Abstract
Unusual features of persistent photoconductivity are reported for the InAs/AlSb quantum-well (QW) structure with a backgate. A negative persistent photoconductivity made it possible to decrease the electron concentration by an order of magnitude from 6 x 1011 cm-2. This is the largest variation in the electron concentration for this effect. In addition to a pronounced negative persistent photoconductivity, the relaxation of the structural resistance was bistable under exposure of the structure to visible light. These phenomena are attributed to the effect of a thin Ge film deposited on the structure surface prior to photolithography. This film forms a region in the GaSb layer in which the holes are accumulated from the sequence of the Ge/GaSb/AlSb layers located above the QW. IR radiation initiates beats of Shubnikov-de Haas oscillations in the region of weak magnetic fields. These beats are believed to be caused by spin splitting in a zero magnetic field due to the asymmetry of a potential profile of the QW. This asymmetry is induced by prolonged illumination of the structure.
Original language | English (US) |
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Pages (from-to) | 95-99 |
Number of pages | 5 |
Journal | Semiconductors |
Volume | 39 |
Issue number | 1 |
DOIs | |
State | Published - 2005 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics