Vth-control method in double gate field effect transistor domino circuits

Saeed Zeinolabedinzadeh, Behzad Ebrahimi, Ali Afzali-Kusha

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper we investigate the possibility of power reduction in DGFET devices by means of Vth control technique applied for domino logics. Previously the effectiveness of Vth control method by means of back gate biasing has been investigated. In this paper we show that by special using back gate to control the threshold voltage we can save not only significant standby power but even considerable dynamic power for domino circuits while preserving their speed. Comparing Vth control method with the conventional double gate scheme and a recently published successful work, showed the performance of this method. It is shown that the performance of this method will be better in higher temperatures. Simulations were done by HSPICE circuit simulator using DGFET PTM model.

Original languageEnglish (US)
Title of host publicationProceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009
Pages297-300
Number of pages4
DOIs
StatePublished - Jul 24 2009
Externally publishedYes
Event10th International Conference on ULtimate Integration of Silicon, ULIS 2009 - Aachen, Germany
Duration: Mar 18 2009Mar 20 2009

Publication series

NameProceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

Conference

Conference10th International Conference on ULtimate Integration of Silicon, ULIS 2009
CountryGermany
CityAachen
Period3/18/093/20/09

Fingerprint

Gates (transistor)
Networks (circuits)
Pulse time modulation
Threshold voltage
Simulators
Temperature

Keywords

  • Domino logic
  • Double-gate field effect transistors
  • V-control method

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Zeinolabedinzadeh, S., Ebrahimi, B., & Afzali-Kusha, A. (2009). Vth-control method in double gate field effect transistor domino circuits. In Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009 (pp. 297-300). [4897594] (Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009). https://doi.org/10.1109/ULIS.2009.4897594

Vth-control method in double gate field effect transistor domino circuits. / Zeinolabedinzadeh, Saeed; Ebrahimi, Behzad; Afzali-Kusha, Ali.

Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009. 2009. p. 297-300 4897594 (Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zeinolabedinzadeh, S, Ebrahimi, B & Afzali-Kusha, A 2009, Vth-control method in double gate field effect transistor domino circuits. in Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009., 4897594, Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009, pp. 297-300, 10th International Conference on ULtimate Integration of Silicon, ULIS 2009, Aachen, Germany, 3/18/09. https://doi.org/10.1109/ULIS.2009.4897594
Zeinolabedinzadeh S, Ebrahimi B, Afzali-Kusha A. Vth-control method in double gate field effect transistor domino circuits. In Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009. 2009. p. 297-300. 4897594. (Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009). https://doi.org/10.1109/ULIS.2009.4897594
Zeinolabedinzadeh, Saeed ; Ebrahimi, Behzad ; Afzali-Kusha, Ali. / Vth-control method in double gate field effect transistor domino circuits. Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009. 2009. pp. 297-300 (Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009).
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