Abstract
The structure and crystal quality of epitaxial films of SiC/AlN/6H-SiC(0001) prepared by chemical vapor deposition were evaluated by high resolution transmission electron microscopy (HRTEM) and x-ray diffraction techniques. Cross-sectional HRTEM revealed an abrupt AlN layer-6H-SiC substrate junction, but the transition between the AlN and SiC layers was much rougher, leading to the formation of a highly disordered SiC region adjacent to the interface. The AlN layer was relatively defect free, while the SiC layer contained many microtwins and stacking faults originating at the top SiC/AlN interface. The SiC layer was the 3C-polytype, as determined by double crystal x-ray rocking curves. The SiC layers were under in-plane compressive stress, with calculated defect density between 2-4 × 107 defects/cm-2.
Original language | English (US) |
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Pages (from-to) | 1389-1393 |
Number of pages | 5 |
Journal | Journal of Electronic Materials |
Volume | 26 |
Issue number | 12 |
DOIs | |
State | Published - Dec 1997 |
Keywords
- Chemical vapor deposition (CVD)
- High resolution transmission electron microscopy (HRTEM)
- SiC/AlN
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry