@inproceedings{67ac022ab3b14b3b92a76c858c0f48bf,
title = "X-parameters and efficient physical device simulation of mm-wave power transistors with harmonic loading",
abstract = "We report on an alternative application of X-parameters to improve the efficiency of a general TCAD physical device simulator when simulating the response of a RF power transistor to different load impedance harmonic terminations. In particular, we combine large-signal circuit-device simulations with the predictive capability of X-parameters in order to avoid very time-consuming multi-harmonic simulations. The success of this approach, that is applicable to any physical device simulator, is validated by comparing the current-voltage waveforms of a standard GaN HEMT simulated through multi-harmonic termination device simulations with the ones predicted through X-parameters extracted from single-harmonic termination device simulations. The proposed method greatly improves the speed of the physical simulation of nonlinear device operations with different harmonic loading, the speed of the TCAD X-Parameter extraction, and also reduces convergence issues.",
keywords = "GaN HEMT, Harmonic Loading, Monte Carlo, Nonlinear Modeling, TCAD, X-parameters",
author = "Diego Guerra and Marco Saraniti and Ferry, {David K.} and Stephen Goodnick",
year = "2014",
doi = "10.1109/MWSYM.2014.6848583",
language = "English (US)",
isbn = "9781479938698",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2014 IEEE MTT-S International Microwave Symposium, IMS 2014",
note = "2014 IEEE MTT-S International Microwave Symposium, IMS 2014 ; Conference date: 01-06-2014 Through 06-06-2014",
}