Yttrium-doped zinc oxide as a terawatt-scale transparent conducting oxide

Meng Tao, Xiaofei Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The desirable features of an ideal transparent conducting oxide for terawatt-scale solar cells include abundant raw materials, low cost, high performance, and low process temperature. In this paper we examine all the Group IIIA and IIIB elements as potential n-type dopants for ZnO and suggest yttrium as an ideal dopant for this purpose. Experimental results on electrodeposited yttrium-doped ZnO are presented. The lowest resistivity in yttrium-doped ZnO is 6.3×10 -5 Ω-cm, while the average resistivity is ∼2×10 -4 Ω-cm. The maximum process temperature is 300°C. The transmittance of yttrium-doped ZnO is ∼80%. Thermal stability of yttrium-doped ZnO is also investigated. It has a real chance to become an industry standard transparent conducting oxide for terawatt-scale solar cells, as its performance is comparable to indium tin oxide, its deposition is solution-based, and yttrium is abundant.

Original languageEnglish (US)
Title of host publicationECS Transactions
Pages13-22
Number of pages10
Volume33
Edition17
DOIs
StatePublished - 2011
Externally publishedYes
EventPhotovoltaics for the 21st Century 6 - 218th ECS Meeting - Las Vegas, NV, United States
Duration: Oct 10 2010Oct 15 2010

Other

OtherPhotovoltaics for the 21st Century 6 - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1010/15/10

Fingerprint

Yttrium
Zinc oxide
Oxides
Solar cells
Doping (additives)
Tin oxides
Chemical elements
Indium
Raw materials
Thermodynamic stability
Temperature
Costs
Industry

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yttrium-doped zinc oxide as a terawatt-scale transparent conducting oxide. / Tao, Meng; Han, Xiaofei.

ECS Transactions. Vol. 33 17. ed. 2011. p. 13-22.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tao, M & Han, X 2011, Yttrium-doped zinc oxide as a terawatt-scale transparent conducting oxide. in ECS Transactions. 17 edn, vol. 33, pp. 13-22, Photovoltaics for the 21st Century 6 - 218th ECS Meeting, Las Vegas, NV, United States, 10/10/10. https://doi.org/10.1149/1.3553343
Tao, Meng ; Han, Xiaofei. / Yttrium-doped zinc oxide as a terawatt-scale transparent conducting oxide. ECS Transactions. Vol. 33 17. ed. 2011. pp. 13-22
@inproceedings{b5a4acae115e4e958b8ace563bb9f885,
title = "Yttrium-doped zinc oxide as a terawatt-scale transparent conducting oxide",
abstract = "The desirable features of an ideal transparent conducting oxide for terawatt-scale solar cells include abundant raw materials, low cost, high performance, and low process temperature. In this paper we examine all the Group IIIA and IIIB elements as potential n-type dopants for ZnO and suggest yttrium as an ideal dopant for this purpose. Experimental results on electrodeposited yttrium-doped ZnO are presented. The lowest resistivity in yttrium-doped ZnO is 6.3×10 -5 Ω-cm, while the average resistivity is ∼2×10 -4 Ω-cm. The maximum process temperature is 300°C. The transmittance of yttrium-doped ZnO is ∼80{\%}. Thermal stability of yttrium-doped ZnO is also investigated. It has a real chance to become an industry standard transparent conducting oxide for terawatt-scale solar cells, as its performance is comparable to indium tin oxide, its deposition is solution-based, and yttrium is abundant.",
author = "Meng Tao and Xiaofei Han",
year = "2011",
doi = "10.1149/1.3553343",
language = "English (US)",
isbn = "9781607682233",
volume = "33",
pages = "13--22",
booktitle = "ECS Transactions",
edition = "17",

}

TY - GEN

T1 - Yttrium-doped zinc oxide as a terawatt-scale transparent conducting oxide

AU - Tao, Meng

AU - Han, Xiaofei

PY - 2011

Y1 - 2011

N2 - The desirable features of an ideal transparent conducting oxide for terawatt-scale solar cells include abundant raw materials, low cost, high performance, and low process temperature. In this paper we examine all the Group IIIA and IIIB elements as potential n-type dopants for ZnO and suggest yttrium as an ideal dopant for this purpose. Experimental results on electrodeposited yttrium-doped ZnO are presented. The lowest resistivity in yttrium-doped ZnO is 6.3×10 -5 Ω-cm, while the average resistivity is ∼2×10 -4 Ω-cm. The maximum process temperature is 300°C. The transmittance of yttrium-doped ZnO is ∼80%. Thermal stability of yttrium-doped ZnO is also investigated. It has a real chance to become an industry standard transparent conducting oxide for terawatt-scale solar cells, as its performance is comparable to indium tin oxide, its deposition is solution-based, and yttrium is abundant.

AB - The desirable features of an ideal transparent conducting oxide for terawatt-scale solar cells include abundant raw materials, low cost, high performance, and low process temperature. In this paper we examine all the Group IIIA and IIIB elements as potential n-type dopants for ZnO and suggest yttrium as an ideal dopant for this purpose. Experimental results on electrodeposited yttrium-doped ZnO are presented. The lowest resistivity in yttrium-doped ZnO is 6.3×10 -5 Ω-cm, while the average resistivity is ∼2×10 -4 Ω-cm. The maximum process temperature is 300°C. The transmittance of yttrium-doped ZnO is ∼80%. Thermal stability of yttrium-doped ZnO is also investigated. It has a real chance to become an industry standard transparent conducting oxide for terawatt-scale solar cells, as its performance is comparable to indium tin oxide, its deposition is solution-based, and yttrium is abundant.

UR - http://www.scopus.com/inward/record.url?scp=84857413266&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84857413266&partnerID=8YFLogxK

U2 - 10.1149/1.3553343

DO - 10.1149/1.3553343

M3 - Conference contribution

SN - 9781607682233

VL - 33

SP - 13

EP - 22

BT - ECS Transactions

ER -