Abstract
We analyze the influence of contact electrons on quantum transport in a resonant-tunneling diode (RTD), using a many-body density matrix formalism for open systems. We explicitly relate the net current in the RTD to the memory-containing effective interaction between the RTD active region and the contacts. This effect can only be captured if the RTD active region is treated fully as a dynamically open system.
Original language | English (US) |
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Pages (from-to) | 367-370 |
Number of pages | 4 |
Journal | Superlattices and Microstructures |
Volume | 34 |
Issue number | 3-6 |
DOIs | |
State | Published - Sep 2003 |
Keywords
- Open system
- Quantum transport
- Resonant-tunneling diode
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Electrical and Electronic Engineering