Valence band discontinuity of the (0001) 2H-GaN/(111) 3C-SiC interface

S. W. King, R. F. Davis, C. Ronning, R. J. Nemanich

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

X-ray and UV photoelectron spectroscopies were used to measure the valence band discontinuity at the interface between (0001) 2H-GaN films and 3C-SiC (111) substrates. For GaN films grown by NH3 gas source molecular beam epitaxy on (1×1) 3C-SiC on-axis surfaces, a type I band alignment was observed with a valence band discontinuity of 0.5±0.1 eV. A type I band alignment was also determined for GaN films grown on (3×3) 3C-SiC, but with a larger valence band discontinuity of 0.8±0.1 eV.

Original languageEnglish (US)
Pages (from-to)L34-L37
JournalJournal of Electronic Materials
Volume28
Issue number12
DOIs
StatePublished - Dec 1999
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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