Abstract

In this letter, we propose a CMOS-compatible selector prototype based on a Cu-SiO2 programmable metallization cell. With a porous e-beam evaporated SiO2 switching layer, the filament ruptures in less than a millisecond. The device exhibits diode-like I-V characteristics with a selectivity of more than 107. This volatile PMC can be changed to a bipolar resistive memory switch if the SiO2 switching layer is thermally doped with Cu. Threshold switching is a result of filament dissolution caused by Cu diffusion in SiO2.

Original languageEnglish (US)
Article number7429703
Pages (from-to)580-583
Number of pages4
JournalIEEE Electron Device Letters
Volume37
Issue number5
DOIs
StatePublished - May 1 2016

Fingerprint

Metallizing
Dissolution
Diodes
Switches
Data storage equipment

Keywords

  • crosspoint array
  • Cu diffusion
  • memory switching
  • PMC
  • selector device
  • SiO
  • threshold switching

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Volatile and Non-Volatile Switching in Cu-SiO2 Programmable Metallization Cells. / Chen, W.; Barnaby, Hugh; Kozicki, Michael.

In: IEEE Electron Device Letters, Vol. 37, No. 5, 7429703, 01.05.2016, p. 580-583.

Research output: Contribution to journalArticle

@article{6dc99597a9e842f18c04c221865f243d,
title = "Volatile and Non-Volatile Switching in Cu-SiO2 Programmable Metallization Cells",
abstract = "In this letter, we propose a CMOS-compatible selector prototype based on a Cu-SiO2 programmable metallization cell. With a porous e-beam evaporated SiO2 switching layer, the filament ruptures in less than a millisecond. The device exhibits diode-like I-V characteristics with a selectivity of more than 107. This volatile PMC can be changed to a bipolar resistive memory switch if the SiO2 switching layer is thermally doped with Cu. Threshold switching is a result of filament dissolution caused by Cu diffusion in SiO2.",
keywords = "crosspoint array, Cu diffusion, memory switching, PMC, selector device, SiO, threshold switching",
author = "W. Chen and Hugh Barnaby and Michael Kozicki",
year = "2016",
month = "5",
day = "1",
doi = "10.1109/LED.2016.2540361",
language = "English (US)",
volume = "37",
pages = "580--583",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",

}

TY - JOUR

T1 - Volatile and Non-Volatile Switching in Cu-SiO2 Programmable Metallization Cells

AU - Chen, W.

AU - Barnaby, Hugh

AU - Kozicki, Michael

PY - 2016/5/1

Y1 - 2016/5/1

N2 - In this letter, we propose a CMOS-compatible selector prototype based on a Cu-SiO2 programmable metallization cell. With a porous e-beam evaporated SiO2 switching layer, the filament ruptures in less than a millisecond. The device exhibits diode-like I-V characteristics with a selectivity of more than 107. This volatile PMC can be changed to a bipolar resistive memory switch if the SiO2 switching layer is thermally doped with Cu. Threshold switching is a result of filament dissolution caused by Cu diffusion in SiO2.

AB - In this letter, we propose a CMOS-compatible selector prototype based on a Cu-SiO2 programmable metallization cell. With a porous e-beam evaporated SiO2 switching layer, the filament ruptures in less than a millisecond. The device exhibits diode-like I-V characteristics with a selectivity of more than 107. This volatile PMC can be changed to a bipolar resistive memory switch if the SiO2 switching layer is thermally doped with Cu. Threshold switching is a result of filament dissolution caused by Cu diffusion in SiO2.

KW - crosspoint array

KW - Cu diffusion

KW - memory switching

KW - PMC

KW - selector device

KW - SiO

KW - threshold switching

UR - http://www.scopus.com/inward/record.url?scp=84964671230&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84964671230&partnerID=8YFLogxK

U2 - 10.1109/LED.2016.2540361

DO - 10.1109/LED.2016.2540361

M3 - Article

VL - 37

SP - 580

EP - 583

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 5

M1 - 7429703

ER -