Abstract
The desirable features of an ideal transparent conducting oxide for terawatt-scale solar cells include abundant raw materials, low cost, high performance, and low process temperature. In this paper we examine all the Group IIIA and IIIB elements as potential n-type dopants for ZnO and suggest yttrium as an ideal dopant for this purpose. Experimental results on electrodeposited yttrium-doped ZnO are presented. The lowest resistivity in yttrium-doped ZnO is 6.3×10 -5 Ω-cm, while the average resistivity is ∼2×10 -4 Ω-cm. The maximum process temperature is 300°C. The transmittance of yttrium-doped ZnO is ∼80%. Thermal stability of yttrium-doped ZnO is also investigated. It has a real chance to become an industry standard transparent conducting oxide for terawatt-scale solar cells, as its performance is comparable to indium tin oxide, its deposition is solution-based, and yttrium is abundant.
| Original language | English (US) |
|---|---|
| Title of host publication | ECS Transactions |
| Pages | 13-22 |
| Number of pages | 10 |
| Volume | 33 |
| Edition | 17 |
| DOIs | |
| State | Published - 2011 |
| Externally published | Yes |
| Event | Photovoltaics for the 21st Century 6 - 218th ECS Meeting - Las Vegas, NV, United States Duration: Oct 10 2010 → Oct 15 2010 |
Other
| Other | Photovoltaics for the 21st Century 6 - 218th ECS Meeting |
|---|---|
| Country | United States |
| City | Las Vegas, NV |
| Period | 10/10/10 → 10/15/10 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Yttrium-doped zinc oxide as a terawatt-scale transparent conducting oxide. / Tao, Meng; Han, Xiaofei.
ECS Transactions. Vol. 33 17. ed. 2011. p. 13-22.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Yttrium-doped zinc oxide as a terawatt-scale transparent conducting oxide
AU - Tao, Meng
AU - Han, Xiaofei
PY - 2011
Y1 - 2011
N2 - The desirable features of an ideal transparent conducting oxide for terawatt-scale solar cells include abundant raw materials, low cost, high performance, and low process temperature. In this paper we examine all the Group IIIA and IIIB elements as potential n-type dopants for ZnO and suggest yttrium as an ideal dopant for this purpose. Experimental results on electrodeposited yttrium-doped ZnO are presented. The lowest resistivity in yttrium-doped ZnO is 6.3×10 -5 Ω-cm, while the average resistivity is ∼2×10 -4 Ω-cm. The maximum process temperature is 300°C. The transmittance of yttrium-doped ZnO is ∼80%. Thermal stability of yttrium-doped ZnO is also investigated. It has a real chance to become an industry standard transparent conducting oxide for terawatt-scale solar cells, as its performance is comparable to indium tin oxide, its deposition is solution-based, and yttrium is abundant.
AB - The desirable features of an ideal transparent conducting oxide for terawatt-scale solar cells include abundant raw materials, low cost, high performance, and low process temperature. In this paper we examine all the Group IIIA and IIIB elements as potential n-type dopants for ZnO and suggest yttrium as an ideal dopant for this purpose. Experimental results on electrodeposited yttrium-doped ZnO are presented. The lowest resistivity in yttrium-doped ZnO is 6.3×10 -5 Ω-cm, while the average resistivity is ∼2×10 -4 Ω-cm. The maximum process temperature is 300°C. The transmittance of yttrium-doped ZnO is ∼80%. Thermal stability of yttrium-doped ZnO is also investigated. It has a real chance to become an industry standard transparent conducting oxide for terawatt-scale solar cells, as its performance is comparable to indium tin oxide, its deposition is solution-based, and yttrium is abundant.
UR - http://www.scopus.com/inward/record.url?scp=84857413266&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84857413266&partnerID=8YFLogxK
U2 - 10.1149/1.3553343
DO - 10.1149/1.3553343
M3 - Conference contribution
SN - 9781607682233
VL - 33
SP - 13
EP - 22
BT - ECS Transactions
ER -