Work function engineering of single layer graphene by irradiation-induced defects

Jong Hun Kim, Jin Heui Hwang, Joonki Suh, Sefaattin Tongay, Sangku Kwon, C. C. Hwang, Junqiao Wu, Jeong Young Park

    Research output: Contribution to journalArticle

    80 Scopus citations

    Abstract

    We report the tuning of electrical properties of single layer graphene by α-beam irradiation. As the defect density increases upon irradiation, the surface potential of the graphene changes, as determined by Kelvin probe force microscopy and Raman spectroscopy studies. X-ray photoelectron spectroscopy studies indicate that the formation of C/O bonding is promoted as the dose of irradiation increases when at atmospheric conditions. Our results show that the surface potential of the graphene can be engineered by introducing atomic-scale defects via irradiation with high-energy particles.

    Original languageEnglish (US)
    Article number171604
    JournalApplied Physics Letters
    Volume103
    Issue number17
    DOIs
    StatePublished - Oct 21 2013

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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  • Cite this

    Kim, J. H., Hwang, J. H., Suh, J., Tongay, S., Kwon, S., Hwang, C. C., Wu, J., & Young Park, J. (2013). Work function engineering of single layer graphene by irradiation-induced defects. Applied Physics Letters, 103(17), [171604]. https://doi.org/10.1063/1.4826642