Yttrium-doped zinc oxide as a terawatt-scale transparent conducting oxide

Meng Tao; Xiaofei Han

doi:10.1149/1.3553343

Yttrium-doped zinc oxide as a terawatt-scale transparent conducting oxide

Meng Tao, Xiaofei Han

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The desirable features of an ideal transparent conducting oxide for terawatt-scale solar cells include abundant raw materials, low cost, high performance, and low process temperature. In this paper we examine all the Group IIIA and IIIB elements as potential n-type dopants for ZnO and suggest yttrium as an ideal dopant for this purpose. Experimental results on electrodeposited yttrium-doped ZnO are presented. The lowest resistivity in yttrium-doped ZnO is 6.3×10 ^-5 Ω-cm, while the average resistivity is ∼2×10 ^-4 Ω-cm. The maximum process temperature is 300°C. The transmittance of yttrium-doped ZnO is ∼80%. Thermal stability of yttrium-doped ZnO is also investigated. It has a real chance to become an industry standard transparent conducting oxide for terawatt-scale solar cells, as its performance is comparable to indium tin oxide, its deposition is solution-based, and yttrium is abundant.

Original language	English (US)
Title of host publication	Photovoltaics for the 21st Century 6\
Pages	13-22
Number of pages	10
Edition	17
DOIs	https://doi.org/10.1149/1.3553343
State	Published - Dec 1 2011
Externally published	Yes
Event	Photovoltaics for the 21st Century 6 - 218th ECS Meeting - Las Vegas, NV, United States Duration: Oct 10 2010 → Oct 15 2010

Publication series

Name	ECS Transactions
Number	17
Volume	33
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Photovoltaics for the 21st Century 6 - 218th ECS Meeting
Country	United States
City	Las Vegas, NV
Period	10/10/10 → 10/15/10

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.3553343

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abstract = "The desirable features of an ideal transparent conducting oxide for terawatt-scale solar cells include abundant raw materials, low cost, high performance, and low process temperature. In this paper we examine all the Group IIIA and IIIB elements as potential n-type dopants for ZnO and suggest yttrium as an ideal dopant for this purpose. Experimental results on electrodeposited yttrium-doped ZnO are presented. The lowest resistivity in yttrium-doped ZnO is 6.3×10 -5 Ω-cm, while the average resistivity is ∼2×10 -4 Ω-cm. The maximum process temperature is 300°C. The transmittance of yttrium-doped ZnO is ∼80%. Thermal stability of yttrium-doped ZnO is also investigated. It has a real chance to become an industry standard transparent conducting oxide for terawatt-scale solar cells, as its performance is comparable to indium tin oxide, its deposition is solution-based, and yttrium is abundant.",

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N2 - The desirable features of an ideal transparent conducting oxide for terawatt-scale solar cells include abundant raw materials, low cost, high performance, and low process temperature. In this paper we examine all the Group IIIA and IIIB elements as potential n-type dopants for ZnO and suggest yttrium as an ideal dopant for this purpose. Experimental results on electrodeposited yttrium-doped ZnO are presented. The lowest resistivity in yttrium-doped ZnO is 6.3×10 -5 Ω-cm, while the average resistivity is ∼2×10 -4 Ω-cm. The maximum process temperature is 300°C. The transmittance of yttrium-doped ZnO is ∼80%. Thermal stability of yttrium-doped ZnO is also investigated. It has a real chance to become an industry standard transparent conducting oxide for terawatt-scale solar cells, as its performance is comparable to indium tin oxide, its deposition is solution-based, and yttrium is abundant.

AB - The desirable features of an ideal transparent conducting oxide for terawatt-scale solar cells include abundant raw materials, low cost, high performance, and low process temperature. In this paper we examine all the Group IIIA and IIIB elements as potential n-type dopants for ZnO and suggest yttrium as an ideal dopant for this purpose. Experimental results on electrodeposited yttrium-doped ZnO are presented. The lowest resistivity in yttrium-doped ZnO is 6.3×10 -5 Ω-cm, while the average resistivity is ∼2×10 -4 Ω-cm. The maximum process temperature is 300°C. The transmittance of yttrium-doped ZnO is ∼80%. Thermal stability of yttrium-doped ZnO is also investigated. It has a real chance to become an industry standard transparent conducting oxide for terawatt-scale solar cells, as its performance is comparable to indium tin oxide, its deposition is solution-based, and yttrium is abundant.

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