Abstract
In this letter, we propose a CMOS-compatible selector prototype based on a Cu-SiO2 programmable metallization cell. With a porous e-beam evaporated SiO2 switching layer, the filament ruptures in less than a millisecond. The device exhibits diode-like I-V characteristics with a selectivity of more than 107. This volatile PMC can be changed to a bipolar resistive memory switch if the SiO2 switching layer is thermally doped with Cu. Threshold switching is a result of filament dissolution caused by Cu diffusion in SiO2.
Original language | English (US) |
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Article number | 7429703 |
Pages (from-to) | 580-583 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 37 |
Issue number | 5 |
DOIs | |
State | Published - May 2016 |
Keywords
- Cu diffusion
- PMC
- SiO
- crosspoint array
- memory switching
- selector device
- threshold switching
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering