Brian Skromme

Assistant Dean for Academic & Student Affairs and Professor

  • 2174 Citations
  • 29 h-Index
1900 …2022
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Research Output 1900 2016

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Article
2012
1 Citation (Scopus)

Photoluminescence studies of type-II CdSe/CdTe superlattices

Li, J. J., Yin, L., Johnson, S., Skromme, B., Wang, S., Liu, X., Ding, D., Ning, C-Z., Furdyna, J. K. & Zhang, Y-H., Aug 6 2012, In : Applied Physics Letters. 101, 6, 061915.

Research output: Contribution to journalArticle

superlattices
photoluminescence
carrier lifetime
Poisson equation
blue shift
2010

Reduction of low-temperature nonlinearities in pseudomorphic AlGaAs/ingaas hemts due to si-related DX centers

Skromme, B., Sasikumar, A., Green, B. M., Hartin, O. L., Weitzel, C. E. & Miller, M. G., Apr 2010, In : IEEE Transactions on Electron Devices. 57, 4, p. 749-754 6 p., 5427054.

Research output: Contribution to journalArticle

Doping (additives)
Deep level transient spectroscopy
Poisson equation
High electron mobility transistors
Code division multiple access
2007
1 Citation (Scopus)

Achieving low sheet resistance from implanted P-type layers in 4H-SiC using high temperature graphite capped annealing

Wang, Y., Losee, P. A., Balachandran, S., Bhat, I. B., Chow, T. P., Wang, Y., Skromme, B., Kim, J. K. & Schubert, E. F., 2007, In : Materials Science Forum. 556-557, p. 567-570 4 p.

Research output: Contribution to journalArticle

Graphite
Sheet resistance
graphite
Annealing
annealing
2006
Spreadsheets
Semiconductor devices
Teaching
Students
Feedback
2005
45 Citations (Scopus)

Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H-SiC Schottky diodes

Wang, Y., Ali, G. N., Mikhov, M. K., Vaidyanathan, V., Skromme, B., Raghothamachar, B. & Dudley, M., Jan 1 2005, In : Journal of Applied Physics. 97, 1, 013540.

Research output: Contribution to journalArticle

Schottky diodes
electrical properties
electron beams
defects
electrical faults
35 Citations (Scopus)

Design and optimization of junction termination extension (JTE) for 4H-SiC high voltage Schottky diodes

Mahajan, A. & Skromme, B., Jun 2005, In : Solid-State Electronics. 49, 6, p. 945-955 11 p.

Research output: Contribution to journalArticle

Schottky diodes
high voltages
Diodes
optimization
Electric potential
17 Citations (Scopus)

Effect of inclined quantum wells on macroscopic capacitance-voltage response of Schottky contacts: Cubic inclusions in hexagonal SiC

Park, K. B., Ding, Y., Pelz, J. P., Mikhov, M. K., Wang, Y. & Skromme, B., 2005, In : Applied Physics Letters. 86, 22, p. 1-3 3 p., 222109.

Research output: Contribution to journalArticle

electric contacts
capacitance
quantum wells
inclusions
electric potential
15 Citations (Scopus)

Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN

Bai, J., Huang, X., Dudley, M., Wagner, B., Davis, R. F., Wu, L., Sutter, E., Zhu, Y. & Skromme, B., Sep 15 2005, In : Journal of Applied Physics. 98, 6, 063510.

Research output: Contribution to journalArticle

crystal defects
risers
rods
intersections
buffers
15 Citations (Scopus)

Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates

Bai, J., Dudley, M., Chen, L., Skromme, B., Wagner, B., Davis, R. F., Chowdhury, U. & Dupuis, R. D., 2005, In : Journal of Applied Physics. 97, 11, 116101.

Research output: Contribution to journalArticle

crystal defects
intersections
luminescence
sapphire
defects
2004
63 Citations (Scopus)

Band edge exciton states in AlN single crystals and epitaxial layers

Chen, L., Skromme, B., Dalmau, R. F., Schlesser, R., Sitar, Z., Chen, C., Sun, W., Yang, J., Khan, M. A., Nakarmi, M. L., Lin, J. Y. & Jiang, H. X., Nov 8 2004, In : Applied Physics Letters. 85, 19, p. 4334-4336 3 p.

Research output: Contribution to journalArticle

excitons
single crystals
oscillator strengths
crystal field theory
reflectance
12 Citations (Scopus)

Characterization of double stacking faults induced by thermal processing of heavily n-doped 4H-SiC substrates

Skromme, B., Mikhov, M. K., Chen, L., Samson, G., Wang, R., Li, C. & Bhat, I., 2004, In : Materials Science Forum. 457-460, I, p. 581-584 4 p.

Research output: Contribution to journalArticle

Electrostatic force
Stacking faults
crystal defects
Raman scattering
Photoluminescence
3 Citations (Scopus)

Cobic inclusions in 4H-SiC studied with ballistic electron-emission microscopy

Ding, Y., Park, K. B., Pelz, J. P., Palle, K. C., Mikhov, M. K., Skromme, B., Meidia, H. & Mahajan, S., Jul 2004, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 22, 4, p. 1351-1355 5 p.

Research output: Contribution to journalArticle

Electron emission
Ballistics
ballistics
electron emission
Microscopic examination
10 Citations (Scopus)

Correlated structural and optical characterization of ammonothermally grown bulk GaN

Bai, J., Dudley, M., Raghothamachar, B., Gouma, P., Skromme, B., Chen, L., Hartlieb, P. J., Michaels, E. & Kolis, J. W., Apr 26 2004, In : Applied Physics Letters. 84, 17, p. 3289-3291 3 p.

Research output: Contribution to journalArticle

photoluminescence
crystal defects
transmission electron microscopy
crystals
topography
16 Citations (Scopus)

Properties of the 3.4 eV luminescence band in GaN and its relation to stacking faults

Skromme, B., Chen, L., Mikhov, M. K., Yamane, H., Aoki, M. & Disalvo, F. J., 2004, In : Materials Science Forum. 457-460, II, p. 1613-1616 4 p.

Research output: Contribution to journalArticle

Stacking faults
Full width at half maximum
crystal defects
Semiconductor quantum wells
Luminescence
32 Citations (Scopus)

Quantum well state of self-forming 3C-SiC inclusions in 4H SiC determined by ballistic electron emission microscopy

Ding, Y., Park, K. B., Pelz, J. P., Palle, K. C., Mikhov, M. K., Skromme, B., Meidia, H. & Mahajan, S., Jan 2004, In : Physical Review B - Condensed Matter and Materials Physics. 69, 4, p. 413051-413054 4 p., 041305.

Research output: Contribution to journalArticle

Electron emission
Ballistics
ballistics
electron emission
Semiconductor quantum wells
2002
24 Citations (Scopus)

Optical characterization of bulk GaN grown by a Na-Ga melt technique

Skromme, B., Palle, K., Poweleit, C. D., Yamane, H., Aoki, M. & DiSalvo, F. J., Dec 16 2002, In : Journal of Crystal Growth. 246, 3-4, p. 299-306 8 p.

Research output: Contribution to journalArticle

Platelets
platelets
Photoluminescence
Full width at half maximum
photoluminescence
31 Citations (Scopus)

Optical spectroscopy of bulk GaN crystals grown from a Na-Ga melt

Skromme, B., Palle, K. C., Poweleit, C. D., Yamane, H., Aoki, M. & DiSalvo, F. J., Nov 11 2002, In : Applied Physics Letters. 81, 20, p. 3765-3767 3 p.

Research output: Contribution to journalArticle

zinc
gallium nitrides
spectroscopy
crystals
purity
56 Citations (Scopus)

Oxidation-induced crystallographic transformation in heavily N-doped 4H-SiC wafers

Skromme, B., Palle, K., Poweleit, C. D., Bryant, L. R., Vetter, W. M., Dudley, M., Moore, K. & Gehoski, T., 2002, In : Materials Science Forum. 389-393, 1, p. 455-458 4 p.

Research output: Contribution to journalArticle

Topography
Photoluminescence
Metals
wafers
boules
2001

Characterization of ion implanted GaN

Skromme, B., Martinez, G. L., Krasnobaev, L. & Poker, D. B., 2001, In : Materials Research Society Symposium - Proceedings. 639, p. G11.39.1-G11.39.6

Research output: Contribution to journalArticle

Excitons
Vacancies
Photoluminescence
Ions
implantation
2000
89 Citations (Scopus)

Electrical characteristics of Schottky barriers on 4H-SiC: The effects of barrier height nonuniformity

Skromme, B., Luckowski, E., Moore, K., Bhatnagar, M., Weitzel, C. E., Gehoski, T. & Ganser, D., Mar 2000, In : Journal of Electronic Materials. 29, 3, p. 376-383 8 p.

Research output: Contribution to journalArticle

nonuniformity
Electric potential
Induced currents
electric potential
wafers

Optical activation behavior of ion implanted acceptor species in GaN

Skromme, B. & Martinez, G. L., 2000, In : MRS Internet Journal of Nitride Semiconductor Research. 5, SUPPL. 1

Research output: Contribution to journalArticle

Chemical activation
Ions
Hydrides
Excitons
Ion implantation
57 Citations (Scopus)

Surface recombination and sulfide passivation of GaN

Martinez, G. L., Curiel, M. R., Skromme, B. & Molnar, R. J., Mar 2000, In : Journal of Electronic Materials. 29, 3, p. 325-331 7 p.

Research output: Contribution to journalArticle

Sulfides
Passivation
passivity
sulfides
Photoluminescence
1999
65 Citations (Scopus)

Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy

Skromme, B., Jayapalan, J., Vaudo, R. P. & Phanse, V. M., Apr 19 1999, In : Applied Physics Letters. 74, 16, p. 2358-2360 3 p.

Research output: Contribution to journalArticle

vapor phase epitaxy
hydrides
excitons
luminescence
data structures
2 Citations (Scopus)
Gallium nitride
Photoluminescence
Excitons
Vapor phase epitaxy
Hydrides
1998
72 Citations (Scopus)

Optical spectroscopy of Si-related donor and acceptor levels in Si-doped GaN grown by hydride vapor phase epitaxy

Jayapalan, J., Skromme, B., Vaudo, R. P. & Phanse, V. M., 1998, In : Applied Physics Letters. 73, 9, p. 1188-1190 3 p.

Research output: Contribution to journalArticle

vapor phase epitaxy
hydrides
binding energy
excitons
spectroscopy
1997
35 Citations (Scopus)

Optical and magneto-optical characterization of heteroepitaxial gallium nitride

Skromme, B., Dec 18 1997, In : Materials Science and Engineering B. 50, 1-3, p. 117-125 9 p.

Research output: Contribution to journalArticle

Gallium nitride
gallium nitrides
Excitons
excitons
Binding energy
4 Citations (Scopus)

Optical investigation of strain and defects in (100) CdTe/Ge/Si and ZnTe/Ge/Si grown by molecular beam epitaxy

Hutchins, J. W., Skromme, B., Chen, Y. P., Sivananthan, S. & Posthill, J. B., Jul 21 1997, In : Applied Physics Letters. 71, 3, p. 350-352 3 p.

Research output: Contribution to journalArticle

molecular beam epitaxy
photoluminescence
defects
stress relaxation
linear polarization
54 Citations (Scopus)

Strain determination in heteroepitaxial GaN

Skromme, B., Zhao, H., Wang, D., Kong, H. S., Leonard, M. T., Bulman, G. E. & Molnar, R. J., Aug 11 1997, In : Applied Physics Letters. 71, 6, p. 829-831 3 p.

Research output: Contribution to journalArticle

lattice parameters
sapphire
excitons
platelets
curvature
1996
10 Citations (Scopus)

Heteroepitaxial CdTe(111) grown by MBE on nominally flat and misoriented Si(001) substrates: Characterization by electron microscopy and optical methods

Tsen, S. C. Y., Smith, D., Hutchins, J. W., Skromme, B., Chen, Y. P. & Sivananthan, S., Feb 1996, In : Journal of Crystal Growth. 159, 1-4, p. 58-63 6 p.

Research output: Contribution to journalArticle

Molecular beam epitaxy
Excitons
Electron microscopy
electron microscopy
Photoluminescence

Ion beam mixing in ZnSe/CdZnSe strained layer structures

Morton, R., Deng, F., Lau, S. S., Xin, S., Furdyna, J. K., Hutchins, J. W., Skromme, B. & Mayer, J. W., Sep 1996, In : Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 118, 1-4, p. 704-708 5 p.

Research output: Contribution to journalArticle

Ion beams
ion beams
Temperature
temperature
Ions
13 Citations (Scopus)

MnS/ZnSe on GaAs grown by molecular beam epitaxy

Sivananthan, S., Wang, L., Sporken, R., Chen, J., Skromme, B. & Smith, D., Feb 1996, In : Journal of Crystal Growth. 159, 1-4, p. 94-98 5 p.

Research output: Contribution to journalArticle

Molecular beam epitaxy
molecular beam epitaxy
X ray photoelectron spectroscopy
photoelectron spectroscopy
Photoluminescence
3 Citations (Scopus)

Optical characterization of ZnMnSSe quaternary alloys for visible light emitting devices

Hutchins, J. W., Parameshwaran, B., Skromme, B., Smith, D. & Sivananthan, S., Feb 1996, In : Journal of Crystal Growth. 159, 1-4, p. 50-53 4 p.

Research output: Contribution to journalArticle

quaternary alloys
Heterojunctions
quantum wells
Quantum confinement
Molecular beam epitaxy
1995
22 Citations (Scopus)

Deep-center photoluminescence in nitrogen-doped ZnSe

Hauksson, I. S., Wang, S. Y., Simpson, J., Prior, K. A., Cavenett, B. C., Liu, W. & Skromme, B., 1995, In : Physical Review B. 52, 24, p. 17184-17190 7 p.

Research output: Contribution to journalArticle

Epilayers
Excitons
Photoluminescence
Nitrogen
Activation energy
54 Citations (Scopus)

Growth and characterization of pseudomorphic single crystal zinc blende Mn

Skromme, B., Zhang, Y-H., Smith, D. & Sivananthan, S., 1995, In : Applied Physics Letters. 67, p. 2690 1 p.

Research output: Contribution to journalArticle

zinc
single crystals
halites
high energy electrons
molecular beam epitaxy
9 Citations (Scopus)

Luminescence as a diagnostic of wide-gap II-VI compound semiconductor materials

Skromme, B., 1995, In : Annual Review of Materials Science. 25, 1, p. 601-646 46 p.

Research output: Contribution to journalArticle

Plasma diagnostics
Luminescence
Metallorganic chemical vapor deposition
Impurities
Semiconductor materials
20 Citations (Scopus)

Properties of the shallow O-related acceptor level in ZnSe

Chen, J., Zhang, Y-H., Skromme, B., Akimoto, K. & Pachuta, S. J., 1995, In : Journal of Applied Physics. 78, 8, p. 5109-5119 11 p.

Research output: Contribution to journalArticle

molecular beam epitaxy
luminescence
excitation
zinc selenides
impurities
1994
15 Citations (Scopus)

Effects of C incorporation on the luminescence properties of ZnSe grown by metalorganic chemical vapor deposition

Skromme, B., Liu, W., Jensen, K. F. & Giapis, K. P., Apr 2 1994, In : Journal of Crystal Growth. 138, 1-4, p. 338-345 8 p.

Research output: Contribution to journalArticle

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Luminescence
Photoluminescence
luminescence
17 Citations (Scopus)

Systematic investigation of shallow acceptor levels in ZnSe

Zhang, Y-H., Liu, W., Skromme, B., Cheng, H., Shibli, S. M. & Tamargo, M. C., Apr 2 1994, In : Journal of Crystal Growth. 138, 1-4, p. 310-317 8 p.

Research output: Contribution to journalArticle

Excited states
Diamond
Ionization potential
Molecular beam epitaxy
Temperature
1993
19 Citations (Scopus)
Electron transitions
Molecular beam epitaxy
Luminescence
molecular beam epitaxy
luminescence
18 Citations (Scopus)

Properties of the As-related shallow acceptor level in heteroepitaxial ZnSe grown by molecular-beam epitaxy

Zhang, Y-H., Skromme, B., Shibli, S. M. & Tamargo, M. C., 1993, In : Physical Review B. 48, 15, p. 10885-10892 8 p.

Research output: Contribution to journalArticle

Molecular beam epitaxy
Excitons
molecular beam epitaxy
Luminescence
Photoluminescence
1992
3 Citations (Scopus)

Characteristics of GaAs, AlGaAs, and InGaAs materials grown by metalorganic chemical vapor deposition using an on-demand hydride gas generator

Hummel, S. G., Zou, Y., Beyler, C. A., Grodzinski, P., Dapkus, P. D., McManus, J. V., Zhang, Y-H., Skromme, B. & Lee, W. I., 1992, In : Applied Physics Letters. 60, 12, p. 1483-1485 3 p.

Research output: Contribution to journalArticle

gas generators
hydrides
metalorganic chemical vapor deposition
aluminum gallium arsenides
excitons
48 Citations (Scopus)

Effects of thermal strain on the optical properties of heteroepitaxial ZnTe

Zhang, Y-H., Skromme, B. & Turco-Sandroff, F. S., 1992, In : Physical Review B. 46, 7, p. 3872-3885 14 p.

Research output: Contribution to journalArticle

Optical properties
excitons
Excitons
optical properties
photoluminescence
1991
18 Citations (Scopus)

Arsenic-doped P-type ZnTe grown by molecular beam epitaxy

Turco-Sandroff, F. S., Brasil, M. J. S. P., Nahory, R. E., Martin, R. J., Zhang, Y-H. & Skromme, B., 1991, In : Applied Physics Letters. 59, 6, p. 688-690 3 p.

Research output: Contribution to journalArticle

arsenic
molecular beam epitaxy
photoconductivity
electrical measurement
saturation
11 Citations (Scopus)

Hall effect analysis of high purity p-type GaAs grown by metalorganic chemical vapor deposition

Kim, M. H., Bose, S. S., Skromme, B., Lee, B. & Stillman, G. E., Sep 1991, In : Journal of Electronic Materials. 20, 9, p. 671-679 9 p.

Research output: Contribution to journalArticle

Hall effect
Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
purity
Impurities
29 Citations (Scopus)

Surface stoichiometry effects on ZnSe/GaAs heteroepitaxy

Tamargo, M. C., Nahory, R. E., Skromme, B., Shibli, S. M., Weaver, A. L., Martin, R. J. & Farrell, H. H., May 2 1991, In : Journal of Crystal Growth. 111, 1-4, p. 741-746 6 p.

Research output: Contribution to journalArticle

Surface reconstruction
Epitaxial growth
Stoichiometry
stoichiometry
Photocurrents
1990
20 Citations (Scopus)

Vertical transport in semiconductor superlattices probed by miniband-to-acceptor magnetoluminescence

Skromme, B., Bhat, R., Koza, M. A., Schwarz, S. A., Ravi, T. S. & Hwang, D. M., 1990, In : Physical Review Letters. 65, 16, p. 2050-2053 4 p.

Research output: Contribution to journalArticle

cyclotrons
superlattices
aluminum gallium arsenides
conduction bands
breakdown
1989
17 Citations (Scopus)

Atomic layer epitaxy of device quality GaAs

Colas, E., Bhat, R., Skromme, B. & Nihous, G. C., 1989, In : Applied Physics Letters. 55, 26, p. 2769-2771 3 p.

Research output: Contribution to journalArticle

atomic layer epitaxy
purity
reactors
vapor deposition
photoluminescence
77 Citations (Scopus)

Band bending, Fermi level pinning, and surface fixed charge on chemically prepared GaAs surfaces

Yablonovitch, E., Skromme, B., Bhat, R., Harbison, J. P. & Gmitter, T. J., 1989, In : Applied Physics Letters. 54, 6, p. 555-557 3 p.

Research output: Contribution to journalArticle

sulfides
illumination
injection
electrons
11 Citations (Scopus)

Electrical characterization of gallium planar-doped ZnSe grown by molecular-beam epitaxy

Shibli, S. M., Tamargo, M. C., De Miguel, J. L., Skromme, B., Nahory, R. E. & Farrell, H. H., 1989, In : Journal of Applied Physics. 66, 9, p. 4295-4300 6 p.

Research output: Contribution to journalArticle

gallium
molecular beam epitaxy
impurities
scattering
10 Citations (Scopus)

Identification of donors in GaAs by resonantly excited high-field magnetospectroscopy

Skromme, B., Bhat, R., Cox, H. M. & Colas, E., May 1989, In : IEEE Journal of Quantum Electronics. 25, 5 pt 1, p. 1035-1045 11 p.

Research output: Contribution to journalArticle

Excitons
excitons
excitation
Dye lasers
Excitation energy