Unusual persistent photoconductivity in the InAs/AlSb quantum well

Yu G. Sadofyev, A. Ramamoorthy, J. P. Bird, Shane Johnson, Yong-Hang Zhang

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Unusual features of persistent photoconductivity are reported for the InAs/AlSb quantum-well (QW) structure with a backgate. A negative persistent photoconductivity made it possible to decrease the electron concentration by an order of magnitude from 6 x 1011 cm-2. This is the largest variation in the electron concentration for this effect. In addition to a pronounced negative persistent photoconductivity, the relaxation of the structural resistance was bistable under exposure of the structure to visible light. These phenomena are attributed to the effect of a thin Ge film deposited on the structure surface prior to photolithography. This film forms a region in the GaSb layer in which the holes are accumulated from the sequence of the Ge/GaSb/AlSb layers located above the QW. IR radiation initiates beats of Shubnikov-de Haas oscillations in the region of weak magnetic fields. These beats are believed to be caused by spin splitting in a zero magnetic field due to the asymmetry of a potential profile of the QW. This asymmetry is induced by prolonged illumination of the structure.

Original languageEnglish (US)
Pages (from-to)95-99
Number of pages5
JournalSemiconductors
Volume39
Issue number1
DOIs
StatePublished - Mar 4 2005

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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