XPS measurement of the SiC/AlN band-offset at the (0001) interface

Sean W. King; Mark C. Benjamin; Robert Nemanich; Robert F. Davis; Walter R L Lambrecht

XPS measurement of the SiC/AlN band-offset at the (0001) interface

Sean W. King, Mark C. Benjamin, Robert Nemanich, Robert F. Davis, Walter R L Lambrecht

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

X-ray photoelectron spectroscopy is used to determine the band-offset at the SiC/AlN (0001) interface. First, the valence band spectra are determined for bulk materials and analyzed with the help of calculated densities of states. Core levels are then measured across the interface for a thin film of 2H-AlN on 6H-SiC and allow us to extract a band offset of 1.4 ±0.3 eV. The analysis of the discrepancies between measured peak positions and densities of states obtained within the local density approximation provides information on self-energy corrections in good agreement with independent calculations of the latter.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	Materials Research Society
Pages	375-380
Number of pages	6
Volume	395
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: Nov 26 1995 → Dec 1 1995

Other

Other	Proceedings of the 1995 MRS Fall Meeting
City	Boston, MA, USA
Period	11/26/95 → 12/1/95

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

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title = "XPS measurement of the SiC/AlN band-offset at the (0001) interface",

abstract = "X-ray photoelectron spectroscopy is used to determine the band-offset at the SiC/AlN (0001) interface. First, the valence band spectra are determined for bulk materials and analyzed with the help of calculated densities of states. Core levels are then measured across the interface for a thin film of 2H-AlN on 6H-SiC and allow us to extract a band offset of 1.4 ±0.3 eV. The analysis of the discrepancies between measured peak positions and densities of states obtained within the local density approximation provides information on self-energy corrections in good agreement with independent calculations of the latter.",

author = "King, {Sean W.} and Benjamin, {Mark C.} and Robert Nemanich and Davis, {Robert F.} and Lambrecht, {Walter R L}",

year = "1996",

language = "English (US)",

volume = "395",

pages = "375--380",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Fall Meeting ; Conference date: 26-11-1995 Through 01-12-1995",

}

TY - GEN

T1 - XPS measurement of the SiC/AlN band-offset at the (0001) interface

AU - King, Sean W.

AU - Benjamin, Mark C.

AU - Nemanich, Robert

AU - Davis, Robert F.

AU - Lambrecht, Walter R L

PY - 1996

Y1 - 1996

N2 - X-ray photoelectron spectroscopy is used to determine the band-offset at the SiC/AlN (0001) interface. First, the valence band spectra are determined for bulk materials and analyzed with the help of calculated densities of states. Core levels are then measured across the interface for a thin film of 2H-AlN on 6H-SiC and allow us to extract a band offset of 1.4 ±0.3 eV. The analysis of the discrepancies between measured peak positions and densities of states obtained within the local density approximation provides information on self-energy corrections in good agreement with independent calculations of the latter.

AB - X-ray photoelectron spectroscopy is used to determine the band-offset at the SiC/AlN (0001) interface. First, the valence band spectra are determined for bulk materials and analyzed with the help of calculated densities of states. Core levels are then measured across the interface for a thin film of 2H-AlN on 6H-SiC and allow us to extract a band offset of 1.4 ±0.3 eV. The analysis of the discrepancies between measured peak positions and densities of states obtained within the local density approximation provides information on self-energy corrections in good agreement with independent calculations of the latter.

UR - http://www.scopus.com/inward/record.url?scp=0029748467&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029748467&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0029748467

VL - 395

SP - 375

EP - 380

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

T2 - Proceedings of the 1995 MRS Fall Meeting

Y2 - 26 November 1995 through 1 December 1995

ER -

XPS measurement of the SiC/AlN band-offset at the (0001) interface

Abstract

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ASJC Scopus subject areas

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