XPS measurement of the SiC/AlN band-offset at the (0001) interface

Sean W. King, Mark C. Benjamin, Robert Nemanich, Robert F. Davis, Walter R L Lambrecht

Research output: Chapter in Book/Report/Conference proceedingConference contribution

22 Scopus citations

Abstract

X-ray photoelectron spectroscopy is used to determine the band-offset at the SiC/AlN (0001) interface. First, the valence band spectra are determined for bulk materials and analyzed with the help of calculated densities of states. Core levels are then measured across the interface for a thin film of 2H-AlN on 6H-SiC and allow us to extract a band offset of 1.4 ±0.3 eV. The analysis of the discrepancies between measured peak positions and densities of states obtained within the local density approximation provides information on self-energy corrections in good agreement with independent calculations of the latter.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages375-380
Number of pages6
Volume395
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 26 1995Dec 1 1995

Other

OtherProceedings of the 1995 MRS Fall Meeting
CityBoston, MA, USA
Period11/26/9512/1/95

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    King, S. W., Benjamin, M. C., Nemanich, R., Davis, R. F., & Lambrecht, W. R. L. (1996). XPS measurement of the SiC/AlN band-offset at the (0001) interface. In Materials Research Society Symposium - Proceedings (Vol. 395, pp. 375-380). Materials Research Society.