Vacuum thermal switch made of phase transition materials considering thin film and substrate effects

Yue Yang, Soumyadipta Basu, Liping Wang

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

In the present study, we theoretically demonstrate a vacuum thermal switch based on near-field thermal radiation between phase transition materials, i.e., vanadium dioxide (VO<inf>2</inf>), whose phase changes from insulator to metal at 341K. Strong coupling of surface phonon polaritons between two insulating VO<inf>2</inf> plates significantly enhances the near-field heat flux, which on the other hand is greatly reduced when the VO<inf>2</inf> emitter becomes metallic, resulting in strong thermal switching effect. Fluctuational electrodynamics incorporated with anisotropic wave propagation predicts more than 80% heat transfer reduction at sub-30-nm vacuum gaps and 50% at vacuum gap of 1μm. Furthermore, the penetration depth inside the uniaxial VO<inf>2</inf> insulator is studied at the vacuum gap of 50nm, suggesting the possible impact of reduced VO<inf>2</inf> thickness on the near-field thermal radiation with thin-film structures. By replacing the bulk VO<inf>2</inf> receiver with a thin film of several tens of nanometers, the switching effect is further improved over a broad range of vacuum gaps from 10nm to 1μm. Finally, the effect of SiO<inf>2</inf> substrate for the thin-film emitter or receiver is also considered to provide insights for future experimental demonstrations. By controlling heat flow with near-field radiative transport, the proposed vacuum thermal switch would find practical applications for energy dissipation in microelectronic devices and for the realization of thermal circuits.

Original languageEnglish (US)
Pages (from-to)69-77
Number of pages9
JournalJournal of Quantitative Spectroscopy and Radiative Transfer
Volume158
DOIs
StatePublished - Jun 1 2015

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switches
Phase transitions
Switches
Vacuum
Thin films
vacuum
near fields
Substrates
thin films
Heat radiation
thermal radiation
emitters
receivers
insulators
Heat transfer
Electrodynamics
Radiative transfer
dioxides
heat transmission
microelectronics

Keywords

  • Near-field radiation
  • Phase transition materials
  • Thermal switch
  • Thin film

ASJC Scopus subject areas

  • Spectroscopy
  • Atomic and Molecular Physics, and Optics
  • Radiation

Cite this

Vacuum thermal switch made of phase transition materials considering thin film and substrate effects. / Yang, Yue; Basu, Soumyadipta; Wang, Liping.

In: Journal of Quantitative Spectroscopy and Radiative Transfer, Vol. 158, 01.06.2015, p. 69-77.

Research output: Contribution to journalArticle

@article{af473cd08b1246d499d2d84d5e62e999,
title = "Vacuum thermal switch made of phase transition materials considering thin film and substrate effects",
abstract = "In the present study, we theoretically demonstrate a vacuum thermal switch based on near-field thermal radiation between phase transition materials, i.e., vanadium dioxide (VO2), whose phase changes from insulator to metal at 341K. Strong coupling of surface phonon polaritons between two insulating VO2 plates significantly enhances the near-field heat flux, which on the other hand is greatly reduced when the VO2 emitter becomes metallic, resulting in strong thermal switching effect. Fluctuational electrodynamics incorporated with anisotropic wave propagation predicts more than 80{\%} heat transfer reduction at sub-30-nm vacuum gaps and 50{\%} at vacuum gap of 1μm. Furthermore, the penetration depth inside the uniaxial VO2 insulator is studied at the vacuum gap of 50nm, suggesting the possible impact of reduced VO2 thickness on the near-field thermal radiation with thin-film structures. By replacing the bulk VO2 receiver with a thin film of several tens of nanometers, the switching effect is further improved over a broad range of vacuum gaps from 10nm to 1μm. Finally, the effect of SiO2 substrate for the thin-film emitter or receiver is also considered to provide insights for future experimental demonstrations. By controlling heat flow with near-field radiative transport, the proposed vacuum thermal switch would find practical applications for energy dissipation in microelectronic devices and for the realization of thermal circuits.",
keywords = "Near-field radiation, Phase transition materials, Thermal switch, Thin film",
author = "Yue Yang and Soumyadipta Basu and Liping Wang",
year = "2015",
month = "6",
day = "1",
doi = "10.1016/j.jqsrt.2014.12.002",
language = "English (US)",
volume = "158",
pages = "69--77",
journal = "Journal of Quantitative Spectroscopy and Radiative Transfer",
issn = "0022-4073",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Vacuum thermal switch made of phase transition materials considering thin film and substrate effects

AU - Yang, Yue

AU - Basu, Soumyadipta

AU - Wang, Liping

PY - 2015/6/1

Y1 - 2015/6/1

N2 - In the present study, we theoretically demonstrate a vacuum thermal switch based on near-field thermal radiation between phase transition materials, i.e., vanadium dioxide (VO2), whose phase changes from insulator to metal at 341K. Strong coupling of surface phonon polaritons between two insulating VO2 plates significantly enhances the near-field heat flux, which on the other hand is greatly reduced when the VO2 emitter becomes metallic, resulting in strong thermal switching effect. Fluctuational electrodynamics incorporated with anisotropic wave propagation predicts more than 80% heat transfer reduction at sub-30-nm vacuum gaps and 50% at vacuum gap of 1μm. Furthermore, the penetration depth inside the uniaxial VO2 insulator is studied at the vacuum gap of 50nm, suggesting the possible impact of reduced VO2 thickness on the near-field thermal radiation with thin-film structures. By replacing the bulk VO2 receiver with a thin film of several tens of nanometers, the switching effect is further improved over a broad range of vacuum gaps from 10nm to 1μm. Finally, the effect of SiO2 substrate for the thin-film emitter or receiver is also considered to provide insights for future experimental demonstrations. By controlling heat flow with near-field radiative transport, the proposed vacuum thermal switch would find practical applications for energy dissipation in microelectronic devices and for the realization of thermal circuits.

AB - In the present study, we theoretically demonstrate a vacuum thermal switch based on near-field thermal radiation between phase transition materials, i.e., vanadium dioxide (VO2), whose phase changes from insulator to metal at 341K. Strong coupling of surface phonon polaritons between two insulating VO2 plates significantly enhances the near-field heat flux, which on the other hand is greatly reduced when the VO2 emitter becomes metallic, resulting in strong thermal switching effect. Fluctuational electrodynamics incorporated with anisotropic wave propagation predicts more than 80% heat transfer reduction at sub-30-nm vacuum gaps and 50% at vacuum gap of 1μm. Furthermore, the penetration depth inside the uniaxial VO2 insulator is studied at the vacuum gap of 50nm, suggesting the possible impact of reduced VO2 thickness on the near-field thermal radiation with thin-film structures. By replacing the bulk VO2 receiver with a thin film of several tens of nanometers, the switching effect is further improved over a broad range of vacuum gaps from 10nm to 1μm. Finally, the effect of SiO2 substrate for the thin-film emitter or receiver is also considered to provide insights for future experimental demonstrations. By controlling heat flow with near-field radiative transport, the proposed vacuum thermal switch would find practical applications for energy dissipation in microelectronic devices and for the realization of thermal circuits.

KW - Near-field radiation

KW - Phase transition materials

KW - Thermal switch

KW - Thin film

UR - http://www.scopus.com/inward/record.url?scp=84939933070&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84939933070&partnerID=8YFLogxK

U2 - 10.1016/j.jqsrt.2014.12.002

DO - 10.1016/j.jqsrt.2014.12.002

M3 - Article

VL - 158

SP - 69

EP - 77

JO - Journal of Quantitative Spectroscopy and Radiative Transfer

JF - Journal of Quantitative Spectroscopy and Radiative Transfer

SN - 0022-4073

ER -