Yttrium-doped zinc oxide as a terawatt-scale transparent conducting oxide

Meng Tao, Xiaofei Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The desirable features of an ideal transparent conducting oxide for terawatt-scale solar cells include abundant raw materials, low cost, high performance, and low process temperature. In this paper we examine all the Group IIIA and IIIB elements as potential n-type dopants for ZnO and suggest yttrium as an ideal dopant for this purpose. Experimental results on electrodeposited yttrium-doped ZnO are presented. The lowest resistivity in yttrium-doped ZnO is 6.3×10 -5 Ω-cm, while the average resistivity is ∼2×10 -4 Ω-cm. The maximum process temperature is 300°C. The transmittance of yttrium-doped ZnO is ∼80%. Thermal stability of yttrium-doped ZnO is also investigated. It has a real chance to become an industry standard transparent conducting oxide for terawatt-scale solar cells, as its performance is comparable to indium tin oxide, its deposition is solution-based, and yttrium is abundant.

Original languageEnglish (US)
Title of host publicationPhotovoltaics for the 21st Century 6\
Pages13-22
Number of pages10
Edition17
DOIs
StatePublished - Dec 1 2011
Externally publishedYes
EventPhotovoltaics for the 21st Century 6 - 218th ECS Meeting - Las Vegas, NV, United States
Duration: Oct 10 2010Oct 15 2010

Publication series

NameECS Transactions
Number17
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherPhotovoltaics for the 21st Century 6 - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1010/15/10

ASJC Scopus subject areas

  • Engineering(all)

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