Valence band discontinuity of the (0001) 2H-GaN/(111) 3C-SiC interface

S. W. King; R. F. Davis; C. Ronning; R. J. Nemanich

doi:10.1007/s11664-999-0145-4

Valence band discontinuity of the (0001) 2H-GaN/(111) 3C-SiC interface

S. W. King, R. F. Davis, C. Ronning, R. J. Nemanich

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

X-ray and UV photoelectron spectroscopies were used to measure the valence band discontinuity at the interface between (0001) 2H-GaN films and 3C-SiC (111) substrates. For GaN films grown by NH₃ gas source molecular beam epitaxy on (1×1) 3C-SiC on-axis surfaces, a type I band alignment was observed with a valence band discontinuity of 0.5±0.1 eV. A type I band alignment was also determined for GaN films grown on (3×3) 3C-SiC, but with a larger valence band discontinuity of 0.8±0.1 eV.

Original language	English (US)
Pages (from-to)	L34-L37
Journal	Journal of Electronic Materials
Volume	28
Issue number	12
DOIs	https://doi.org/10.1007/s11664-999-0145-4
State	Published - Dec 1999
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-999-0145-4

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title = "Valence band discontinuity of the (0001) 2H-GaN/(111) 3C-SiC interface",

abstract = "X-ray and UV photoelectron spectroscopies were used to measure the valence band discontinuity at the interface between (0001) 2H-GaN films and 3C-SiC (111) substrates. For GaN films grown by NH3 gas source molecular beam epitaxy on (1×1) 3C-SiC on-axis surfaces, a type I band alignment was observed with a valence band discontinuity of 0.5±0.1 eV. A type I band alignment was also determined for GaN films grown on (3×3) 3C-SiC, but with a larger valence band discontinuity of 0.8±0.1 eV.",

author = "King, {S. W.} and Davis, {R. F.} and C. Ronning and Nemanich, {R. J.}",

year = "1999",

month = dec,

doi = "10.1007/s11664-999-0145-4",

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T1 - Valence band discontinuity of the (0001) 2H-GaN/(111) 3C-SiC interface

AU - King, S. W.

AU - Davis, R. F.

AU - Ronning, C.

AU - Nemanich, R. J.

PY - 1999/12

Y1 - 1999/12

N2 - X-ray and UV photoelectron spectroscopies were used to measure the valence band discontinuity at the interface between (0001) 2H-GaN films and 3C-SiC (111) substrates. For GaN films grown by NH3 gas source molecular beam epitaxy on (1×1) 3C-SiC on-axis surfaces, a type I band alignment was observed with a valence band discontinuity of 0.5±0.1 eV. A type I band alignment was also determined for GaN films grown on (3×3) 3C-SiC, but with a larger valence band discontinuity of 0.8±0.1 eV.

AB - X-ray and UV photoelectron spectroscopies were used to measure the valence band discontinuity at the interface between (0001) 2H-GaN films and 3C-SiC (111) substrates. For GaN films grown by NH3 gas source molecular beam epitaxy on (1×1) 3C-SiC on-axis surfaces, a type I band alignment was observed with a valence band discontinuity of 0.5±0.1 eV. A type I band alignment was also determined for GaN films grown on (3×3) 3C-SiC, but with a larger valence band discontinuity of 0.8±0.1 eV.

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JF - Journal of Electronic Materials

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Valence band discontinuity of the (0001) 2H-GaN/(111) 3C-SiC interface

Abstract

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