resistance
graphite
Annealing
annealing
2006
2 Citations (Scopus)

Characterization of stacking fault-induced behavior in 4H-SiC p-i-n diodes

Wang, Y., Chen, L., Mikhov, M. K., Samson, G. & Skromme, B., 2006, Materials Science Forum. PART 1 ed. Vol. 527-529. p. 363-366 4 p. (Materials Science Forum; vol. 527-529, no. PART 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Stacking faults
Diodes
Electroluminescence
Imaging techniques
Poisson equation
Spreadsheets
Semiconductor devices
Teaching
Students
Feedback
16 Citations (Scopus)

Effects of different defect types on the performance of devices fabricated on a 4H-SiC homoepitaxial layer

Chen, H., Raghothamachar, B., Vetter, W., Dudley, M., Wang, Y. & Skromme, B., 2006, Materials Research Society Symposium Proceedings. Vol. 911. p. 169-174 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Edge dislocations
Screw dislocations
Defects
Burgers vector
Electric breakdown
2 Citations (Scopus)

Formation and properties of schottky diodes on 4H-SiC after high temperature annealing with graphite encapsulation

Wang, Y., Mikhov, M. K. & Skromme, B., 2006, Materials Science Forum. PART 2 ed. Vol. 527-529. p. 915-918 4 p. (Materials Science Forum; vol. 527-529, no. PART 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Graphite
Encapsulation
Diodes
Annealing
Atomic force microscopy
2005
45 Citations (Scopus)

Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H-SiC Schottky diodes

Wang, Y., Ali, G. N., Mikhov, M. K., Vaidyanathan, V., Skromme, B., Raghothamachar, B. & Dudley, M., Jan 1 2005, In : Journal of Applied Physics. 97, 1, 013540.

Research output: Contribution to journalArticle

Schottky diodes
electrical properties
electron beams
defects
electrical faults
35 Citations (Scopus)

Design and optimization of junction termination extension (JTE) for 4H-SiC high voltage Schottky diodes

Mahajan, A. & Skromme, B., Jun 2005, In : Solid-State Electronics. 49, 6, p. 945-955 11 p.

Research output: Contribution to journalArticle

Schottky diodes
high voltages
Diodes
optimization
Electric potential
17 Citations (Scopus)

Effect of inclined quantum wells on macroscopic capacitance-voltage response of Schottky contacts: Cubic inclusions in hexagonal SiC

Park, K. B., Ding, Y., Pelz, J. P., Mikhov, M. K., Wang, Y. & Skromme, B., 2005, In : Applied Physics Letters. 86, 22, p. 1-3 3 p., 222109.

Research output: Contribution to journalArticle

electric contacts
capacitance
quantum wells
inclusions
electric potential

Imaging of the electric fields and charge associated with modulation-doped 4H/3C/4H polytypic quantum wells in SiC

Mikhov, M. K., Samson, G., Skromme, B., Wang, R., Li, C. & Bhat, I., Jun 30 2005, AIP Conference Proceedings. Vol. 772. p. 937-938 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

electric charge
quantum wells
wafers
electrostatics
microscopy
15 Citations (Scopus)

Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN

Bai, J., Huang, X., Dudley, M., Wagner, B., Davis, R. F., Wu, L., Sutter, E., Zhu, Y. & Skromme, B., Sep 15 2005, In : Journal of Applied Physics. 98, 6, 063510.

Research output: Contribution to journalArticle

crystal defects
risers
rods
intersections
buffers

Optical Reflectance of bulk AlN Crystals and AlN epitaxial films

Chen, L., Skromme, B., Chen, C., Sun, W., Yang, J., Khan, M. A., Nakarmi, M. L., Lin, J. Y., Jiang, H. X., Reitmeyer, Z. J., Davis, R. F., Dalmau, R. F., Schlesser, R. & Sitar, Z., Jun 30 2005, AIP Conference Proceedings. Vol. 772. p. 297-298 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

excitons
reflectance
crystals
oscillator strengths
thick films
2 Citations (Scopus)

Optical spectroscopy of polytypic quantum wells in SiC

Samson, G., Chen, L., Skromme, B., Wang, R., Li, C. & Bhat, I., Jun 30 2005, AIP Conference Proceedings. Vol. 772. p. 989-990 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

quantum wells
modulation doping
spectroscopy
depletion
Raman spectra
2 Citations (Scopus)

Relationship of basal plane and prismatic stacking faults in GaN to low temperature photoluminescence peaks at ∼3.4 eV and ∼3.2 eV

Bai, J., Dudley, M., Chen, L., Skromme, B., Hartlieb, P. J., Michaels, E., Kolis, J. W., Wagner, B., Davis, R. F., Chowdhury, U. & Dupuis, R. D., 2005, Materials Research Society Symposium Proceedings. Wetzel, C., Gil, B., Kuzuhara, M. & Manfra, M. (eds.). Vol. 831. p. 721-726 6 p. E11.37

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Stacking faults
Photoluminescence
Stairs
Aluminum Oxide
Sapphire
3 Citations (Scopus)

Spreadsheets to promote interactive engagement in semiconductor device courses

Venkatasubramanian, R. & Skromme, B., 2005, ASEE Annual Conference and Exposition, Conference Proceedings. p. 6085-6094 10 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Spreadsheets
Semiconductor devices
Students
Electrostatics
MOS capacitors
15 Citations (Scopus)

Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates

Bai, J., Dudley, M., Chen, L., Skromme, B., Wagner, B., Davis, R. F., Chowdhury, U. & Dupuis, R. D., 2005, In : Journal of Applied Physics. 97, 11, 116101.

Research output: Contribution to journalArticle

crystal defects
intersections
luminescence
sapphire
defects
2004
63 Citations (Scopus)

Band edge exciton states in AlN single crystals and epitaxial layers

Chen, L., Skromme, B., Dalmau, R. F., Schlesser, R., Sitar, Z., Chen, C., Sun, W., Yang, J., Khan, M. A., Nakarmi, M. L., Lin, J. Y. & Jiang, H. X., Nov 8 2004, In : Applied Physics Letters. 85, 19, p. 4334-4336 3 p.

Research output: Contribution to journalArticle

excitons
single crystals
oscillator strengths
crystal field theory
reflectance
12 Citations (Scopus)

Characterization of double stacking faults induced by thermal processing of heavily n-doped 4H-SiC substrates

Skromme, B., Mikhov, M. K., Chen, L., Samson, G., Wang, R., Li, C. & Bhat, I., 2004, In : Materials Science Forum. 457-460, I, p. 581-584 4 p.

Research output: Contribution to journalArticle

Electrostatic force
Stacking faults
crystal defects
Raman scattering
Photoluminescence
3 Citations (Scopus)

Cobic inclusions in 4H-SiC studied with ballistic electron-emission microscopy

Ding, Y., Park, K. B., Pelz, J. P., Palle, K. C., Mikhov, M. K., Skromme, B., Meidia, H. & Mahajan, S., Jul 2004, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 22, 4, p. 1351-1355 5 p.

Research output: Contribution to journalArticle

Electron emission
Ballistics
ballistics
electron emission
Microscopic examination
10 Citations (Scopus)

Correlated structural and optical characterization of ammonothermally grown bulk GaN

Bai, J., Dudley, M., Raghothamachar, B., Gouma, P., Skromme, B., Chen, L., Hartlieb, P. J., Michaels, E. & Kolis, J. W., Apr 26 2004, In : Applied Physics Letters. 84, 17, p. 3289-3291 3 p.

Research output: Contribution to journalArticle

photoluminescence
crystal defects
transmission electron microscopy
crystals
topography
16 Citations (Scopus)

Properties of the 3.4 eV luminescence band in GaN and its relation to stacking faults

Skromme, B., Chen, L., Mikhov, M. K., Yamane, H., Aoki, M. & Disalvo, F. J., 2004, In : Materials Science Forum. 457-460, II, p. 1613-1616 4 p.

Research output: Contribution to journalArticle

Stacking faults
Full width at half maximum
crystal defects
Semiconductor quantum wells
Luminescence
32 Citations (Scopus)

Quantum well state of self-forming 3C-SiC inclusions in 4H SiC determined by ballistic electron emission microscopy

Ding, Y., Park, K. B., Pelz, J. P., Palle, K. C., Mikhov, M. K., Skromme, B., Meidia, H. & Mahajan, S., Jan 2004, In : Physical Review B - Condensed Matter and Materials Physics. 69, 4, p. 413051-413054 4 p., 041305.

Research output: Contribution to journalArticle

Electron emission
Ballistics
ballistics
electron emission
Semiconductor quantum wells
2003

Electrostatic force microscopy and secondary electron imaging of double stacking faults in heavily n-type 4H-SiC after oxidation

Mikhov, M. K., Skromme, B., Wang, R., Li, C. & Bhat, I., 2003, Materials Research Society Symposium - Proceedings. Friedman, D. J., Manasreh, O., Buyanova, I. A., Munkholm, A. & Auret, F. D. (eds.). Vol. 799. p. 139-144 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electrostatic force
Stacking faults
Semiconductor quantum wells
Microscopic examination
Imaging techniques

Structural defect-related photoluminescence in GaN

Chen, L., Skromme, B., Mikhov, M. K., Yamane, H., Aoki, M., DiSalvo, F. J., Wagner, B., Davis, R. F., Grudowski, P. A. & Dupuis, R. D., 2003, Materials Research Society Symposium - Proceedings. Ng, H. M., Wraback, M., Hiramatsu, K. & Grandjean, N. (eds.). Vol. 798. p. 637-642 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Photoluminescence
Defects
Aluminum Oxide
Stacking faults
Metallorganic chemical vapor deposition
2002
2 Citations (Scopus)

Effects of structural defects on diode properties in 4H-SiC

Skromme, B., Palle, K. C., Mikhov, M. K., Meidia, H., Mahajan, S., Huang, X. R., Vetter, W. M., Dudley, M., Moore, K., Smith, S. & Gehoski, T., 2002, Materials Research Society Symposium - Proceedings. Saddow, S. E., Larkin, D. J., Saks, N. S. & Schoner, A. (eds.). Vol. 742. p. 181-186 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Diodes
Defects
Imaging techniques
Screw dislocations
Electrons
1 Citation (Scopus)

Evolution of subgrain boundaries in heteroepitaxial GaN/AlN/6H-SiC grown by metalorganic chemical vapor deposition

Liu, H. X., Ali, G. N., Palle, K. C., Mikhov, M. K., Skromme, B., Reitmeyer, Z. J. & Davis, R. F., 2002, Materials Research Society Symposium - Proceedings. Wetzel, C., Yu, E. T., Speck, J. S., Rizzi, A. & Arakawa, Y. (eds.). Vol. 743. p. 381-386 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Metallorganic chemical vapor deposition
Cathodoluminescence
Substrates
Photoluminescence
Lattice mismatch
24 Citations (Scopus)

Optical characterization of bulk GaN grown by a Na-Ga melt technique

Skromme, B., Palle, K., Poweleit, C. D., Yamane, H., Aoki, M. & DiSalvo, F. J., Dec 16 2002, In : Journal of Crystal Growth. 246, 3-4, p. 299-306 8 p.

Research output: Contribution to journalArticle

Platelets
platelets
Photoluminescence
Full width at half maximum
photoluminescence

Optical characterization of bulk GaN grown from a Na/Ga flux

Palle, K., Chen, L., Liu, H. X., Skromme, B., Yamane, H., Aoki, M., Hoffman, C. B. & DiSalvo, F. J., 2002, Materials Research Society Symposium - Proceedings. Wetzel, C., Yu, E. T., Speck, J. S., Rizzi, A. & Arakawa, Y. (eds.). Vol. 743. p. 201-206 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Photoluminescence
Cathodoluminescence
Fluxes
Platelets
Crystals
31 Citations (Scopus)

Optical spectroscopy of bulk GaN crystals grown from a Na-Ga melt

Skromme, B., Palle, K. C., Poweleit, C. D., Yamane, H., Aoki, M. & DiSalvo, F. J., Nov 11 2002, In : Applied Physics Letters. 81, 20, p. 3765-3767 3 p.

Research output: Contribution to journalArticle

zinc
gallium nitrides
spectroscopy
crystals
purity
56 Citations (Scopus)

Oxidation-induced crystallographic transformation in heavily N-doped 4H-SiC wafers

Skromme, B., Palle, K., Poweleit, C. D., Bryant, L. R., Vetter, W. M., Dudley, M., Moore, K. & Gehoski, T., 2002, In : Materials Science Forum. 389-393, 1, p. 455-458 4 p.

Research output: Contribution to journalArticle

Topography
Photoluminescence
Metals
wafers
boules
1 Citation (Scopus)

Spectroscopic characterization of ion-implanted GaN

Chen, L. & Skromme, B., 2002, Materials Research Society Symposium - Proceedings. Wetzel, C., Yu, E. T., Speck, J. S., Rizzi, A. & Arakawa, Y. (eds.). Vol. 743. p. 755-760 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Excitons
Photoluminescence
Ions
Ion implantation
Chemical activation
2001

Characterization of ion implanted GaN

Skromme, B., Martinez, G. L., Krasnobaev, L. & Poker, D. B., 2001, In : Materials Research Society Symposium - Proceedings. 639, p. G11.39.1-G11.39.6

Research output: Contribution to journalArticle

Excitons
Vacancies
Photoluminescence
Ions
implantation
4 Citations (Scopus)

Characterization of ion implanted GaN

Skromme, B., Martinez, G. L., Krasnobaev, L. & Poker, D. B., 2001, Materials Research Society Symposium - Proceedings. Wetzel, C., Shur, M., Mishra, U., Gil, B. & Kishino, K. (eds.). Vol. 639.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Excitons
Vacancies
Photoluminescence
Ions
Temperature
2000
89 Citations (Scopus)

Electrical characteristics of Schottky barriers on 4H-SiC: The effects of barrier height nonuniformity

Skromme, B., Luckowski, E., Moore, K., Bhatnagar, M., Weitzel, C. E., Gehoski, T. & Ganser, D., Mar 2000, In : Journal of Electronic Materials. 29, 3, p. 376-383 8 p.

Research output: Contribution to journalArticle

nonuniformity
Electric potential
Induced currents
electric potential
wafers
4 Citations (Scopus)

Fermi level pinning and Schottky barrier characteristics on reactively ion etched 4H-SiC

Skromme, B., Luckowski, E., Moore, K., Clemens, S., Resnick, D., Gehoski, T. & Ganser, D., 2000, Materials Science Forum. Trans Tech Publ Ltd, Vol. 338.

Research output: Chapter in Book/Report/Conference proceedingChapter

Fermi level
Ions
Annealing
Capacitance measurement
Epilayers
1 Citation (Scopus)

Optical activation behavior of ion implanted acceptor species in GaN

Skromme, B. & Martinez, G. L., 2000, Materials Research Society Symposium - Proceedings. Vol. 595.

Research output: Chapter in Book/Report/Conference proceedingChapter

Chemical activation
Ions
Hydrides
Excitons
Ion implantation

Optical activation behavior of ion implanted acceptor species in GaN

Skromme, B. & Martinez, G. L., 2000, In : MRS Internet Journal of Nitride Semiconductor Research. 5, SUPPL. 1

Research output: Contribution to journalArticle

Chemical activation
Ions
Hydrides
Excitons
Ion implantation
2 Citations (Scopus)

Optical activation behavior of ion implanted acceptor species in GaN

Skromme, B. & Martinez, G. L., 2000, Materials Research Society Symposium - Proceedings. Materials Research Society, Vol. 595.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chemical activation
Ions
Hydrides
Excitons
Ion implantation
57 Citations (Scopus)

Surface recombination and sulfide passivation of GaN

Martinez, G. L., Curiel, M. R., Skromme, B. & Molnar, R. J., Mar 2000, In : Journal of Electronic Materials. 29, 3, p. 325-331 7 p.

Research output: Contribution to journalArticle

Sulfides
Passivation
passivity
sulfides
Photoluminescence
1999
65 Citations (Scopus)

Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy

Skromme, B., Jayapalan, J., Vaudo, R. P. & Phanse, V. M., Apr 19 1999, In : Applied Physics Letters. 74, 16, p. 2358-2360 3 p.

Research output: Contribution to journalArticle

vapor phase epitaxy
hydrides
excitons
luminescence
data structures
2 Citations (Scopus)
Gallium nitride
Photoluminescence
Excitons
Vapor phase epitaxy
Hydrides