X-ray diffraction and high resolution transmission electron microscopy of 3C-SiC/AlN/6H-SiC(0001)

J. H. Edgar, Z. J. Yu, David Smith, J. Chaudhuri, X. Cheng

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

The structure and crystal quality of epitaxial films of SiC/AlN/6H-SiC(0001) prepared by chemical vapor deposition were evaluated by high resolution transmission electron microscopy (HRTEM) and x-ray diffraction techniques. Cross-sectional HRTEM revealed an abrupt AlN layer-6H-SiC substrate junction, but the transition between the AlN and SiC layers was much rougher, leading to the formation of a highly disordered SiC region adjacent to the interface. The AlN layer was relatively defect free, while the SiC layer contained many microtwins and stacking faults originating at the top SiC/AlN interface. The SiC layer was the 3C-polytype, as determined by double crystal x-ray rocking curves. The SiC layers were under in-plane compressive stress, with calculated defect density between 2-4 × 107 defects/cm-2.

Original languageEnglish (US)
Pages (from-to)1389-1393
Number of pages5
JournalJournal of Electronic Materials
Volume26
Issue number12
DOIs
StatePublished - Dec 1997

Keywords

  • Chemical vapor deposition (CVD)
  • High resolution transmission electron microscopy (HRTEM)
  • SiC/AlN

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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