Abstract

We report on an alternative application of X-parameters to improve the efficiency of a general TCAD physical device simulator when simulating the response of a RF power transistor to different load impedance harmonic terminations. In particular, we combine large-signal circuit-device simulations with the predictive capability of X-parameters in order to avoid very time-consuming multi-harmonic simulations. The success of this approach, that is applicable to any physical device simulator, is validated by comparing the current-voltage waveforms of a standard GaN HEMT simulated through multi-harmonic termination device simulations with the ones predicted through X-parameters extracted from single-harmonic termination device simulations. The proposed method greatly improves the speed of the physical simulation of nonlinear device operations with different harmonic loading, the speed of the TCAD X-Parameter extraction, and also reduces convergence issues.

Original languageEnglish (US)
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479938698
DOIs
StatePublished - 2014
Event2014 IEEE MTT-S International Microwave Symposium, IMS 2014 - Tampa, FL, United States
Duration: Jun 1 2014Jun 6 2014

Other

Other2014 IEEE MTT-S International Microwave Symposium, IMS 2014
CountryUnited States
CityTampa, FL
Period6/1/146/6/14

Fingerprint

Wave power
transistors
Simulators
harmonics
Parameter extraction
High electron mobility transistors
simulation
simulators
Networks (circuits)
Electric potential
high electron mobility transistors
Power transistors
waveforms
impedance
electric potential

Keywords

  • GaN HEMT
  • Harmonic Loading
  • Monte Carlo
  • Nonlinear Modeling
  • TCAD
  • X-parameters

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation
  • Condensed Matter Physics

Cite this

Guerra, D., Saraniti, M., Ferry, D. K., & Goodnick, S. (2014). X-parameters and efficient physical device simulation of mm-wave power transistors with harmonic loading. In IEEE MTT-S International Microwave Symposium Digest [6848583] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MWSYM.2014.6848583

X-parameters and efficient physical device simulation of mm-wave power transistors with harmonic loading. / Guerra, Diego; Saraniti, Marco; Ferry, David K.; Goodnick, Stephen.

IEEE MTT-S International Microwave Symposium Digest. Institute of Electrical and Electronics Engineers Inc., 2014. 6848583.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Guerra, D, Saraniti, M, Ferry, DK & Goodnick, S 2014, X-parameters and efficient physical device simulation of mm-wave power transistors with harmonic loading. in IEEE MTT-S International Microwave Symposium Digest., 6848583, Institute of Electrical and Electronics Engineers Inc., 2014 IEEE MTT-S International Microwave Symposium, IMS 2014, Tampa, FL, United States, 6/1/14. https://doi.org/10.1109/MWSYM.2014.6848583
Guerra D, Saraniti M, Ferry DK, Goodnick S. X-parameters and efficient physical device simulation of mm-wave power transistors with harmonic loading. In IEEE MTT-S International Microwave Symposium Digest. Institute of Electrical and Electronics Engineers Inc. 2014. 6848583 https://doi.org/10.1109/MWSYM.2014.6848583
Guerra, Diego ; Saraniti, Marco ; Ferry, David K. ; Goodnick, Stephen. / X-parameters and efficient physical device simulation of mm-wave power transistors with harmonic loading. IEEE MTT-S International Microwave Symposium Digest. Institute of Electrical and Electronics Engineers Inc., 2014.
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